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A real-time external sensing and compensation method for active matrix organic light emitting diode displays is proposed. The proposed method senses and compensates for the variation of electrical characteristics of poly-Si thin-film transistors (TFTs) during display time. Experimental results show that the proposed method successfully senses the electrical characteristics of TFTs in real-time and compensates for the non-uniform emission current error.
Different types of driver circuits for the temperature-invariant brightness of light emitting diodes and the RF performance of Schottky barrier diodes, p–i–n diodes and p–n junction diodes are presented. The sensitivities of the proposed driver circuits with ambient temperature, bias voltage and other component variations are presented. Novel techniques are proposed and demonstrated to compensate the performance variation of diode-based circuits due to the temperature sensitivity of the components of driver circuits. The proposed driver circuits eliminate the requirement of conventional temperature compensation techniques with temperature sensors. The driver circuits respond directly to the junction temperature of the diodes itself; thus, there will be no compensation error due to the temperature gradient or self-heating of the diodes. This technique is very simple, accurate and easy to implement.
An electrode pattern design methodology that improves the current uniformity in mesa-structured GaN/InGaN blue light-emitting diodes (LEDs) is investigated. Comparisons between an LED with a new electrode pattern adopting the proposed methodology and an LED with a commercially used electrode are made in view of both current and luminance distributions. Simulations as well as experimental results show that the proposed simple design methodology is very effective to spread current more uniformly in the active layer.
A resonant cavity light emitting diode combined with a submicron oxide current aperture, to pump individual InGaAs/GaAs quantum dots electrically, has been designed and fabricated. Pulsed correlation measurements demonstrated true single photon emission with g2(0)=0 at a rate of 1 GHz.
The characteristics of broadband superluminescent diodes (SLDs) are presented. The longitudinal bandgap modulated InGaAs/GaAs multiple quantum wells of broadband SLDs are grown by selective area metal organic vapour phase epitaxy (MOVPE) growth. The centre wavelength was 1060 nm. The 3 dB bandwidth was 130 nm and the 10 dB bandwidth was 174 nm. The output power was 0.3 mW.
Integrating circuits into organic light emitting diode displays requires fabrication of polycrystalline silicon (poly-Si) based thin-film transistors (TFTs) on glass substrates. A novel ITO/AlNdN/Al contact process has been developed for the pixel step. In metallisation, ITO/Al interconnection is metallurgically undesirable. An AlNdN layer is selected for a pixel material and ITO/AlNdN/Al structure is applied to the pixel line. Reported is the feasibility for the multilevel ITO/AlNdN/Al contact, which can make the poly-Si TFTs competitive in the market.
New generation of high-intensity aluminium gallium arsenide (AlGaAs) and aluminium indium gallium phosphide (AlInGaP) light-emitting diodes (LEDs) which have permitted the replacement of incandescent-based traffic lights with LED-based traffic lights, unfolds the potential of implementing visible-light communication (VLC) system on outdoor environment. The feasibility of outdoor VLC system is undoubtedly questionable because of the significant ambient-light noise caused by daylight. Existing performance studies related to this system have not taken into account the effect of ambient-light noise which varies largely from day time to night time. The authors propose an analytical daylight noise model based on a modified Blackbody radiation model to capture the effect of ambient-light noise and conduct an in-depth study on the impact of daylight on the system performance. The proposed daylight noise model allows us to perform analytical analysis which produces relatively accurate results with less complexity, as compared to the existing time-consuming simulation. The authors also introduce a new receiver structure employing the selective combining technique to significantly reduce the effect of background noise. From numerical analysis, the authors show that the new receiver structure is able to achieve a signal-to-noise ratio (SNR) improvement of approximately 5 dB and establish a stable communication link at any time of the day.
This presentation offers a solution for a low-cost, point-of-care tests that provide lab quality results on the spot. The merging of lab-on-a-chip technology and organic semiconductors can provide better, faster, cheaper diagnosis and treatment, hence reducing burden on clinician time. (19 pages)
This presentation discusses some key characteristics of polymers and several polymer-based electronic devices such as polymer light-emitting diodes, photovoltaic diodes, organic solar cells, field-effect transistor, and electrophoretic display. (31 pages)
GaN optoelectronic devices based on nanowires offer potential advantages that merit further investigation for applications in solid-state lighting and displays. Reported is the operation GaN nanowire, light-emitting diodes that are based on a uniform and scalable nanowire process. For light-emitting diodes consisting of approximately 300 nanowire pn homojunctions, operating in parallel, the electroluminescence intensity was found to grow superlinearly with current. For individual nanowire light-emitting diodes the forward and reverse leakage current was<1 pA. The low leakage current of individual light-emitting nanowire diodes indicates that surface effects do not dominate the electrical behaviour of these LEDs.
