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This paper discusses the problem of conversion efficiency in photovoltaics cells. Most installations today use a central inverter to deliver AC electricity to the grid. This puts most of the complex electronic control needed to synchronise with the grid into one unit.
A laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for the large-area (156×156 mm2) solar-cell industry. The best efficiency of 16.35% is obtained with the developed SE structure after a damage removal process with optimisation of heavily and lightly doped dopants, which yields a gain of 0.88% absolute compared with that of a reference cell. Significantly, the SE mc-Si solar cell without the damage removal process can also reach a gain of 0.48% absolute. The developed SE process has simplicity, reliability, is fast, cost-effective, and could be effectively applied to mass production in industrial applications.
Thin-film technology has propelled one supplier past silicon solar cell makers. But will the rarity of the raw materials bring an early end for the upstarts of PV.
This paper provides an analysis of the irradiance influence on photovoltaic cell efficiency in dependence on the cell construction, using the standard equivalent circuit describing solar cell. The influence of the series resistance is discussed in details and results of simulations are completed with experimental result obtained by measuring both crystalline silicon and CIS cells in broad intervals of irradiance and temperature. (4 pages)
Direct conversion of solar energy into electricity using the photovoltaic effect suffers of low efficiency. Thus, increasing the efficiency conversion becomes the major goal of solar cells manufacturers. One way to increase efficiency is by applying intrinsic semiconductor widening layer in the depletion zone of a P-N junction. P-I-N based Photovoltaic structures on single-crystalline silicon were built using "Sheet Plasma" sputtering method. Intrinsic silicon films and indium oxide films were grown in series on a conventional p-type silicon wafer. Optical and electrical properties of the deposited films were investigated using laboratory equipment. It was found that the bandgap of the intrinsic silicon layer equals to 1.3 eV and the bandgap of the emitter layer (In2O3) equals to 3.04 eV. Resistivity of the obtained emitter layer was equal to 5.24-10-3 Ω·cm. Efficiency of the photovoltaic structures was no more than 2%. This paper proves feasibility of growing photovoltaic devices using Sheet Plasma sputtering methods. (4 pages)
