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Semiconductor doping

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  • 2002 [1]

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Analysis of strain-induced polarisation-insensitive integrated waveguides fabricated using ion-implantation-induced intermixing
Author(s): H.S. Djie, S.L. Ng, O. Gunawan, P. Dowd, V. Aimez, J. Beauvais, J. Beerens
Source: IEE Proceedings - Optoelectronics, Volume 149, Issue 4, 2002 , p. 138 - 144
Type: Article
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The interdiffusion effect on the strain build-up and refractive index profile of lattice-matched InGaAs/InGaAsP multiple quantum wells is reported. Interdiffusion is achieved experimentally using low energy (360 keV) arsenic or phosphorus ion-implantation-induced disordering, followed by an annealing step. A model of the interdiffusion process has been developed to analyse the effect of different interdiffusion ratios on the waveguide's polarisation behaviour through the strain build-up and the refractive index profiles for the transverse electric and transverse magnetic modes. Polarisation-resolved photocurrent absorption measurements of quantum-well waveguide structures have shown that sufficiently high ion implantation doses can lead to the realisation of polarisation-insensitive waveguides at 1.55 µm wavelength operation. Comparison with the modelling results shows that the polarisation-dependent behaviour of the waveguides is best described by a higher interdiffusion ratio for the group V than for the group III atoms.

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