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Semiconductor doping

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P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance
Author(s): P.E. Thompson, G.G. Jernigan, S.-Y. Park, R. Yu, R. Anisha, P.R. Berger, D. Pawlik, R. Krom, S.L. Rommel
Source: Electronics Letters, Volume 45, Issue 14, July 2009, p. 759 - 761
Type: Article
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Robust Si resonant interband tunnel diodes have been designed and tested that demonstrate as-grown negative differential resistance at room temperature with peak-to-valley current ratios (PVCR) up to 2.5 and peak current densities in the order of 1 kA/cm2. The as-grown Si p+in+ structures were synthesised using solid source molecular beam epitaxy, incorporating B and P δ-doped layers. Both structures have shown thermal stability after 1 min post-growth anneals up through 675°C and the PVCR improves to 2.8 for a 575°C 1 min anneal.

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Alloyed junction Ge Esaki diodes on Si substrates realised by aspect ratio trapping technique
Author(s): D. Pawlik, S. Sieg, S.K. Kurinec, S.L. Rommel, Z. Cheng, J.-S. Park, J. Hydrick, A. Lochtefeld
Source: Electronics Letters, Volume 44, Issue 15, July 2008, p. 930 - 932
Type: Article
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A Ge Esaki diode is demonstrated on Si atop a coalesced epitaxial layer of Ge grown through narrow openings in SiO2 that are used to trap threading dislocations from the lattice mismatch. Spin-on doping was used to form the n-type junction and a controlled alloyed reaction of Al and Ge forms the p-type junction. At an alloy temperature of 580°C for 1 s, the Ge-on-Si diodes were found to have a peak-to-valley current ratio of 1.1 with a peak current density of 4.1 kA/cm2.

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