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Semiconductor doping

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Electrical isolation of InP and InGaAs using iron and krypton
Author(s): P. Too, S. Ahmed, R. Gwilliam, B.J. Sealy
Source: Electronics Letters, Volume 40, Issue 20, September 2004, p. 1302 - 1304
Type: Article
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Both n-type InP and InGaAs layers are electrically isolated using iron and krypton ion implantation at 77K to create thermally-stable highly resistive regions. The data suggests that, in both InP and InGaAs, chemical induced compensation operates above a post-implant annealing temperature of 500°C for iron implant isolation. However, in the case of krypton, damage induced isolation is the only compensation mechanism responsible for electrical isolation in both materials. The isolation scheme used looks promising to III–V semiconductor industries since such high sheet resistance values (∼107 Ω/sq) with a broad thermally-stable window are obtained for both n-type InP and InGaAs materials.

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Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon
Author(s): T. Alzanki, R. Gwilliam, N. Emerson, B.J. Sealy
Source: Electronics Letters, Volume 40, Issue 12, June 2004, p. 774 - 775
Type: Article
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Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm−2 in 〈100〉 silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.

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Se+ ion implantation into encapsulated GaAs
Author(s): M.A. Shahid, R. Gwilliam, B.J. Sealy
Source: Electronics Letters, Volume 21, Issue 17, August 1985, p. 729 - 730
Type: Article
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PECVD Si3N4 was deposited on undoped SI (100) GaAs. Se+ ions were implanted with a dose of 1×1014 ions cm−2 at an ion energy of 400 keV through the Si3N4 layer. Annealing was carried out on a dual graphite strip heater at temperatures up to 900°C for 100 s. Transmission electron microscope studies show a large concentration of damage in the form of dense dislocation tangles and long-range strain centres at the Si3N4/GaAs interface. Below this sheet of gross damage the material contains a relatively low density of dislocation loops. Electrical measurements indicate that, for a similar implant condition directly into GaAs, a relatively high electrical activity is measured compared with that of the implants through the Si3N4 encapsulating layer.

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