Piezoelectric and ferroelectric devices
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Optimization of single phase unidirectional transducers (SPUDT) is main problem in the design of low-loss SAW filters. Here we deal with distributed acoustic reflection transducers, each elementary cell (one wavelength) of that includes not more than one "hot" electrode and/or one, two, three or four grounded electrodes. For assembling the input and output SPUDTs we use more than ten different cell types that are considered as elementary SAW sources and SAW reflectors with different magnitudes and phases, depending on widths and positions of electrodes.
Summary form only given. Passive wireless surface acoustic wave (SAW) sensors are used to measure temperature, pressure and torque, identify the railway vehicle at high speed, etc. with a resolution of about 1%. Most frequently, the information bearer in such sensors is a time delay of the SAW estimated at the receiver. The basic principle utilized in such a technique combines advantages of the precise piezoelectric sensors, high SAW sensitivity to the environment, passive (without a power supplied) operation, and wireless communication between the sensor element and the interrogator. In this report, we address a statistical analysis of the estimate errors of the time delay (phase difference) between two reflectors of the passive wireless surface acoustic wave (SAW) sensor. The estimation is provided in a sense of the maximum likelihood function at coherent receiver in presence of Gaussian noise. Assuming the Gauss shape interrogating radio frequency (RF) pulse, we bring an important proof that the first time derivatives of its amplitude and phase do not affect the sensor phase (and phase difference) at the receiver. Rigorous and approximate relations for the mean error and mean square error (MSE) along with the probability for the estimate error to exceed a threshold are derived and studied in detail. The plots to evaluate the errors in a wide range of signal-to-noise ratios (SNRs) and thresholds are given. Practical findings for designers of the SAW sensor systems exploiting differential measurement are also pointed out.
This work is aimed at the study of a potential possibilities of microwave Bulk Acoustic Wave resonators for temperature measurements. The resonators under study had nonstandard high overtone BAW resonator configuration: a thin piezoelectric film ZnO with electrodes was deposited onto the surface of the substrate made of the (100) oriented YAG plate with the thickness 480... 980 μm. The new technical solution was that resonator was acoustically isolated and protected from the ambient mechanical influence. For this purpose the bottom side of the plate and the top electrode of the resonator structure were isolated from ambient by a nine-layer Bragg Ti-W quarter-wave length thin film reflectors. Due to the isolation it can become no sensitive even to liquids getting on the surfaces of the resonator. Total thickness of all deposited layers was less than 12μm. The resonator aperture was less than 600μm.
The general approach for calculation and analyzing frequency and field impedance dependencies of BAW composite resonator structures with parametrically exited layers is developed in this paper. The BAW resonator consisting of two piezoelectric layers was considered. The first dielectric layer was the electric input transducer of the structure and was connected with the source of signal frequency. The second one was a piezoelectric parametric layer placed in alternating uniform electric field of frequency. Different mechanisms of non-linearity in parametric piezoelectric layers are analyzed. The acoustic wave propagation in parametric layers is accompanied by the electric field wave and electron density wave of frequency. Parametrically exited composite resonator structures may serve as a source of electromagnetic oscillations.
Summary form only given. The aim of the present study was to evaluate the potential of thin film SAW devices as strain sensors. ZnO (zinc oxide) was identified as the most suitable piezoelectric thin film material, on the basis of its relatively high SAW coupling factor and low acoustic losses. Other factors, including the processing techniques and temperatures required for film growth, were also considered in making this decision. ZnO thin films were deposited by RF magnetron sputtering onto (100) oriented Si wafers. The use of intermediate layers of SiO2 and Al were also investigated for temperature compensation and for enhancement of the coupling factor KSAW respectively. The influence of the substrate type and processing parameters on the film structure, microstructure and electrical resistivity will be reported. The design and performance of prototype 1-port SAW resonators based on the ZnO thin films will also be described. (1 page)
Summary form only given. This talk will review the subject of nanotechnology and explore how new materials can be used to integrate sensing and actuation functions onto semiconductor chips, with the ultimate objective of permitting nanoscale fabrication and information storage. Ferroelectric materials offer a wide range of properties which can be used in such microsystems and nanotechnology, particularly the pyroelectric effect for thermal infrared detection and imaging and the piezoelectric effect for sensors (sound, acceleration, etc.), and for actuators (motors, pumps). The potential for ferroelectric thin and thick films to contribute to these fields will be discussed, and problems reviewed, especially from the aspect of materials and process integration. Specific examples of the factors critical to the growth and behaviour of the materials will be given and novel processing for the fabrication of thin and thick films of ferroelectrics discussed. (1 page)
Summary form only given. This paper will continue the description of the use of ferroelectric detectors in uncooled thermal imaging from Pt. I which concentrated on the present generic range of hybrid detector arrays. The new research centred around an integrated technology for the ferroelectric arrays will be described. In this technology, the ferroelectric detector material is directly deposited onto the silicon readout IC (ROIC) by either sol-gel processing or sputtering. To thermally isolate the elements from the ROIC, the ferroelectric is deposited onto a sacrificial layer and patterned so that, on etching, a thin microbridge of the ferroelectric and its electrodes is constructed standing on two narrow legs above the silicon surface. The technology should lead to full wafer scale production with no ceramic preparation, reticulation or bonding giving substantial cost reductions and improved performance in comparison with the hybrid arrays. Topics being addressed are the ferroelectric films, and the bridge micro-engineering and materials. The present hybrid array programme description will be concluded with a video tape of scenes from the application of the 100×100 array to fire-fighting in the helmet mounted CairnsIRIS system, and of the 256×128 array to night driving in simple trials. (1 page)
Summary form only given. Doubly-rotated cut quartz resonators excited on the main C-mode and the thermosensitive B-mode simultaneously appear to be the most promising way for essential improvement of the basic performance of MCXOs and temperature sensors. This article elucidates the physical origins of the phenomena and searches for an effective method of designing double-mode resonators for improved operation. Careful exploration of the frequency spectrum of the fundamental mode and the 3d overtone SC-cut crystals while ambient temperature changes, allows one to identify spurious mode interactions with the B-mode. Furthermore, the dependence of the interaction intensity on the “energy trapping” in the crystal plate has been revealed and explained. The C-mode activity showed no noticeable fluctuations within the temperature range of -40 to +70 °C, while the B-mode activity deviated within 30 per cent for the fundamental mode and within 10 per cent for the 3d overtone crystals.
Silicon micromachined sensors and actuators that incorporate piezoelectric materials are considered. Widespread application has been restricted by the properties of the materials available. The prospects for micromachined piezoelectric devices have improved since it became possible to deposit PbZrxTi1-xO3 layers over large areas with goad uniformity and reproducibility. Considerable progress has been made in developing process technologies for integrating PbZrxTi1-xO3 thin films layers with surface and bulk micromachined structures. As incorporation of these materials in silicon microstructures becomes established it will be possible to consider the integration of bipolar and CMOS electronics with the sensors and actuators. Material and process integration techniques developed to incorporate thin film PbZrxTi1-xO3 onto bulk micromachined structures are described. The design of a triaxial accelerometer and the processing steps required are outlined. (1 page)
