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An Nd:YVO4 laser with intracavity frequency doubling exhibits two mode-locked states with different repetition rates. The two states may coexist, interact and transform from one to the other as the cavity length is varied. The transition from one dominant state to the other takes place continuously. The proposed effect is evidence of a bifurcation phenomenon.
A 1342 nm Nd:YVO4 microchip laser is reported, Q-switched with a dilute nitride GaInNAs/GaAs saturable absorber mirror. The laser produced optical pulses as short as 204 ps with 2.3 MHz repetition rate and 24 mW average output power. In comparison to conventional InP-based saturable absorber mirrors, the advantage of the proposed approach is the availability of excellent Bragg mirror materials that enable high reflectivity and more flexibility in designing the non-linear parameters owing to the use of lattice matched GaInNAs/GaAs quantum wells.
In this paper we describe a promising approach to increase the output energy of a laser system emitting infrared radiation in the spectral range 6.78μm based on direct difference frequency generation in non-oxide nonlinear crystals using single-mode Nd:YAG laser and tunable Cr:forsterite laser, which was developed for the muonic-hydrogen experiment. The investigated system is based on lithium thioindate (LiInS2) crystal cut for type II difference frequency generation. The pulses of the Nd:YAG laser (1,064 μm) are combined with the pulses at ~ 1.262 μm of the Cr:forsterite laser through a dichroic mirror and sent to the nonlinear crystals in different optical geometries. The generated radiation reaches an output energy more than 90 μJ in a single pass optical geometry, has 10 ns long pulses at 50 Hz frequency repetition rate and is tunable in the range 6695 - 6870 nm. These results prove the suitability of such an approach for building the laser system for the muonic-hydrogen experiment.
A thermally advanced, Nd:YVO4 amplifier at 1064 nm based on an 800 µm-thick Nd:YVO4 gain layer bonded to a silicon carbide (SiC) prism is demonstrated. The amplifier was tested in the ‘master oscillator–power amplifier’ configuration, where both the seed source and the amplifier were operated in a quasi-continuous-wave regime. The hetero-composite Nd:YVO4/SiC gain element pumped by an 808 nm laser diode bar stack amplified the seed power in a range of 1–55 W with a gain of 4–2.6, respectively. The temperature profile of the gain element measured by a thermal camera indicated the maximum observed temperature excursion at pump saturation intensity to be only 27°C.
Presented is the power-scaling characteristics of microchip vertical external-cavity surface-emitting lasers which include grating apertures for mode selection. Multi-Watt multi-lateral-mode emission at a wavelength of 1060 nm is obtained with sub-linear increase in maximum output power with aperture-size. It is also shown that the polarisation is only set by the grating lines for high-order modes which interact sufficiently with the grating.
A simple scheme for directly stabilising the repetition-rate difference of two laser frequency combs is reported. For the intended application in dual-comb spectroscopy, the RMS phase error achieved for the locking was 0.1 rad, corresponding to a repetition-rate uncertainty of 0.16 Hz and a timing error of 18 as in a measurement time of 100 ms.
The authors review their recent studies on various nanophotonic devices including all-optical switches, optical memories, electro-optic modulators, photo-detectors and lasers, all of which are based on photonic crystal (PhC) nanocavities. The strong light confinement achieved in PhC nanocavities has enabled these devices with ultrasmall footprint and ultralow power/energy consumption. These characteristics are ideally suited for constructing dense photonic network on chip, which will overcome the limitation of future CMOS chips in terms of high-speed operation with less energy consumption and heat generation.
A novel scheme based on optoelectronic down conversion is proposed and demonstrated to obtain an ultrahigh spectral purity and tuneable optical beat note in the GHz and millimetre wave range. The resulting beat note linewidth is measured to be better than 1 Hz over 100 GHz leading to a relative stability lower than 10-11. This approach is scalable to the THz domain. (3 pages)
A gain-switched photonic band crystal laser that delivers the most powerful picosecond pulses to date is showing promise for direct material processing applications.
Pulses as short as 65 fs at an average power of 22 mW were achieved from a passively modelocked laser at 1039 nm based on a Yb-doped diffusion-bonded KY(WO4)2 crystal. To the authors' best knowledge, this is the shortest pulse duration for diode-pumped modelocked Yb-doped monoclinic double tungstate oscillators.
Through laser ablation process, a diaphragm with mesa structure is fabricated successfully in silicon wafer with Nd:YAG laser machining system. Then the silicon diaphragm is used to make optical fiber Fabry-Perot pressure sensor. The pressure sensing experiment showed the sensor had a good linear response with sensitivity 10.6 nm/kPa at the range 40-240 kPa.
By employing a double-pass absorption design and pressure clamping technique, a diode end-pumped continuous-wave Yb:Y2O3 ceramic disc laser at room temperature has been developed. An optimum output power of 10.5 W near 1078 nm was obtained at a pump power of 35 W. The laser threshold was 7 W and the corresponding slope-efficiency was 37.5%. The red-shift phenomena under different pump power levels and output couplings have been investigated. The still evolving Yb:Y2O3 ceramic is a super-excellent media for high brightness laser applications.
A green laser source was assembled consisting of a multi-section distributed feedback laser and a periodically poled lithium niobate crystal in single-pass configuration. Butt-coupling between the tilted output facet of the laser and the second harmonic generation waveguide crystal was applied allowing the assembly of the green emitter being without further optical elements. An output power of 35 mW and a single frequency operation with an SMSR of 50 dB were achieved for the green emitter developed.
When calling for compact green laser sources, the green upconversion emission of IR pumped erbium-doped fluoride glass waveguides opens up a technologically and economically superior alternative to complex and costly frequency doubling techniques. Therefore, fluoride glass planar waveguides were fabricated with thicknesses down to 29 µm and a scattering loss of 0.1–0.2 dB/cm.
A terahertz time-domain spectroscopy system based on a femtosecond Yb:KGW laser, a narrow-gap semiconductor surface emitter, and a photoconductive detector made from an Si-doped GaBiAs epitaxial layer is demonstrated. The spectral bandwidth of the system is larger than 4 THz, and its dynamical range exceeds 60 dB.
A single growth 1545 nm laser integrated with a distributed slot reflector is presented. The reflector consists of five slots etched into a ridge waveguide and provides a power reflectivity of 5%. The distributed reflector allows integration of the laser with a detector with a responsivity of up to 1.76 A/W.
Pulses as short as 97 fs for an average power of 70 mW were obtained directly from a SESAM modelocked diode pumped laser based on the tetragonal NaY(WO4)2, a locally disordered double tungstate, doped with Yb. An extracavity prism pair helped to reduce the pulse duration to 90 fs with a corresponding time-bandwidth product of 0.321.
A lasing mode in a single-cell photonic crystal cavity is characterised by measuring spatially resolved polarisation. A polarisation state is measured at each small element of area (50×50 µm) in the lasing mode. The observed set of polarisation compares well with the computed electric field direction of the quadrupole mode. This polarisation study demonstrates a significant advance to unambiguously identify a lasing mode in a photonic crystal cavity.
A report is presented on the realisation of high brightness broad area lasers with emission wavelengths around 2 µm. A simple fabrication scheme based on a tilted contact geometry is demonstrated to be an easy and effective way to control the far-field characteristics of the presented laser devices. By varying the angle of the contact stripe against the laser facets normal the waveguiding properties of the gain guided cavities are externally controlled to achieve far-field angles as low as 2.1° at full width half maximum. This fact is ascribed to a systematic reduction of the number of oscillating lateral modes.
A new double-pass wideband Er-Raman fibre amplifier is proposed, pumped by a Raman laser oscillating through a medium consisting of Er-doped fibre and dispersion compensating fibre in series.
