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Semiconductor doping

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High-performance InP/InGaAs heterojunction bipolar transistors with highly carbon-doped base grown by chemical beam epitaxy
Author(s): J.-I. Song, C.J. Palmstrom, B.P. Van der Gaag, W.-P. Hong, J.R. Hayes, K.B. Chough
Source: Electronics Letters, Volume 29, Issue 8, April 1993, p. 666 - 667
Type: Article
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InP/In0.53Ga0.47As heterojunction bipolar transistors (HBTs) using a highly carbon-doped base are reported. High carbon doping has been achieved by chemical beam epitaxy (CBE). The resulting hole concentration in the carbon-doped base is as high as 7 × 1019/cm3. To our knowledge, this is the highest doping level reported using carbon. HBTs with 20 Å spacer layer exhibited nearly ideal I-V characteristics with collector and base current ideality factor of 1.018 and 1.037, respectively. Current gain and breakdown voltage BVCEO were 7 and 6 V, respectively.

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Collector/emitter offset voltage in double-heterojunction bipolar transistors
Author(s): J.R. Hayes, A.C. Gossard, W. Wiegmann
Source: Electronics Letters, Volume 20, Issue 19, September 1984, p. 766 - 767
Type: Article
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Double-heterojunction bipolar transistors (DHBT) can exhibit a large collector/emitter offset voltage at zero collector current which will adversely affect digital switching circuits. It is shown that this effect results from insufficient grading at the base/collector heterojunction. A GaAlAs/GaAs DHBT grown by MBE having a 130 Å compositional grading at the emitter/base and base/collector junction showed no sign of the collector/emitter offset voltage.

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