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Light emitting diodes

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Room temperature InPSb/InAs and InPSb/InAs/InAsSb mid-infrared emitting diodes grown by MOVPE
Author(s): A. Stein, D. Püttjer, A. Behres, K. Heime
Source: IEE Proceedings - Optoelectronics, Volume 145, Issue 5, 1998 , p. 257 - 260
Type: Article
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Strained InAsSb heterostructures are important materials for a variety of new III-V based mid-infrared emitters. In the study InP0.69Sb0.31/InAs light-emitting diodes (LEDs) employing an InAs/InAs0.94Sb0.06 multiquantum-well (MQW) active region have been investigated. They were characterised using electro-optical techniques and X-ray diffractometry. The authors have measured the temperature dependence of electroluminescence (EL): at low temperatures, the EL-intensity of the MQW diodes is higher than that of a simple PIN InPSb/InAs/InPSb structure. For both devices, room temperature EL could be resolved (emission wavelength of 3.3 µm, FWHM of 70 meV) which is related to InAs near-bandgap transitions. InAsP/InAsSb MQWs were grown to achieve higher antimony contents in the wells. The heterostructures were strain-balanced and enabled an antimony incorporation of 24% with, at the same time, high structural quality. In the photoluminescence (PL) spectra of InAs0.95P0.05/InAs0.86Sb0.14 MQWs strong features were observed around 4.2 µm due to atmospheric CO2 absorption.

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