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We report the properties of metal-insulator-semiconductor (MIS) solar cells based on n-type CdTe and an anthracene derivative deposited by the Langmuir-Blodgett technique. The incorporation of the organic insulating layer between a gold electrode and the CdTe is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions. The Langmuir-Blodgett deposition technique has allowed us to investigate, in some detail, the dependence of these characteristics on the thickness of the insulating layer. The optimum efficiency of our devices occurs when theorganic film thickness is approximately 2.4nm.
A numerical simulation of the open circuit voltage decay of junction solar cells has been done including a double exponential model for DC I(V) characteristics and dynamic capacitive effects arising from quasineutral and space-charge regions
Problems inherent in conventional p-n junction solar cells are discussed. The principle of operation of min m.i.s. solar cells is then described. Among other advantages it is shown that the min m.i.s. solar cells are capable of giving a much higher Voc compared to the p-n junction solarcells. Problems associated with the min m.i.s. solar cells are also discussed. These include the incompatibility of light transmission and conductivity properties of the metal contact in the case of the contact covering the whole of the top surface, the contact linewidth/space ratio in the case of grating cells, resistivity dependence of Voc and degradation of cell performance in time.
A flash-lamp testing technique for the measurement of GaAs concentrator solar cells is described. This method allows a simple and rapid evaluation of efficiency, series resistance and fill factor of the cell at high concentrations. A comparison with outdoor measurements is also reported.
Aluminium p-type polysilicon contacts display a rectifying behaviour which exhibits an aging towards reduced Schottky barrier heights and increased n-values or ideality factors. The time scale for this aging process increases dramatically with the thickness of the aluminium layer in the range 100–1000 Å, and the overall behaviour is in accordance with the model of Ponpon and Siffert for transport of oxygen through the aluminium film to the polysilicon surface.
New developments in Cu2S thin-film technology allow, in principle, the combination of Cu2S with semiconductors other than CdS or Cd1−xZnxS for solar cell purposes. We discuss here a pn+-type Cu2S-ZnO structure that offers some basic advantages over existing structures. Our analysis predicts a practically achievable efficiency of 17.8%.
A new and easy method for maximum power consideration in solar cells has been developed. The general condition for maximum power dP = (∂P/∂I) dI + (∂P/∂V) dV = 0 has been used to obtain the required results. Solar cells both with and without losses have been considered.
