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Radiation effects (semiconductor technology)

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  • Electrical and electronic engineering [3]
  • Components, electron devices and materials [3]
  • Semiconductor materials and technology [3]
  • Semiconductor technology [3]
  • Radiation effects (semiconductor technology) [3]
  • Semiconductor junctions and interfaces [2]
  • General topics, engineering mathematics and materials science [1]
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  • 2011 [3]

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High open-circuit voltage betavoltaic cell based on GaN pin homojunction
Author(s): Z.J. Cheng, H.S. San, Z.H. Feng, B. Liu, X.Y. Chen
Source: Electronics Letters, Volume 47, Issue 12, June 2011, p. 720 - 722
Type: Article
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A high open-circuit voltage betavoltaic cell based on a GaN pin homojunction is demonstrated. A process of doping compensation has been developed to achieve high resistance i-GaN film for betavoltaics. Under 0.5 mCi 63Ni source irradiation, the open-circuit voltage of the fabricated GaN pin homojunction betavoltaic cell was measured as high as 1.65 V. A fill factor of 54% and a 2.7% lower bound on the power conversion efficiency were obtained. The results suggest GaN is a highly potential candidate for the long-life betavoltaic cell.

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Electron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors
Author(s): Qi Zhang, Junjie Qi, Yunhua Huang, Xin Li, Yue Zhang
Source: Micro & Nano Letters, Volume 6, Issue 6, 2011 , p. 437 - 440
Type: Article
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The authors investigated the performance of ZnO nanowire-based metal–semiconductor field effect transistors (MESFETs) by focusing electron beam on the Schottky gate. The MESFET was fabricated by employing Tantalum as drain and source and by using Schottky barrier at tungsten–ZnO interface as the gate. As to IDS against VGS curves, once the gate was illuminated with electron beam radiation, crests with a redshift as VDS increased and a p-type semiconductor transistor behaviour were observed. At the critical points, the value of VDS−VGS revealed a linear behaviour with the increasing VDS. The authors attributed these results to the gain enhanced by electron beam radiation and carrier-trapping process, while the shift may be associated with the image-force lowing effect.

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Alpha-particle-induced effects in partially depleted silicon on insulator device: with and without body contact
Author(s): S.S. Rathod, A.K. Saxena, S. Dasgupta
Source: IET Circuits, Devices & Systems, Volume 5, Issue 1, 2011 , p. 52 - 58
Type: Article
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With the continuous downscaling of CMOS technologies, reliability has become one of the major bottlenecks in the evolution of next generation systems. The radiation-induced soft errors have become one of the most important and challenging failure mechanisms in the modern semi-conductor devices. The authors present an in-depth analysis of alpha-particle-induced effects in deep submicron partially depleted silicon on insulator (PD-SOI) device. Device with body contact as well as device without body contact is analysed. The process and device simulations are done with the latest models. Electrical parameter extraction under different energies of an alpha particle is carried out.

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