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The gettering efficiency of silicon implanted with carbon ions in the energy range 0.33–10 MeV was tested by carrier lifetime measurements. After an intentional contamination of the sample back side with gold as a lifetime killer, we found values for the generation lifetime of the minority carriers on the front side higher by 1–2 orders of magnitude as compared with unimplanted silicon.
Er3+ electroluminescence at 1.54 μm has been observed from p-n junction diodes fabricated from ≈ 1 μm Er doped GaAs layers produced by high energy ion implantation. These unique junctions are formed directly by the p-type conversion of the n-type substrate material within the implantation profile. The low efficiencies observed in these devices ( n ≈ 10−6) are believed to be related to the small fraction of the implanted Er in the Er3+ state.
A Zn diffusion stripe laser is fabricated by the metalorganic chemical vapour deposition and the open-tube, two-step, solid-phase diffusion technique. The threshold current is 9.4 mA and the lasing wavelength is 780 nm at 20°C. The laser operates in the fundamental transverse mode and the astigmatic distance is less than 1 μm. The laser has operated for over 1000 h at 60°C with a power of 3 mW.
The effect of n-type dopant species on the compensating behaviour of oxygen implants has been studied using Hall effect and C/V profiling techniques. Stronger compensation is retained if silicon rather than selenium is used to form the n-type layer. The compensation has been separated into damage related and oxygen atom related mechanisms, both of which are shown to be n-type dopant sensitive. The dopant sensitivity of the damage related compensation is tentatively described by assuming that localised regions of stoichiometric imbalance are introduced by the oxygen implantation, which promotes activation on the arsenic site. However, the reason for the dopant sensitivity of the oxygen atom related mechanism remains unclear.
Large dopant deactivation effects occur when p-InP is cooled in ambients containing DMZn. This does not appear to be the result of hydrogen passivation, rather we believe it to be caused by the presence of high concentrations of interstitial donors.
