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Semiconductor doping

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High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
Author(s): C.Y. Jin, H.Y. Liu, T.J. Badcock, K.M. Groom, M. Gutiérrez, R. Royce, M. Hopkinson, D.J. Mowbray
Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, 2006 , p. 280 - 283
Type: Article
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A high-growth-temperature GaAs spacer layer (HGTSL) is shown to significantly improve the performance of 1.3 µm multilayer InAs/GaAs quantum-dot (QD) lasers. The HGTSL inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved performance of QD lasers. To further reduce the threshold current density and improve the room-temperature characteristic temperature (T0), the high-reflection (HR) coating and p-type modulation doping have been incorporated with the HGTSL technique. A very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A cm−2 are achieved for a three-layer device with a 1 mm HR/HR cavity, while a very low threshold current density of 48 A cm−2 and a negative T0 are achieved in the p-doped lasers.

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Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures
Author(s): I.C. Sandall, C.L. Walker, P.M. Smowton, D.J. Mowbray, H.Y. Liu, M. Hopkinson
Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, 2006 , p. 316 - 320
Type: Article
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The segmented contact method is used to study the performance of intrinsic and p-doped quantum dot structures emitting at 1.3 µm. From measurements of the absorption, it is shown that despite being doped to a level of 18 acceptor atoms per dot, only 19% of the quantum dot states are filled by excess holes, illustrating the importance of the continuum states in the wetting layer. We directly measure the modal gain and non-radiative recombination and show that the modal gain is increased as a function of transparency point when p-dopants are introduced without a significant increase in non-radiative recombination. These results explain the 65% reduction in threshold current observed for uncoated 1500 µm long devices at 300 K.

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