Electrical conductivity of II-VI and III-V semiconductors
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Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm2/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs. The residual carrier concentration measured in Hall effect experiments was found to be weakly modified in spite of the high defect concentration created by the ion bombardment. Ion-irradiated InGaAs appears to be specially adapted to fast photoconductive devices operating at optical communication wavelengths.
Fabrication of a ZnO gas sensor by electrophoretic deposition (EPD) is reported. EPD of submicron sized ZnO powder on an aluminium-chromium-iron alloy substrate was carried out in pure acetone. The porous thick film obtained was sintered at 1000°C in air. Native aluminium oxide layer grown on the alloy substrate insulated the sintered ZnO layer from the metal substrate. Operated at 250°C, the device showed a 20% conductance change in the presence of 10 ppm wood smoke.
Mg-doped GaN epitaxial layers were grown on (0001) sapphire by metal organic chemical vapour deposition and were characterised by room-temperature and variable-temperature Hall-effect measurements. The authors report an in-situ Mg acceptor activation procedure which occurs in a N2 ambient during the post-growth cool-down cycle. GaN:Mg films with a wide range of free-hole concentrations and electrical resistivities have been grown by varying the Mg precursor molar flow rate, the growth pressure, and the growth temperature. The highest 300 K free hole concentrations achieved were p ≃ 2.2 × 1018 cm–3 with mobilities μp ≃ 2.2 cm2/Vs.
Two-dimensional simulations are performed of low-temperature impurity breakdown in an n-type GaAs film connected to a capacitive and resistive external circuit under current controlled conditions. The results confirm that the transition between nearly-insulating and highly-conductive states, where a current filament is formed or decays in the sample, is synchronised with the charging and discharging of a parallel capacitor. Our simulations also indicate a mechanism for self-sustained relaxation oscillations.
High quality GaN has been grown by gas-source molecular beam epitaxy (MBE) using ammonia as the nitrogen source. A growth rate as high as 1 µm/h, which is an order of magnitude higher than previously reported for the growth of GaN by MBE, has been achieved. Strong reflection high-energy electron diffraction (RHEED) intensity oscillations have been observed during the growth, making in situ thickness monitor and control as thin as one monolayer possible. The undoped GaN demonstrated an unintentional n-type carrier density of 2 × 1017 cm-3 and an electron Hall mobility of 110 cm2/V.s, the best ever achieved by MBE. For Mg-doped p-type GaN films a hole density of 4 × 1017 cm-3 and hole mobility of 15 cm2/V.s were achieved without post-growth annealing. Low temperature photoluminescence of as-grown materials was dominated by band-edge emissions, indicative of high quality materials which are promising for applications to blue light emitters and high-temperature electronic devices.
Hydrogen concentrations up to ~1020 cm-3 in GaN and AlN and ~1019 cm-3 in InN are found to be incorporated during ECR plasma etching in Cl2/CH4/H2Ar at 170°C. Even very short duration (40 s) etch treatments produce hydrogen incorporation depths ≥0.2 µm ahead of the etch front, and may lead to electrical passivation effects within this region. Post-etch annealing at 450 – 500°C restores the initial conductivity.
The authors report the growth, by GSMBE and the semi-insulating behaviour of codoped InP:Ti,Be with high resistivities up to 4 × 107 Ω cm. Current-voltage measurements have been performed and good agreement has been found between experiment and theory using numerical simulation tools.
Lightly p-doped (3 × 1017 cm-3) GaN grown on GaAs substrates by metal organic molecular beam epitaxy (MOMBE) shows deactivation of the residual acceptors on exposure to a microwave (2.45 GHz) hydrogen plasma at 250°C. Subsequent annealing to 350°C produces further dopant passivation, while higher temperatures (450°C) restore the initial conductivity. These results suggest that hydrogen carrier gases should be avoided during vapour phase growth of III-V nitrides.
Residual doping of InP layers grown at low temperature by atomic layer molecular beam epitaxy (ALMBE) has been reduced down to ̃1016cm-3 by control of phosphorus pulses, and then, p-type InP layers doped with Be have been grown at substrate temperatures of 305–340°C. Epilayers show low compensation and mobilities that are comparable to bulk p-type InP.
The perpendicular transport properties of a p-GaAs/δ-doped superlattice/n+-GaAs structure were studied at 300 and 77 K. An interesting S-shaped negative differential resistance (NDR), resulting mainly from avalanche multiplications within the superlattice region, was observed at 300 K. A different multistate NDR phenomenon and an interesting hysteresis behaviour were found at 77 K. The multistate NDR is attributed to a sequential subavalanche multiplication process occurring within superlattice periods; holes created by avalanche multiplications play an important role in the transport properties. The hysteresis behaviour at 77 K seems to be caused by the heavily accumulated holes, which cannot react synchronously with the applied electric field.
Chemical beam epitaxy (CBE) growth of very high purity InP with Hall mobility as high as 238 000 cm2/Vs at 77 K and with a peak value of 311 000 cm2/Vs at 50 K and residual impurity concentration of 6×1013 cm−3 at 77 K is reported for an InP layer grown at 500°C. These values are the highest mobility values ever reported for InP grown by any molecular beam method.
A peculiar photoconductive property with a positive temperature coefficient in a semi-insulting GaAs photodiode is found in the room temperature range. Also, the low-light-level photoconductivity is higher than usual. We suggest that an ionised-impurity scattering mechanism is dominant. Theoretical responsivity is compared with the measured value.
During the last two decades the physical properties of III-V compound semiconductors were extensively investigated. Electron transport calculations, with only few exceptions, made use of pure Monte Carlo methods. In this paper, we present a probabilistic approach in which the material is described in terms of a sparse scattering rate matrix. This one needs to be calculated only once by a Monte Carlo technique. Fluctuations are absent from our results. All devices using the same material recur to this matrix in terms of scattering. Results are for GaAs at 300 K using a 3-valley model. They agree well with those obtained by standard Monte Carlo, both for bulk material and when the effects of the carrier distribution on the field are included. In this last case, we have chosen the well known results of the n+in+ structure to compare with ours. Given the absence of fluctuations, new details are presented. For bulk material, a second weakly negative differential mobility zone corresponding to Γ→X transfer is predicted in the stationary ν(E) characteristic. For field steps in time, velocity overshoot followed by undershoot was also found, corresponding to readjustments between the populations in the X and L valleys. For the n+in+ structure, results for low voltages, which are generally beyond the reach of pure Monte Carlo methods, are presented. Extension of the method to the transport of bidimensional electron gases is straightforward.
Longitudinal electric fields ≥0.5kV/cm applied to a thin off-axis n-GaAs sample give rise to transverse electric fields across the thin sample dimension. This arises from the anisotropic transport properties of L point electrons, and may provide a means of determining intervalley scattering times and other transport related parameters for GaAs.
A novel optoelectronic autocorrelation technique for measuring picosecond lifetimes in semiconductors is described. The technique is based on the nonlinearity of the photovoltage dependence on the optical excitation level. Numerical simulation as well as experimental results for low-temperature epitaxial InGaAs samples are presented.
An unproved method for modelling degeneracy in a Monte-Carlo simulation of electron transport in GaAs is proposed. It has been shown that the displacement of the distribution of electrons in k-space should be taken into account, when the degeneracy effects are implemented by using the energies of electrons.
An electro-optical sampling technique for high-field conductivity measurement was proposed and electron drift velocity in δ-doped GaAs samples was measured.
The effect of n-type dopant species on the compensating behaviour of oxygen implants has been studied using Hall effect and C/V profiling techniques. Stronger compensation is retained if silicon rather than selenium is used to form the n-type layer. The compensation has been separated into damage related and oxygen atom related mechanisms, both of which are shown to be n-type dopant sensitive. The dopant sensitivity of the damage related compensation is tentatively described by assuming that localised regions of stoichiometric imbalance are introduced by the oxygen implantation, which promotes activation on the arsenic site. However, the reason for the dopant sensitivity of the oxygen atom related mechanism remains unclear.
It has been shown for the first time that the concentration of ionised impurities in n-type InP can be reduced by incorporation of atomic hydrogen. The temperature dependence of the electron mobility indicates that donors as well as acceptors are passivated, although the hydrogen is more strongly bound when passivating acceptors.
In this letter we report on the growth of high quality InP by metal organic molecular beam epitaxy (MOMBE). InP layers were grown exhibiting Hall mobilities of up to 132000 cm2/Vs at T = 77 K with a background free electron concentration of around 2 × 1014cm−3. These good electrical results were obtained along with a high optical quality.
