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To increase storage capacity and I/O bandwidth, modern solid-state drives embed multiple NAND packages that consist of one or multiple dies in a parallel architecture. Each die can process NAND read/write/erase operations independently. A dynamic die binding method for write requests that is intended to exploit this parallel processing capability is proposed. This scheme stripes data to idle dies first, and unlike existing dynamic binding schemes, when idle dies are lacking it selects dies with the lowest accumulated write loads, thereby achieving wear levelling by ensuring long-term write load balancing. Thus, it can prevent situations in which some dies are worn out more quickly than others. A performance evaluation demonstrates that our approach offers slightly better performance compared with an existing dynamic binding scheme and completely resolves the problem of imbalanced write loads.
A gain cell embedded dynamic random access memory (eDRAM) with a noble charge injection technique is presented. The gain memory cell is composed of dual-threshold two logic N-type MOSs implemented in a generic triple-well CMOS process. A negative-voltage toggle on the parasitic junction diode formed between the pocket p-well and the cell data node couples up the cell storage voltages. It results in a much enhanced retention time in a compact bit area. Moreover, the technique exhibits much strong immunity from the write disturbance. Measured results at 85°C from a 110 nm 64 kbit prototype eDRAM incorporating the proposed technique demonstrate 69% enhanced retention time and 86% smaller write disturbance loss compared with the conventional one.
With the advent of multiple cores on a single chip, it is common for the systems to have multi-level caches. Multiple levels of cache reduce the pressure on the memory bandwidth by allowing applications to store their frequently accessed data in them. The levels of cache nearer to the core filter the locality in the application access, which can result in high miss rates at farther levels. This piece of study revolves around one question: are all levels of cache needed by all applications during all phases of their execution? The study observes the effect of 2-level and 3-level cache hierarchies on the performance of different applications. On the basis of this study, this study proposes an application aware cache management policy called ‘SkipCache’, which allows an application to choose a 2-level or 3-level cache hierarchy during run-time. SkipCache dynamically tracks the applications at shared last-level cache (LLC) to identify the applications that do not obtain advantage by using the LLC. Such applications can completely skip the LLC so that other co-scheduled cache friendly applications can efficiently use it. Evaluation of SkipCache in a 4-core chip multi-processor with multi-programmed workloads shows significant performance improvement. SkipCache is orthogonal to other cache management techniques and can be used along with other optimisation techniques to improve the system performance.
Currently flash memory is widely used for data storage of mobile communication and automobile electronics. In this study the control program of multiple-execution has been designed to suppress the components and level of electromagnetic interference (EMI) noise generated during the data writing/reading of flash memory. The method designed by us can reduce the EMI noise levels of writing and reading operations by 4.39 dB and 2.91 dB respectively, while reducing the EMI noise components by 58.3% and 54.5% respectively, such that the noise interference by flash memory can be effectively reduced when it is used for various electronic devices. Especially for the automobile electronic systems, where the reduction of EMI noise interference can assure driving safety, and the reception sensitivity can be enhanced by suppressing the interference of RF module resulted from platform noise.
Quantum dot gate field-effect transistor (QDGFET) generates three states in their transfer characteristics. A successful model can explain the generation of third state in the transfer characteristics of the QDGFET. The innovative circuit design using QDGFET can be used to design different ternary logic. This Letter discusses the design of ternary logic static random access memory using QDGFET.
The presence of voltage controlled negative differential resistance was observed in conduction characteristics recorded at room temperature for 300 nm thick spin-coated films of graphene oxide (GO) sandwiched between indium tin oxide (ITO) substrates and top electrodes of sputtered gold (Au) film. The GO crystallites were found from the X-ray diffraction studies to have an average size in the order of 7.24 nm and to be preferentially oriented along (001) plane. Raman spectroscopy suggested that the material consisted of multilayer stacks with the defects being located at the edges with an average distance of 1.04 nm apart. UV visible spectroscopy studies suggested that the band gap of the material was 4.3 eV, corresponding to direct transitions. The two-terminal ITO/GO/Au devices exhibited memristor characteristics with scan-rate dependent hysteresis, threshold voltage and On/Off ratios. A value of >104 was obtained for On/Off ratio at a scan rate of 400 mVs−1 and 4.2 V.
In this paper, a new voltage mirror circuit by using carbon nanotubes (CNTs) technology is presented. This circuit is specifically proposed for the application of duplicating multiple-valued and fuzzy dynamic random access memories. The given structure prevents any voltage drop for the capacitor inside the memory cell. As a result, any fanout circuit can be driven. The new structure can be utilised for different multiple-valued logic systems without a change. The unique characteristics of carbon nanotube field effect transistor (CNFET) technology are exploited in this paper to meet the desired design goals. It demonstrates the potentials of CNFET technology in a realistic very large-scale integration application. The proposed design is highly tolerant to D CNT variation and it is also immune to misaligned CNTs. Simulation results demonstrate that it provides sufficient driving capability with reasonable accuracy.
Programmable logic devices permit a new way to practice yield improvement: redundancy at configuration time. By doing so, the authors avoid the overheads of traditional redundancy: explicit spares, replacement logic and on-chip non-volatile memory. This presentation describes a method for avoiding defects that also does not require a unique place-and-route for each fielded chip. Formal analysis and experimental results show the feasibility of the method for standard, unmodified field-programmable gate arrays.
An efficient replica bitline (RBL) technique for reducing the variation of sense amplifier enable (SAE) timing is proposed. Both RBLs and four-fold replica cells compared with the conventional RBL technique are utilised to favour the desired operations. Simulation results show that the standard deviation of SAE can be suppressed by 44.25% and the cycle time is also reduced by ∼30% at a 0.8 V supply voltage in TSMC 65 nm technology. Additionally, the area of the proposed scheme is nearly the same as that of the conventional RBL scheme.
The probabilistic switching of resistive random access memory (RRAM) can be utilised to implement physical unclonable functions (PUFs). By setting the operation condition at a switching probability of 50%, devices in a RRAM array are randomly settled into state ‘0’ or ‘1’ after programming. The RRAM switching probability provides a natural source of randomness that could be exploited in the PUF to generate security primitives. The feasibility and characteristics of the proposed PUF are analysed by simulation based on measured RRAM switching probability. With good scalability and stochastic mechanisms, RRAM may prove to be a promising candidate for security applications.
A low-cost memory data scheduling method based on two N/2-depth single-port memories is proposed for reconfigurable fast Fourier transform (FFT) bit-reversed data reordering tasks. To make single-port memories have the equivalent ability to read and write data simultaneously, two types of read and write address generation methods are proposed. Based on the proposed data scheduling method, the bit-reversal circuits are designed for continuous data reordering tasks. The proposed bit-reversal design is implemented for a maximum 8 k flexible length FFT processor. Compared with the other two conventional methods, the proposed bit-reversal method can reduce memory area cost by 53.8 and 46.1%, respectively.
Multiple way tables in which items can be placed on several buckets are used in many computing applications. Some examples are cache memories and multiple hash tables structures. In most cases, the items are stored in electronic memories that are prone to soft errors that can corrupt the stored items. To avoid data corruption, memories can be protected with a parity bit or with an error correction code. It is shown that most single bit errors can be detected in multiple way tables without adding a parity bit. This can be done by placing the items in a predetermined order in the multiple ways of the table.
Cache has been introduced into many Graphics processing units (GPUs) to decrease the frequency of data transfer between high-performance computing units and low-speed long-latency external memory. The traditional index mapping scheme designed originally for CPU cache exploits only the spatial locality in address space. The access to graphics data always has region locality on the frame buffer: there are high spatial localities in both X and Y directions. It may generate more conflict misses on some limited cache lines, which eventually results in high cache miss ratio and a performance drop. Traditional CPU cache cannot be used directly in GPU. We propose a new conflict-avoiding GPU cache called XY - type cache with a new index mapping scheme, whose cache line indices are computed from both X and Y coordinates of pixels and the cache index distribution is consistent with the region locality on the frame buffer. Our evaluation results show that the proposed XY -type GPU cache can reduce cache miss ratio by 88% at most via scattering the cache accesses to all lines evenly, and can completely avoid the bad effect caused by frame resolution. Since the cache miss ratio in direct-mapped or 2-way set-associative structure is approximate to or even lower than that in fully-associative structure which is the best case in terms of lowering cache line conflicts, XY -type GPU cache can be designed with lower complexity and lower consumption power.