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The use of a rare earth gettering technique for the growth of very pure InAs(Sb) epitaxial layers of high quantum efficiency and its application for the fabrication of powerful 4.6 μm LEDs operating at room temperature is reported. By introducing the rare earth element Gd or Yb into the liquid phase during LPE growth, it is found that the carrier concentration of InAs(Sb) layers can be effectively reduced to ∼6×1015 cm−3, and that the photoluminescence (PL) intensity of such layers can be considerably increased by between 10 and 100 times compared with untreated material. This behaviour is attributed to the gettering of residual impurities and the corresponding reduction of non-radiative recombination centres in the presence of the rare earth. This technique is used to purify the InAs0.89Sb0.11 ternary material in the active region of an InAs0.55Sb0.15P0.30/InAs0.89Sb0.11/InAs0.55Sb0.15P0.30 symmetrical double heterostructure LED. A pulsed optical output power in excess of 1 mW at room temperature is measured, making these emitters suitable for use in portable instruments for the environmental monitoring of carbon monoxide at 4.6 μm.
High-power light-emitting diodes operating at 4.6 µm with potential for use in an optical carbon monoxide sensor have been fabricated by liquid phase epitaxy (LPE) with a pulsed output power in excess of 1 mW at room temperature. The InAs0.89Sb0.11 in the LED active region was purified using rare earth ion gettering of the growth solution during epitaxy.
Light emitting diodes (LEDs) and lasers operating in the 2 to 3 µm spectral region at room temperature are been demonstrated. The devices were fabricated from InxGa1-xAs/InAsyP1-y double heterostructures grown on n-type InP (100) substrates by molecular beam epitaxy. A strain relaxed buffer layer which incorporates composition reversals was used to reduce the threading dislocation density and to accommodate the large lattice mismatch (up to 2.7%) between the InP substrate and the device active region. Efficient electroluminescence emission at wavelengths between 2 and 3 µm was obtained from the LEDs at room temperature, while diode lasers exhibited coherent emission in the range 2–2.6 µm at temperatures up to 130 K. For one of the LEDs a characteristic absorption was readily observed at 2.7 µm in the diode electroluminescence emission spectrum, corresponding to strong water vapour absorption in the atmosphere. These devices could easily form the key component of an infrared gas sensor for water vapour detection and monitoring at 2.7 µm in a variety of different applications.
The quaternary alloy InAs1-x-ySbxPy, lattice-matched to InAs, is a promising material for the production of infrared light sources for the detection of pollutant/nuisance gases in the 2–5 µm region of the spectrum. The authors report on the growth of InAs0.36Sb0.20P0.44 by liquid phase epitaxy (LPE) onto InAs substrates. The material exhibits good luminescence efficiency and has excellent optical characteristics, making it suitable for use in optoelectronic devices. Surface-emitting LEDs were fabricated and efficient room temperature infrared emission at 2.5 µm was obtained from homojunction p-i-n diodes. These sources can be effectively used as the basis of an optical sensor for the environmental monitoring of HF gas at 2.5 µm in various applications.
InAs and InAsSbP are promising materials for the fabrication of mid-infrared light sources for use in solid state gas sensors. In this paper, we report work on n-i-p and p-i-n. InAs light emitting diode structures grown using liquid phase epitaxy (LPE) on InAs substrates. These homoepitaxial diodes were compared to double heterojunction InAsSbP/InAs LEDs with InAs active regions. Room temperature emission at wavelengths between 3.3 µm and 3.7 µm (dependent on structure) was readily obtained. Electroluminescence spectra of these devices are presented, and a comparison with photoluminescence spectra of the epitaxial material is used to determine the region of the diode giving rise to the light emission. At room temperature, in the double heterojunction LEDs, the light emission was observed to originate from the InAs active region. However, in the homoepitaxial LEDs, the light was generated both in the undoped and p+ regions of the device, depending on the precise structure.
InAs0.91Sb0.09 light emitting diodes (LEDs) were grown on p-type GaSb substrates using liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 4.2 µm and can be used to fabricate infrared carbon dioxide (CO2) gas sensors for the cost effective detection and monitoring of CO2 gas in various applications.
In0.97Ga0.03As light emitting diodes were grown on p-type InAs substrates by liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 3.3 µm and can be used to fabricate infrared methane gas sensors for the cost-effective detection and monitoring of methane gas in various applications.
