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The fabrication and characterisation of two-dimensional phase-locked arrays of vertical cavity surface emitting lasers is reported. The three two-dimensional array structures characterised were a 2 × 3 periodic array of 10μm2 lasers, a hexagonal array and a centred hexagonal array of 5 μm hexagonal lasers. All arrays were fabricated using the same technique which was a combination of mesa etching and oxygen implantation isolation.
A Zn diffusion stripe laser is fabricated by the metalorganic chemical vapour deposition and the open-tube, two-step, solid-phase diffusion technique. The threshold current is 9.4 mA and the lasing wavelength is 780 nm at 20°C. The laser operates in the fundamental transverse mode and the astigmatic distance is less than 1 μm. The laser has operated for over 1000 h at 60°C with a power of 3 mW.
We fabricated low threshold In0.2Ga0.8As surface emitting microlasers having various etch depths and sizes. Comparison of electrical and optical properties was made between deep etched (deeper than the active layer) and shallow etched (shallower than the active layer) microlasers. Shallow etched microlasers were F-ion implanted to limit current spreading. The ion implanted shallow etched samples, when larger than about 5 µm across, show improved room temperature CW characteristics with lower resistances and lower operating voltages than the deep etched microlasers.
The buried-ridge stripe (BRS) laser has been modified for integration purposes. Adapting the laser to a quasi-planar configuration on the semi-insulating substrate, we report on an important improvement of the integrable BRS laser characteristics as compared with previously published ones. Also, the technology for this modified structure is shown to be compatible with the implanted transistor technology. No significant effect on the laser characteristics has been seen after Si implantation and subsequent heat treatment at 850°C for 10 s. A threshold current as low as 9.5 mA and an optical bandwidth of 6.1 GHz have been obtained in the case of Si implantation carried out after laser fabrication.
