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The design and operation of a near infra-red resonant cavity light-emitting diode operating at 1.7 microns with a 16 nm linewidth is described. The structure is based on a wafer-bonded combination of InGaAs/InAlAs/InP quantum well emitter and an AlAs/GaAs distributed Bragg reflector. Detailed temperature characteristics over a range from 80 to 373 K are presented. The temperature dependence of the main cavity mode emission wavelength is shown to be 0.15 nm/K. The intensity is found to increase with temperature from 80 to 325 K and thereafter decrease. There is a 20 degree range in which the intensity is constant within approximately 5%. A model is suggested for this behaviour.
A lattice-matched p+/n+-InGaAs tunnel junction for use in the realisation of low-resistivity p-side contacts for InP-based optoelectronic devices is investigated. Test structures with heavily doped n+/p+ (~1020 cm-3) InGaAs layers grown by solid-source molecular beam epitaxy show ohmic behaviour and very low specific contact resistivities of ~3 × 10-6 Ωcm2.
The first demonstration of resonant cavity enhancement of optical emission from an InAs/GaAs quantum dot light emitting diode is reported. For emission around 1300 nm, efficiency enhancements of greater than 10 for low current injection and greater than 3 for higher current injection for light coupled into a multimode optical fibre are observed.
Strained InAsSb heterostructures are important materials for a variety of new III-V based mid-infrared emitters. In the study InP0.69Sb0.31/InAs light-emitting diodes (LEDs) employing an InAs/InAs0.94Sb0.06 multiquantum-well (MQW) active region have been investigated. They were characterised using electro-optical techniques and X-ray diffractometry. The authors have measured the temperature dependence of electroluminescence (EL): at low temperatures, the EL-intensity of the MQW diodes is higher than that of a simple PIN InPSb/InAs/InPSb structure. For both devices, room temperature EL could be resolved (emission wavelength of 3.3 µm, FWHM of 70 meV) which is related to InAs near-bandgap transitions. InAsP/InAsSb MQWs were grown to achieve higher antimony contents in the wells. The heterostructures were strain-balanced and enabled an antimony incorporation of 24% with, at the same time, high structural quality. In the photoluminescence (PL) spectra of InAs0.95P0.05/InAs0.86Sb0.14 MQWs strong features were observed around 4.2 µm due to atmospheric CO2 absorption.
Room-temperature LEDs, fabricated from LPE grown InAsSb(P)/InAs heterostructures, are characterised with respect to methane (3.3 µm), carbon dioxide (4.3 µm) and nitric oxide (5.3 µm) optical detection. Output power as high as 50 µW (I = 1 A, 128 µs) and FWHM as small as 0.6 µm have been obtained for the first reported InAsSb LED emitting at 5.5 µm.
This paper investigates the differences of wafer-bonded n-(Al0.7Ga0.3)0.5In0.5P/n-GaP, n-Ga0.5In0.5P/n-GaP and n-GaP/n-GaP heterointerfaces. The current–voltage characteristics have been demonstrated to be a result of different wafer cleaning methods. Bonded interfaces were also characterised by scanning electron microscopy and transmission electron microscopy. In addition, an (AlxGa1-x)0.5In0.5P light-emitting diode (LED) was fabricated by wafer direct bonding technique. The luminous intensity of the wafer-bonded (AlxGa1-x)0.5In0.5P/GaP LED is about two times brighter than the conventional device with an absorbing GaAs substrate.
AlGaInP DH, DH + DBR and MQW LEDs were fabricated and their luminescence properties were compared. It was found that AlGaInP MQW LEDs are brighter than DH and DH + DBR LEDs, particularly under low current injection. For MQW LEDs, the EL intensity will increase as the number of wells increases. Furthermore, the output intensity is also a function of the barrier layer thickness lB. As lB increases, the EL intensity will become larger. Reliability tests under DC and pulse operation were measured and it was found that the AlGaInP MQW LEDs used in this study are more reliable than the DH + DBR LED. Under pulse operation it was found that, as the number of wells increases, the amount of decay will become smaller.
The authors report a 600 nm range resonant cavity light emitting diode, grown by solid source molecular beam epitaxy. The device consisted of a 1λ thick AlGaInP active region surrounded by AlGaAs-based distributed Bragg reflectors. The current aperture of the device was formed by lateral selective wet thermal oxidation. A record continuous-wave output power of 1.1 mW, with 5.3 nm linewidth and a peak external quantum efficiency of 2.0%, was attained from the device with an 80 µm exit window. The spectrum remained almost unaffected by temperature variations.
A novel principle is proposed for integration of III-V light sources with CMOS VLSI circuits. The flipped III-V chip is connected to the CMOS chip by capacitive coupling instead of by a conductive connection method. Energy is transmitted through a dielectric connection layer using a high frequency carrier signal. The proposed system requires no post-processing of the CMOS circuits and offers potentially high reworkability and good coupling efficiency.
Molecular beam epitaxy (MBE) has been used to grow strained multiple quantum well InAs0.9Sb0.1 light-emitting diodes (LEDs) lattice matched on InAs substrates. The LEDs exhibit room-temperature infrared emission at 3.4 µm and can be used to fabricate low cost sensors for the detection or monitoring of any C-H containing compound. The compositional dependence of InAsSb on the As2 over Sb4 flux ratio has been examined and could be fitted using an empirical expression based on the As2 and Sb4 fluxes and on their relative sticking coefficients. Electroluminescence has been measured at room temperature and at liquid nitrogen temperature. The low temperature spectra peak at 3.4 µm (InAs) and at 3.8 µm (InAs0.9Sb0.1). At room temperature only InAs emission is observed. The external efficiencies at room temperature were 1.0 × 10-4, and the maximum output power was 27.5 µW under pulsed operation at 740 mA (30 kHz, 0.6% duty cycle).
Optical, magneto-optical and time-resolved spectroscopies indicate that arsenic-rich InAs/InAs1-x Sbx strained-layer superlattices have a pronounced type-II offset, with electrons confined to the alloy layers, encouragingly high radiative efficiencies at wavelengths well into the midinfrared, and exhibit suppression of Auger recombination. LEDs operating at 3–10 µm now give room temperature powers of 30 µW and are probably at present limited by inadequate electron confinement.
Amorphous silicon (a-Si:H) layers are used to improve the injection current density J and threshold voltage Vth of porous-silicon light-emitting diodes (PS-LEDs). A PS-LED with n-i-n-p-n a-Si:H layers is shown to have a substantially (> 6 orders of magnitude) higher J than that of the PS-LED without any a-Si:H layers. In addition, a lower Vth of 4.2 V and a higher brightness B of 20.5 cd/m2 at J = 600 mA/cm2 are achieved as compared to other PS-LEDs with n-i-p-n a-Si:H layers.
A tapered geometry high power superluminescent light emitting diode (TSLED) is described. Since it is found that an absorbing region by itself is inadequate for sufficiently reducing feedback, a simple but very effective etched deflector has been incorporated into the TSLED design, enabling output powers exceeding 500 mW to be obtained.
Spontaneous emission engineering and the incorporation of microresonators are becoming a rather standard engineering tool to achieve high efficiency optical devices. We review the state of the art in this field and point to emerging applications in LED microcavities, and possible future quantum well laser microcavities.
Blue and green electroluminescence from GaN/InGaN pn junctions is reported. The layer sequences were grown by molecular beam epitaxy on sapphire substrates. Room temperature electroluminescence was recorded at 470 nm (blue) and 513 nm (green) wavelengths.
The aging of II-VI blue-green LEDs which contain a low density of as-grown extended defects has been examined under room temperature continuous-wave operation at a constant current density of 100 A/cm2. The authors observe a slow decrease in the emission intensity and a monotonic increase in the operating voltage during the device lifetime for more than 350 h.
An optoelectronic integrated circuit (OEIC) consisting of a highly focusing AlGaAs microlensed LED and a double heterojunction bipolar transistor (DHBT) has been fabricated. A 30 µm radius microlens was used to focus IR radiation into a beam-spot smaller than 3 µm. A microlensed LED focused its output light within a full width at half maximum (FWHM) of 17° in the far field pattern. An integrated microlensed LED radiated ~35 mW of maximum light output with a driving current of 120 mA, and its driving DHBT with a 10 × 15 µm2 emitter showed a DC current gain of β = 20.
Optical bistability was observed in the current-light output (I-L) characteristic of an InAlAs/InP type II multi-quantum well (MQW) diode for the first time. With bistability, light output suddenly increases at 70 mA when the current increases; it suddenly decreases at 30 mA when the current decreases. We found that the bistability of the I-L characteristic corresponds exactly to the bistability of the current-voltage (I-V) characteristic of the InAlAs/InP MQW diode.
The authors have fabricated organic electroluminescent (EL) diodes with a microcavity structure designed to have a resonance wavelength of 500 nm, by using a metal reflector and various dielectric reflectors. The emission intensity (spectral power density) is enhanced by a factor of 5 compared to that of an EL diode without a cavity, and narrow spectral width of 8 nm was achieved in blue green emission.
InAs0.91Sb0.09 light emitting diodes (LEDs) were grown on p-type GaSb substrates using liquid phase epitaxy (LPE). These devices exhibit efficient infrared emission at 4.2 µm and can be used to fabricate infrared carbon dioxide (CO2) gas sensors for the cost effective detection and monitoring of CO2 gas in various applications.
