- Sort by:
- Newest first
- Titles A to Z
Filter by subject:
- Electrical and electronic engineering [13]
- Components, electron devices and materials [13]
- Semiconductor materials and technology [13]
- Semiconductor technology [13]
- Semiconductor doping [13]
- Semiconductor devices [7]
- Annealing processes in semiconductor technology [5]
- Physics [4]
- Condensed matter: structure, thermal and mechanical properties [4]
- Structure of liquids and solids; crystallography [4]
- [4]
- http://iet.metastore.ingenta.com/content/subject/a6170t,http://iet.metastore.ingenta.com/content/subject/b0000,http://iet.metastore.ingenta.com/content/subject/b0500,http://iet.metastore.ingenta.com/content/subject/b0520,http://iet.metastore.ingenta.com/content/subject/b4000,http://iet.metastore.ingenta.com/content/subject/a4000,http://iet.metastore.ingenta.com/content/subject/a4200,http://iet.metastore.ingenta.com/content/subject/a7000,http://iet.metastore.ingenta.com/content/subject/b2530,http://iet.metastore.ingenta.com/content/subject/b4300,http://iet.metastore.ingenta.com/content/subject/a7200,http://iet.metastore.ingenta.com/content/subject/a7220,http://iet.metastore.ingenta.com/content/subject/a7220f,http://iet.metastore.ingenta.com/content/subject/b0520d,http://iet.metastore.ingenta.com/content/subject/b0520f,http://iet.metastore.ingenta.com/content/subject/b2520,http://iet.metastore.ingenta.com/content/subject/b2530c,http://iet.metastore.ingenta.com/content/subject/b2560b,http://iet.metastore.ingenta.com/content/subject/b2560r,http://iet.metastore.ingenta.com/content/subject/b2560s,http://iet.metastore.ingenta.com/content/subject/a4255,http://iet.metastore.ingenta.com/content/subject/a4255p,http://iet.metastore.ingenta.com/content/subject/a4260,http://iet.metastore.ingenta.com/content/subject/a4260d,http://iet.metastore.ingenta.com/content/subject/a4265,http://iet.metastore.ingenta.com/content/subject/a4265p,http://iet.metastore.ingenta.com/content/subject/a4280,http://iet.metastore.ingenta.com/content/subject/a4280l,http://iet.metastore.ingenta.com/content/subject/a4280s,http://iet.metastore.ingenta.com/content/subject/a4282,http://iet.metastore.ingenta.com/content/subject/a4285,http://iet.metastore.ingenta.com/content/subject/a4285d,http://iet.metastore.ingenta.com/content/subject/a6116,http://iet.metastore.ingenta.com/content/subject/a6116d,http://iet.metastore.ingenta.com/content/subject/a6170a,http://iet.metastore.ingenta.com/content/subject/a6180,http://iet.metastore.ingenta.com/content/subject/a6180j,http://iet.metastore.ingenta.com/content/subject/a6600,http://iet.metastore.ingenta.com/content/subject/a6630,http://iet.metastore.ingenta.com/content/subject/a6630n,http://iet.metastore.ingenta.com/content/subject/a7280,http://iet.metastore.ingenta.com/content/subject/a7280j,http://iet.metastore.ingenta.com/content/subject/a7800,http://iet.metastore.ingenta.com/content/subject/a7865,http://iet.metastore.ingenta.com/content/subject/a7865k,http://iet.metastore.ingenta.com/content/subject/a8000,http://iet.metastore.ingenta.com/content/subject/a8100,http://iet.metastore.ingenta.com/content/subject/a8115,http://iet.metastore.ingenta.com/content/subject/a8115g,http://iet.metastore.ingenta.com/content/subject/b1000,http://iet.metastore.ingenta.com/content/subject/b1300,http://iet.metastore.ingenta.com/content/subject/b1350,http://iet.metastore.ingenta.com/content/subject/b1350f,http://iet.metastore.ingenta.com/content/subject/b2100,http://iet.metastore.ingenta.com/content/subject/b2120,http://iet.metastore.ingenta.com/content/subject/b2520d,http://iet.metastore.ingenta.com/content/subject/b2520m,http://iet.metastore.ingenta.com/content/subject/b2530f,http://iet.metastore.ingenta.com/content/subject/b2550e,http://iet.metastore.ingenta.com/content/subject/b2560h,http://iet.metastore.ingenta.com/content/subject/b2570,http://iet.metastore.ingenta.com/content/subject/b4100,http://iet.metastore.ingenta.com/content/subject/b4130,http://iet.metastore.ingenta.com/content/subject/b4140,http://iet.metastore.ingenta.com/content/subject/b4320,http://iet.metastore.ingenta.com/content/subject/b4320j,http://iet.metastore.ingenta.com/content/subject/b4320l,http://iet.metastore.ingenta.com/content/subject/b4340,http://iet.metastore.ingenta.com/content/subject/b4340p,http://iet.metastore.ingenta.com/content/subject/b4360,http://iet.metastore.ingenta.com/content/subject/b4360b,http://iet.metastore.ingenta.com/content/subject/b6000,http://iet.metastore.ingenta.com/content/subject/b6200,http://iet.metastore.ingenta.com/content/subject/b6260,http://iet.metastore.ingenta.com/content/subject/b6260c
- a6170t,b0000,b0500,b0520,b4000,a4000,a4200,a7000,b2530,b4300,a7200,a7220,a7220f,b0520d,b0520f,b2520,b2530c,b2560b,b2560r,b2560s,a4255,a4255p,a4260,a4260d,a4265,a4265p,a4280,a4280l,a4280s,a4282,a4285,a4285d,a6116,a6116d,a6170a,a6180,a6180j,a6600,a6630,a6630n,a7280,a7280j,a7800,a7865,a7865k,a8000,a8100,a8115,a8115g,b1000,b1300,b1350,b1350f,b2100,b2120,b2520d,b2520m,b2530f,b2550e,b2560h,b2570,b4100,b4130,b4140,b4320,b4320j,b4320l,b4340,b4340p,b4360,b4360b,b6000,b6200,b6260,b6260c
- [4],[4],[4],[4],[4],[3],[3],[3],[3],[3],[2],[2],[2],[2],[2],[2],[2],[2],[2],[2],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1]
- /search/morefacet;jsessionid=669v72gb4b8iv.x-iet-live-01
- /content/searchconcept;jsessionid=669v72gb4b8iv.x-iet-live-01?operator4=AND&operator5=AND&pageSize=50&sortDescending=true&value5=b2000&facetNames=pub_concept_facet+pub_year_facet+pub_concept_facet+pub_concept_facet+pub_concept_facet&value3=2002&value4=b&value1=b2550b&option5=pub_concept_facet&value2=b2500&option1=pub_concept&facetOptions=2+3+4+5+6&option2=pub_concept_facet&option3=pub_year_facet&option4=pub_concept_facet&sortField=prism_publicationDate&operator3=AND&operator2=AND&operator6=AND&option6=pub_concept_facet&value6=
- See more See less
Filter by content type:
Filter by publication date:
- 2002 [13]
Filter by author:
- B.J. Sealy [2]
- R. Gwilliam [2]
- S. Ahmed [2]
- A. Boukabache [1]
- A. Krotkus [1]
- A. Wolos [1]
- A.A. Rezazadeh [1]
- A.H. Onstine [1]
- B. Luo [1]
- B.P. Gila [1]
- C. Jeynes [1]
- C.R. Abernathy [1]
- C.S. Oh [1]
- D.B. Poker [1]
- Eun Sik Jung [1]
- F. Ren [1]
- G.L. Harris [1]
- H. Miura [1]
- H.C. Kim [1]
- H.G. Ahn [1]
- H.S. Djie [1]
- J. Beauvais [1]
- J. Beerens [1]
- J. Kim [1]
- J. Siegert [1]
- J.-F. Roux [1]
- J.-L. Coutaz [1]
- J.C. White [1]
- J.K. Mun [1]
- J.W. Seo [1]
- J.W. Yang [1]
- Ji Chel Bea [1]
- Jin-Young Kang [1]
- Jung-Wook Lim [1]
- K. Bertulis [1]
- K. Korona [1]
- Kyu-Hwan Shim [1]
- M. Kaminska [1]
- O. Gunawan [1]
- P. Bienstman [1]
- P. Dowd [1]
- P. Pons [1]
- P. Too [1]
- P.W. Chien [1]
- R. Baets [1]
- R. Mehandru [1]
- S. Koh [1]
- S. Marcinkevičius [1]
- S.C. Lee [1]
- S.J. Chang [1]
- S.J. Pearton [1]
- S.L. Ng [1]
- S.L. Wu [1]
- V. Aimez [1]
- Vo Van Tuyen [1]
- Y. Irokawa [1]
- Y. Shiraki [1]
- Young Jae Lee [1]
- Young-Joo Song [1]
- Yunhong Wu [1]
- Zhirun Hu [1]
- See more See less
Semi-insulating regions have been obtained in 6H and 4H silicon carbide using ion implantation. The silicon carbide samples were implanted with either carbon or silicon ions followed by isochronal heat treatments. This leads to compensation, which is achieved by the lattice damage and by the thermal redistribution of atoms.
A modulation-doped SiGe pMOSFET with a high transconductance (Gm) has been successfully fabricated through well-controlled boron δ-doping by reduced pressure chemical vapour deposition (RPCVD). Compared to a Si-control pMOSFET, it shows 30% enhanced Gm up to 102 mS/mm for 0.3 µm gate length, which is even larger than the reported value of a molecular beam epitaxy grown SiGe pMOSFET with a similar device design.
P-type SiGe/Si HFETs with different position of the δ-doped layer in the SiGe channel are reported for the first time. For the same device structure with a 1×100 µm2 gate, bottom-delta-doped-channel devices display a wide and flat range of uniform gm distribution of 1.4 V, and 0.9 V in top-delta-doped-channel devices. Compared to the latter devices, a high gate-to-drain breakdown voltage (>25 V) due to a better carrier confinement together with a higher current density for the bottom-delta-doped-channel devices was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.
An ion implanted n+-n−-p+-n+ bulk unipolar camel diode on a high resistivity silicon substrate has been designed and fabricated. The bulk unipolar diode characteristics have successfully demonstrated with barrier height of 0.69 V and ideality factor of 1.7. Using multi-implantation process alone to form the layer structure significantly reduces the device unit cost. To the best of the authors' knowledge this is the first fully ion implanted camel diode reported on high resistivity silicon.
An effective inter-device isolation has been obtained by implanting iron into n-type InP. The effect of 1 MeV iron (Fe) implantation into n-type InP at 77K, room temperature (RT) and 200°C has been investigated with various ion doses in the range of 1×1012 to 1×1015/cm2. It is found that RT and 77K implants show better isolation than 200°C implants. Rutherford backscattering spectrometry (RBS) is used to gain a better understanding of the isolation mechanisms.
A novel optical VCSEL model is presented, based on vectorial eigenmode expansion combined with perfectly matched layer (PML) boundary conditions. It is fully rigorous and computationally efficient, as the PML boundaries eliminate parasitic reflections and allow the metal discretisation wall to be placed much closer to the device under study. The model is illustrated with a number of simulation results on proton-implanted, airpost and oxide-confined VCSELs. The trade-off between tight transverse optical confinement and scattering loss is clearly illustrated.
The interdiffusion effect on the strain build-up and refractive index profile of lattice-matched InGaAs/InGaAsP multiple quantum wells is reported. Interdiffusion is achieved experimentally using low energy (360 keV) arsenic or phosphorus ion-implantation-induced disordering, followed by an annealing step. A model of the interdiffusion process has been developed to analyse the effect of different interdiffusion ratios on the waveguide's polarisation behaviour through the strain build-up and the refractive index profiles for the transverse electric and transverse magnetic modes. Polarisation-resolved photocurrent absorption measurements of quantum-well waveguide structures have shown that sufficiently high ion implantation doses can lead to the realisation of polarisation-insensitive waveguides at 1.55 µm wavelength operation. Comparison with the modelling results shows that the polarisation-dependent behaviour of the waveguides is best described by a higher interdiffusion ratio for the group V than for the group III atoms.
A novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension region is described. A new ultra-shallow junction formation technology, which is based on a damage-free process for replacing low energy ion implantation, is realised using ultra-high vacuum chemical vapour deposition and excimer laser annealing.
The total surface state density was measured in n+p gate-controlled Sc2O3/p-GaN diodes using the charge pumping technique. For MBE deposition of Sc2O3 at 650°C onto a p-GaN layer with hole density 2×1017 cm−3 at 25°C, the total surface state density was 3×1012 cm−2 after implant activation annealling to form the n+ source and drain regions.
Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to σn=1.1×10−13 and σp=1.8×10−15 cm2 were also determined.
Selective Si interdiffusion into ion implanted GaAs from SiN encapsulation was observed and a GaAs MESFET with a highly conductive layer was developed using the interdiffusion. During the annealing of implanted 29Si at 950°C, Si was selectively diffused into the ion implanted region from SiN encapsulation and formed a highly conductive layer near the surface. The diffused Si improved the ohmic contact resistivity and electrical characteristics of the MESFET.
Doping effects on the thermal behaviour of a silicon resistor are studied using different models of hole mobility. The results indicate that the two thermal coefficients of the resistor are strongly dependent on doping concentration. For the first-order coefficient α, there is a minimal value (∼250 ppm/°C) for a particular doping concentration (∼4×1018 cm−3); for the second-order coefficient β, its value decrease monotonously according to doping concentration, until zero.
Hydrogen has been implanted into n-type GaAs layers to obtain inter-device isolation. The effects of variable doses and target temperature during implantation on the degree of isolation have been investigated. Possible identification of antisite defects responsible for isolation and their sensitivity to enhanced dynamic annealing is discussed. The role of threshold doses for an effective isolation scheme is investigated. It is found that hot implants provide better optimisation of the isolation process.
