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A simple and new solid-state molten-salt method to synthesise silver (Ag)-doped titanium dioxide (TiO2) nanoparticles for solar light-induced photocatalytic applications is examined. Ag-doped TiO2 nanoparticles with varied Ag content ranging from 3 to 10% were synthesised by a single-step molten-salt synthesis method. The effect of Ag content on the antibacterial and photocatalytic activity of nanoparticles was tested. The prepared nanoparticles were studied by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) spectrometry, ultraviolet–visible (UV–vis) diffusive reflectance spectrometer (UV–vis DRS) and powder X-ray diffraction. The SEM image of nanoparticles clearly showed the presence of agglomerated spherical particles. The EDX analysis of the particles confirmed successful doping of particles in the presence of the Ag in the particles. The doping of Ag in TiO2 produced TiO2 pure anatase phase. According to UV–vis DRS results, increasing Ag-doped content in the Ag-doped TiO2 resulted in a higher visible absorption capability of the materials. Ag doping also improved the antibacterial and photocatalytic activity of TiO2 nanoparticles. The maximum photocatalytic activity under light irradiation was observed for 5% Ag-doped TiO2.
Copper (Cu)-doped cadmium sulphide (CdS) quantum dots (QDs) sensitised zinc oxide photoelectrodes have been fabricated for a solar cell (SC). For the synthesis of QDs, simple chemical methods have been adapted and the QDs were prepared on poly-vinyl alcohol capping agent. The influences of doping on structural properties of QDs have been studied using X-ray diffraction analysis and transmission electron microscopy images. Ultraviolet–visible absorption spectroscopy reveals an enhanced optical absorption in doped QDs. The photovoltaic performance of the Cu-doped CdS QDs was studied by measuring the current density–voltage (J–V) characteristics of the fabricated SC. An enhanced photo-conversion efficiency was observed in doped CdS QDs compared with the undoped QDs sensitised SC.
The low Pr-doped Bi2O3 photocatalyst was prepared via the acrylamide polymerisation method. The photocatalytic activity of prepared samples was evaluated by degrading methyl orange under visible-light irradiation. In comparison to α-Bi2O3 nanoparticles, 4% Pr-α-Bi2O3 photocatalyst exhibit obviously enhanced photocatalytic performance. The theoretical calculation and experimental results show that Pr doping can extend the optical absorption range from 436 to 518 nm and improve the photocatalytic efficiency from 40.9 to 70.4%. This long-wavelength response can be happened because of Pr doping that gives rise to the modification of electron structure and the hybridisation of the energy levels.
Visible and near-infrared light responsed Sn1−x Bi x S2nanosheets was synthesised via a simple hydrothermal method. Rhodamine B was adopted to evaluate the degradation efficiency of the as-prepared samples. Experimental results showed that the doping content of Bi3+ could obviously affect the degradation efficiency of SnS2. It was first increased and then decreased with increasing the Bi3+ content under the visible light irradiation. When the mole fraction of doping Bi3+ was 5%, the as-prepared Sn0.95Bi0.05S2 with a bandgap of 0.38 eV had the highest degradation efficiency of 95.9% in 120 min. Moreover, the as-prepared composites possessed more effective electron–hole pair separation than that of pure SnS2. In addition, a possible degradation mechanism of the as-prepared Sn0.95Bi0.05S2 was proposed.
A widely used approach to reduce the charge recombination and improve the performance of a silicon based Schottky barrier solar cell (SBSC) is to use an interfacial layer between metal and Si. In the present work we have investigated the role of graphene oxide (GO) as interfacial layer for p doped Si (p-Si) based SBSC utilizing AZO (Aluminum doped ZnO) as transparent top contact. The not obvious compatibility of the different layers combined in the solar device results clear from the improvement of all the electrical parameters measured in the AZO/GO/p-Si solar cell respect to the simple AZO/p-Si device used as reference. In particular dark IV characterization put in evidence the majority carrier blocking properties of the GO in this type of structure, with an increment of 140 meV in the barrier height respect to the device without GO, resulting in a 100% enhancement in the final solar cell efficiency.
