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An InAs quantum-dot external-cavity passively modelocked laser with an operation wavelength of 1.27 µm is demonstrated, based on a two-section quantum-dot superluminescent diode with bending ridge waveguide and a 96% output coupler. Stable modelocking with an average power up to 60 mW was obtained at a repetition frequency of 2.4 GHz. This performance corresponds to a 25 pJ pulse energy obtained directly from the oscillator, which represents a 55-fold increase in pulse energy when compared to the current state-of-the-art for semiconductor lasers. At a repetition frequency of 1.14 GHz, picosecond optical pulses with 1.5 W peak power are also demonstrated, representing the highest peak power achieved from an external-cavity laser at the 1.3 µm waveband, without the use of any pulse compression or optical amplification.
A method for fabricating a Si-based packaging platform with a reflector and electrode-guided interconnections is proposed for the packaging component of a high-power light-emitting diode (LED) module. The reflector is fabricated by Ni/Au/Ag-electroplating which is patterned by SU-8 2075 and 4620 negative photo-resistors and the electrical interconnections are formed by Cu/Au-electroplating in the same body. The heat generated by the LED chip is dissipated directly to the Si body through the large metal-plated platform. This method is suitable for high-efficiency and low-cost LED packaging.
A fast and accurate current programming method with a current unity-gain amplifier which provides high gain and driving capability has been designed. Experimental results show that the maximum error of the programming current in pixels is less than 0.22 least significant bit using the proposed current driving method and the lowest grey-level current, 6.7 nA, can be successfully programmed within 19 µs. The power consumption of the proposed current driving method with a channel is 10.5 µW. This performance is good enough to apply to a 12-inch-wide extended graphics array resolution format active matrix organic light emitting diode display with 8-bit greyscale.
Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots (QDs) with engineered height are realised. A tilted and tapered active region is used to reduce the effective reflectivity from the facets. A 3 dB emission bandwidth up to 140 nm centred at 1100 nm is achieved at a continuous-wave drive-current of 600 mA. It is shown that varying the height of the dots from one layer of dots to another within the active region considerably broadens the emission spectrum of the QD-SLDs compared to those made of similar layers of inhomogeneous QDs.
Transparent materials could lead to a new generation of smart objects. Some electronic devices can be made transparent when they are not used. The Novaled organic light emitting diodes proposed for home lighting in designs produced by Ingo Maurer are see-through when switched off.
A new low-voltage detecting method for a multichannel LED back lighting unit is proposed. The proposed method detects the lowest voltage drops among the multichannel LED strings with a reduced number of devices, and it provides feedback voltage to control the stages of the boost converter for minimising the power consumption in the LED driving circuit.
The relationship between the thermal and luminance distributions in high-power lateral GaN/InGaN light-emitting diodes (LEDs) is demonstrated. By using a three-dimensional electrical circuit model and experimentally measured thermal and luminance images of the LED chips, it is shown that thermal and luminance distributions have close correlation and that uniform current density is essential to improve the thermal and luminance properties of LED chips.
The first broadband high-power quantum dot superluminsecent diodes (QD-SLDs) to have been intermixed to have a significant blue-shift in their operating wavelength have been demonstrated by researchers at the University of Sheffield in the UK. This result could open the door to high bandwidth active devices comprising regions of different wavelengths that could meet the demands of, for example, optical imaging of the eye and other skin tissue.
A 1.2 µm high power and broadband quantum dot superluminescent diode has been successfully realised by post-growth annealing process on a p-doped InAs/InGaAs dot in well structure. The device exhibits a high output power of above 190 mW with ∼80 nm bandwidth.
A new code of optical code division multiple access (OCDMA) based on spectral amplitude coding (SAC) is described and analysed. The coding technique is called random diagonal (RD) code. One of the important properties of this code is that the cross-correlation at data segment is always zero, which means that phase intensity induced noise (PIIN) is reduced. From the construction of RD code sequence, the authors can see that the RD code is constructed using code segment and data segment. Using this code property, RD code is implemented using coherent source (multi-laser) and incoherent source (light emitting diode) for the code segment and data segment, respectively. RD code using two multi-sources (incoherent and coherent) can be considered as an effective way for maximising the capacity while minimising the cost of SAC–OCDMA. It is shown that the system using this new code matrices not only suppresses PIIN, but also allows a larger number of active users compared with other codes.
The characteristics of the reverse leakage current of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) are examined with various n-type GaN doping concentrations and interpreted by using a tunnelling current model. Changing the doping concentration of the n-type GaN influences the tunnelling probability of electrons into the conduction band and thus the reverse leakage current. Reducing the doping concentration of the top 150 nm portion of the n-type GaN layer by half decreases the tunnelling probability, resulting in decrease of the reverse leakage current by 80% at −10 V without deterioration of any forward electrical properties of LEDs.
The paper analyses the practice to realize the sustainable development of ice landscape in Harbin. The specific measures include ice landscape layout, the use of energy saving light source, ice recovery. The study methods are investigation and illumination tests around the ice lanterns on-site. All of Large-scale ice landscapes are built near the Songhua River which across the city so that we can get the free and pure ice from the river quickly. LED technique was applied to ice landscape lighting to reduce the power consumption in 2008. LED light isn't fragile and contains no toxic substances. More and more people are interested in ice landscape, and they become the internal impetus to the ice landscape development. The study also finds out some problems. The collection and reuse of ice lack feasible measures, and about 120,000 cubic meters ice aren't recycled every year. The higher price of LED source has affected its popularity, and the excessive lighting of ice landscape can lead to light pollution. Some factors decide the ice landscape sustainable development such as ice recovery, energy saving, environmental protection and related cultivation of professionals.
