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Semiconductor doping

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Nickel ohmic contacts to p- and n-type 4H-SiC
Author(s): L.G. Fursin, J.H. Zhao, M. Weiner
Source: Electronics Letters, Volume 37, Issue 17, August 2001, p. 1092 - 1093
Type: Article
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The first demonstration of Ni ohmic contacts to both p+ and n+ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10-4 Ωcm2 and 10-6 Ωcm2 for p+ and n+ 4H-SiC, respectively, have been determined by the transfer length method.

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Carbon and aluminium co-implantation for p-type doping in 6H-SiC
Author(s): K. Tone, S.R. Weiner, J.H. Zhao
Source: Electronics Letters, Volume 33, Issue 22, October 1997, p. 1904 - 1906
Type: Article
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N-type 6H-SiC wafers have been implanted with C and Al, or Al only, at room temperature or 600°C for a comparative study with the emphasis on determining the dependence of the sheet resistivity and specific contact resistance of Al ohmic contacts on the concentration of implanted Al. The optimum implantation concentration is reported for the first time, along with clear evidence showing the advantage of C-Al co-implantation over Al single implantation.

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