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Semiconductor doping

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Comparative optical study of GaAs1−xNx/GaAs and BxGa1−xAs/GaAs epilayers
Author(s): F. Saidi, F. Hassen, H. Maaref, H. Dumont, Y. Monteil
Source: IEE Proceedings - Optoelectronics, Volume 151, Issue 5, 2004 , p. 342 - 345
Type: Article
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Optical studies of GaAs1−xNx/GaAs and BxGa1−xAs/GaAs epilayers grown by metal organic chemical vapour deposition (MOCVD), with various nitrogen (N) and boron (B) compositions, have been achieved by photoluminescence spectroscopy (PL) as a function of the excitation density and the sample temperature (10–300 K). The experiments have shown that the GaAsN PL band emission presents a more significant red shift than the BGaAs emission. For the GaAsN a reduction of 110 meV/1%N is shown, but for the BGaAs the PL band emission shifts to the low-energy side by up to 2.5%. A more significant blue shift of the PL bands with increasing the excitation density has been observed for GaAsN compared to BGaAs epilayer structures. The temperature dependence of the PL peak energy has shown S-shaped behaviour for both structures, but the localisation effects are more important in GaAsN than in BGaAs. Based on these experimental results, it is shown that B incorporation does not cause large modification of the band structure in BxGa1−xAs alloys compared to pure GaAsN structures.

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GaInNAs(Sb) long wavelength communications lasers
Author(s): J.S. Harris, S.R. Bank, M.A. Wistey, H.B. Yuen
Source: IEE Proceedings - Optoelectronics, Volume 151, Issue 5, 2004 , p. 407 - 416
Type: Article
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Dilute nitride GaInNAs and GaInNAsSb alloys grown on GaAs have quickly become excellent candidates for a variety of lower cost 1.2–1.6 μm lasers, optical amplifiers and high-power Raman pump lasers that will be required to power the Internet and advanced communications systems capable of delivering multi-Gbit/s data rates to the desktop. Two particularly critical devices are vertical-cavity surface-emitting lasers (VCSELs) which must operate at high data rates (≥10 Gbit/s), uncooled over a broad thermal operating range and high power (≥500 mW) edge-emitting lasers for Raman amplifier pumps. Despite the fact that these materials are grown in a metastable regime, and there are still many remaining challenges, progress has been both rapid and very promising. Some of the material challenges include the limited solubility of N in GaAs, nonradiative defects that are caused by either or a combination of N incorporation, low growth temperature, and ion damage from the N plasma source. N and Sb add a unique set of properties to this metastable alloy; however, this significantly increases the complexity of its characterisation. The addition of Sb significantly improves the epitaxial growth and optical properties of the material at wavelengths longer than 1.3 μm and broadens the range of In and N composition alloys that can be grown. By adding Sb to the alloy, luminescence has been greatly enhanced between 1.3 and 1.6 μm where normally poor quality material results. Progress in overcoming some of the material challenges is described, particularly GaAsNSb against GaNAs QW barriers, plasma-source ion damage and progress in realising record-setting edge-emitting lasers and the first VCSELs operating at 1.5 μm based on GaInNAsSb QWs grown by solid-source MBE on GaAs.

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Epitaxy and characterisation of dilute III–As1−yNy on GaAs and InP
Author(s): K. Köhler, J. Wagner, P. Ganser, D. Serries, T. Geppert, M. Maier, L. Kirste
Source: IEE Proceedings - Optoelectronics, Volume 151, Issue 5, 2004 , p. 247 - 253
Type: Article
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Epitaxial growth and characterisation of Ga1−xInxAs1−yNy films and quantum wells are presented. Starting with the epitaxy on GaAs, recent results on the local bonding of nitrogen in Ga1−xInxAs1−yNy are reviewed, revealing that bonding of nitrogen is controlled by an interplay between bond cohesive energy and reduction of local strain. Thus, III–N bonding can be changed from Ga–N to In–N by post-growth thermal annealing. For high In-content Ga1−xInxAs1−yNy on InP it is demonstrated that only small amounts of Ga are necessary to cause the bonding of the nitrogen atoms to at least one Ga neighbour. The epitaxy on InP substrates, equivalent to a drastic increase in indium content, allows an extension of optical transitions to longer wavelengths. The feasibility of high In-content Ga1−xInxAs1−yNy pseudomorphic quantum wells on InP is shown. The deterioration of the photoluminescence properties with increasing nitrogen incorporation can be partially compensated by thermal annealing. Within the resolution limits of the secondary ion mass spectrometry experiments, no annealing-induced loss of nitrogen was observed. The indium-rich strained Ga0.22In0.78As0.99N0.01 quantum wells are shown to exhibit room-temperature photoluminescence at wavelengths up to 2.3 μm. Finally quantum well lasers emitting at wavelengths beyond 2 μm are demonstrated.

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Electrical isolation of InP and InGaAs using iron and krypton
Author(s): P. Too, S. Ahmed, R. Gwilliam, B.J. Sealy
Source: Electronics Letters, Volume 40, Issue 20, September 2004, p. 1302 - 1304
Type: Article
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Both n-type InP and InGaAs layers are electrically isolated using iron and krypton ion implantation at 77K to create thermally-stable highly resistive regions. The data suggests that, in both InP and InGaAs, chemical induced compensation operates above a post-implant annealing temperature of 500°C for iron implant isolation. However, in the case of krypton, damage induced isolation is the only compensation mechanism responsible for electrical isolation in both materials. The isolation scheme used looks promising to III–V semiconductor industries since such high sheet resistance values (∼107 Ω/sq) with a broad thermally-stable window are obtained for both n-type InP and InGaAs materials.

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GaAs passivation by low-frequency plasma-enhanced chemical vapour deposition of silicon nitride
Author(s): A. Jaouad, V. Aimez, Ç. Aktik
Source: Electronics Letters, Volume 40, Issue 16, August 2004, p. 1024 - 1026
Type: Article
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Passivation of GaAs by silicon nitride (SixNy) deposition using low-frequency PECVD (LF PECVD) is presented. The high amount of hydrogen implantation during this process enhances the passivation effect, demonstrating for the first time the unpinning of the Fermi level by a simple deposition of SixNy on a deoxidised GaAs surface. The (NH4)2S/SixNy passivation is also simplified, and MIS capacitors are fabricated by a novel process, which consists in exposing the GaAs surface directly to sulphur solution, without the usual deoxidation etching step, followed by the deposition of LF PECVD SixNy. Good modulation of the surface potential is observed, and the interface state density (Dit) as measured from 1 MHz C–V characteristics has a minimum of 3×1011 cm−2 eV−1.

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Carrier and mobility profiling of ultra-shallow junctions in Sb implanted silicon
Author(s): T. Alzanki, R. Gwilliam, N. Emerson, B.J. Sealy
Source: Electronics Letters, Volume 40, Issue 12, June 2004, p. 774 - 775
Type: Article
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Differential Hall effect measurements have been carried out to obtain electron concentration and mobility profiles for 2 keV implants of 1×1015 Sb+ cm−2 in 〈100〉 silicon with nanometre resolution. A comparison is made between carrier and atomic profiles determined using secondary ion mass spectroscopy.

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