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InAlGaP microcavitv LEDs on Ge substrates emitting at 640 nm with compressively strained MQW active layers have been fabricated. The external quantum efficiency for a non-encapsulated MCLED was 5.2% at 4 mA and the device emitted 1.9 mW at 20 mA and nearly 8 mW optical output power at an injection current of 100 mA.
InP-based microcavity light emitting diodes (MCLEDs) operating at a wavelength of 1300 nm are reported. An output power of 3.8 mW and total external quantum efficiency of 9% are reported. These values are to the best of the authors' knowledge the highest ever reported for an InP-based MCLED.
The work described here was aimed towards high efficiency light emitting diodes (LEDs), thereby compromising on directionality and narrow spectrum. At present our efforts have yielded devices which have an external quantum efficiency (QE) of over 22%. This is believed to be a record QE for planar LEDs. This result relies on both careful design and material growth. For the design we developed a simulation tool which proves useful in selecting interesting structures and interpreting experimental results. The theoretical analysis includes the guided modes, reabsorption of light by the active material and subsequent photon recycling. The material is grown with MOVPE, which yields high quality material as well as allowing excellent control over layer thickness and composition. In the first part we highlight the main characteristics of the theoretical model and deal with some key issues in the design of high efficiency microcavity LEDs (MCLEDs). In part two the main experimental results are discussed. (6 pages)
High efficiency substrate emitting microcavity InGaAs/(Al)GaAs 3 QW LEDs are reported. The use of regrowth for cavity resonance tuning and its effect on device performance, are demonstrated. The best results obtained include external quantum efficiencies of 16%. At 5 mA, 1 mW of optical power is delivered with an intensity of 280 µW/sr.
High efficiency substrate emitting microcavity InGaAs/(Al)GaAs single QW LEDs are reported. The influence of the reflectivity of the bottom GaAs/AlAs DBR and cavity dimensions have been investigated. The best results obtained include peak external quantum efficiencies of 6.2%, and an intensity of 210 µW/steradian at 10 mA.
Side-emitting LEDs are proposed showing a wide optical spectrum. The LEDs were fabricated using a special growth technique called shadow masked growth (SMG). The width of the window in the shadow mask was gradually changed along the LED stripe direction and therefore resulted in a continuous variation of the layer thickness. The combination with a quantum well active region results in a continuous variation in bandgap and emission wavelength. These different spectra add up at one side of the LED offering a broad spectrum. By decreasing the width of the window, starting from 100 μm, GaAs/AIGaAs GRINSCH SQW LEDs have been realised with spectral widths up to 63 nm and very small spectral ripple.
The successful realisation of a fully electrically interconnected optical and electronic device using the epitaxial lift-off technique is reported. The OEIC consists of a high output power InGaAs/GaAs/AlGaAs strained QW LED and a GaAS MESFET driver. The surface emitting LED shows an external quantum efficiency of 1.7%. The output/input ratio of the LED-FET combination was 54 μWV−1 sr−1.
We report, for the first time, the successful integration of GaAs LEDs on Si using the epitaxial lift-off technique. LEDs were processed after the transfer and could be aligned to features on the Si substrate. LED contacts were defined on both sides of the thin layer. Operation characteristics similar to those of LEDs grown on GaAs were observed. This realisation holds out interesting prospects in the fabrication of quasi-monolithic opto-electronic integrated circuits.
