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Radiation effects (semiconductor technology)

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  • Electrical and electronic engineering [3]
  • Components, electron devices and materials [3]
  • Semiconductor materials and technology [3]
  • Semiconductor technology [3]
  • Radiation effects (semiconductor technology) [3]
  • Physics [2]
  • Condensed matter: structure, thermal and mechanical properties [2]
  • Structure of liquids and solids; crystallography [2]
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  • 2003 [3]

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They come from outer space
Author(s): C. Evans-Pughe
Source: IEE Review, Volume 49, Issue 8, 2003 , p. 30 - 33
Type: Article
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Today, a system using hundreds of chips could suffer several soft error failures a month, and the problem is set to increase. Why is this and what are the implications?

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Radiation-induced changes in thin film structures
Author(s): K. Arshak, O. Korostynska
Source: IEE Proceedings - Circuits, Devices and Systems, Volume 150, Issue 4, 2003 , p. 361 - 366
Type: Article
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Optical, electrical and structural properties of metal oxide thin films of tellurium dioxide (TeO2), indium oxide (In2O3) and silicon monoxide (SiO) and their mixtures were studied in terms of gamma radiation influence. These films were prepared using the thermal vacuum evaporation technique. 60Co and 137Cs sources were used to expose the samples to γ-radiation. It was found that the optical band gap values decreased with increasing radiation dose. The radiation induced changes in the electrical properties of these films. Devices with resistor-type structures and p-n junctions were studied. Irradiation resulted in the degradation of the device performance, e.g. current–voltage characteristics of these devices experienced significant alterations. It was observed that values of current were increased with increasing radiation dose. The response of these devices to radiation was found to be composition-dependent. Radiation-induced changes in the structure and surface morphology of In2O3/SiO films were examined by scanning electron microscopy and X-ray diffraction. The irradiation of these thin films with a dose of 8160 μSv led to a change in their phase from amorphous to partially crystallised.

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Electrical properties of 1.55 µm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime
Author(s): J. Mangeney, L. Joulaud, J. Decobert, J.-M. Lourtioz, J.L. Perrossier, S. Cabaret, P. Crozat
Source: Electronics Letters, Volume 39, Issue 8, April 2003, p. 681 - 682
Type: Article
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Carrier lifetimes as short as 270 fs with carrier mobility of 200 cm2/V/s and good performances in terms of layer resistivity have been obtained from ion-irradiated InGaAs. The residual carrier concentration measured in Hall effect experiments was found to be weakly modified in spite of the high defect concentration created by the ion bombardment. Ion-irradiated InGaAs appears to be specially adapted to fast photoconductive devices operating at optical communication wavelengths.

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