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Both n-type InP and InGaAs layers are electrically isolated using iron and krypton ion implantation at 77K to create thermally-stable highly resistive regions. The data suggests that, in both InP and InGaAs, chemical induced compensation operates above a post-implant annealing temperature of 500°C for iron implant isolation. However, in the case of krypton, damage induced isolation is the only compensation mechanism responsible for electrical isolation in both materials. The isolation scheme used looks promising to III–V semiconductor industries since such high sheet resistance values (∼107 Ω/sq) with a broad thermally-stable window are obtained for both n-type InP and InGaAs materials.
Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm−2 in 〈100〉 silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.
Impurity induced disordering of an InGaAs/InGaAlAs quantum well structure has been investigated using boron and fluorine. The impurities were introduced by ion implantation and followed by thermal annealing. Small blue shifts in the exciton peak were observed in the boron implanted material. Much larger blue shifts, over 40 meV, were observed in the fluorine implanted material. At annealing temperatures greater than 650°C, red shifts in the exciton peak of unimplanted material were measured.
PECVD Si3N4 was deposited on undoped SI (100) GaAs. Se+ ions were implanted with a dose of 1×1014 ions cm−2 at an ion energy of 400 keV through the Si3N4 layer. Annealing was carried out on a dual graphite strip heater at temperatures up to 900°C for 100 s. Transmission electron microscope studies show a large concentration of damage in the form of dense dislocation tangles and long-range strain centres at the Si3N4/GaAs interface. Below this sheet of gross damage the material contains a relatively low density of dislocation loops. Electrical measurements indicate that, for a similar implant condition directly into GaAs, a relatively high electrical activity is measured compared with that of the implants through the Si3N4 encapsulating layer.
