Piezoelectric and ferroelectric devices
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- http://iet.metastore.ingenta.com/content/subject/b7310,http://iet.metastore.ingenta.com/content/subject/b7310g,http://iet.metastore.ingenta.com/content/subject/b7100,http://iet.metastore.ingenta.com/content/subject/b7130,http://iet.metastore.ingenta.com/content/subject/b7200,http://iet.metastore.ingenta.com/content/subject/b7230,http://iet.metastore.ingenta.com/content/subject/b7320,http://iet.metastore.ingenta.com/content/subject/b2860c,http://iet.metastore.ingenta.com/content/subject/b7320r,http://iet.metastore.ingenta.com/content/subject/a,http://iet.metastore.ingenta.com/content/subject/a0000,http://iet.metastore.ingenta.com/content/subject/a0600,http://iet.metastore.ingenta.com/content/subject/a0630,http://iet.metastore.ingenta.com/content/subject/a0630m,http://iet.metastore.ingenta.com/content/subject/a0670,http://iet.metastore.ingenta.com/content/subject/a0670d,http://iet.metastore.ingenta.com/content/subject/a4000,http://iet.metastore.ingenta.com/content/subject/a4300,http://iet.metastore.ingenta.com/content/subject/a4385,http://iet.metastore.ingenta.com/content/subject/a4385g,http://iet.metastore.ingenta.com/content/subject/a6000,http://iet.metastore.ingenta.com/content/subject/a6800,http://iet.metastore.ingenta.com/content/subject/a6825,http://iet.metastore.ingenta.com/content/subject/a6855,http://iet.metastore.ingenta.com/content/subject/a7000,http://iet.metastore.ingenta.com/content/subject/a7700,http://iet.metastore.ingenta.com/content/subject/a7755,http://iet.metastore.ingenta.com/content/subject/a7760,http://iet.metastore.ingenta.com/content/subject/a8000,http://iet.metastore.ingenta.com/content/subject/a8100,http://iet.metastore.ingenta.com/content/subject/a8115,http://iet.metastore.ingenta.com/content/subject/a8115c,http://iet.metastore.ingenta.com/content/subject/b0000,http://iet.metastore.ingenta.com/content/subject/b0500,http://iet.metastore.ingenta.com/content/subject/b0520,http://iet.metastore.ingenta.com/content/subject/b0520f,http://iet.metastore.ingenta.com/content/subject/b1300,http://iet.metastore.ingenta.com/content/subject/b1350,http://iet.metastore.ingenta.com/content/subject/b2500,http://iet.metastore.ingenta.com/content/subject/b2520,http://iet.metastore.ingenta.com/content/subject/b2520d,http://iet.metastore.ingenta.com/content/subject/b2810,http://iet.metastore.ingenta.com/content/subject/b2810f,http://iet.metastore.ingenta.com/content/subject/b7320g
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This work is aimed at the study of a potential possibilities of microwave Bulk Acoustic Wave resonators for temperature measurements. The resonators under study had nonstandard high overtone BAW resonator configuration: a thin piezoelectric film ZnO with electrodes was deposited onto the surface of the substrate made of the (100) oriented YAG plate with the thickness 480... 980 μm. The new technical solution was that resonator was acoustically isolated and protected from the ambient mechanical influence. For this purpose the bottom side of the plate and the top electrode of the resonator structure were isolated from ambient by a nine-layer Bragg Ti-W quarter-wave length thin film reflectors. Due to the isolation it can become no sensitive even to liquids getting on the surfaces of the resonator. Total thickness of all deposited layers was less than 12μm. The resonator aperture was less than 600μm.
Summary form only given. The aim of the present study was to evaluate the potential of thin film SAW devices as strain sensors. ZnO (zinc oxide) was identified as the most suitable piezoelectric thin film material, on the basis of its relatively high SAW coupling factor and low acoustic losses. Other factors, including the processing techniques and temperatures required for film growth, were also considered in making this decision. ZnO thin films were deposited by RF magnetron sputtering onto (100) oriented Si wafers. The use of intermediate layers of SiO2 and Al were also investigated for temperature compensation and for enhancement of the coupling factor KSAW respectively. The influence of the substrate type and processing parameters on the film structure, microstructure and electrical resistivity will be reported. The design and performance of prototype 1-port SAW resonators based on the ZnO thin films will also be described. (1 page)
Summary form only given. Doubly-rotated cut quartz resonators excited on the main C-mode and the thermosensitive B-mode simultaneously appear to be the most promising way for essential improvement of the basic performance of MCXOs and temperature sensors. This article elucidates the physical origins of the phenomena and searches for an effective method of designing double-mode resonators for improved operation. Careful exploration of the frequency spectrum of the fundamental mode and the 3d overtone SC-cut crystals while ambient temperature changes, allows one to identify spurious mode interactions with the B-mode. Furthermore, the dependence of the interaction intensity on the “energy trapping” in the crystal plate has been revealed and explained. The C-mode activity showed no noticeable fluctuations within the temperature range of -40 to +70 °C, while the B-mode activity deviated within 30 per cent for the fundamental mode and within 10 per cent for the 3d overtone crystals.
