6 µm vertical cavity surface emitting laser based on IV-VI semiconductor compounds
Abstract
An optically-pumped lead salt-based vertical cavity surface emitting laser is presented. The laser structure grown by molecular-beam epitaxy consists of a Pb0.99Eu0.01Te/PbTe λ/2 microcavity with Pb0.99Eu0.01Te/Pb0.94Eu0.06Te Bragg mirrors. Stimulated emission was observed at 6073 nm below 25 K.
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History
Published in print: 17 February 2000
Published online: 14 March 2024
Inspec keywords
Keywords
- IV-VI semiconductor compounds
- vertical cavity surface emitting laser
- optically-pumped laser
- lead salt-based vertical cavity surface emitting laser
- laser structure
- molecular-beam epitaxy
- Pb0.99Eu0.01Te/PbTe microcavity
- Pb0.99Eu0.01Te/Pb0.94Eu0.06Te Bragg mirrors
- stimulated emission
- 6073 nm
- 25 K
- 6 mum
- Pb0.99Eu0.01Te-PbTe
- Pb0.99Eu0.01Te-Pb0.94Eu0.06Te
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