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Thermal imaging of solar cells is important for diagnosing non-uniform operation or point defects, which can reduce cell efficiency. However, imaging with infrared light is impractical for superstrate CdTe cells because the glass substrate blocks transmission of light. It is shown that thermoreflectance – a lock-in technique that detects changes in the reflectivity of visible light – can circumvent this problem and achieve thermal images with spatial resolution limited only by the imaging wavelength. The diagnostic is used to show that a particular defect is a resistive shunt.
Two advanced fabrication methods are introduced: the hydrogen peroxide (H2O2)-added chemical bath deposition technique and molybdenum (Mo) back-contact formation under 3 kW sputter power. The parameters of the short circuit current density (J SC) and conversion efficiency (η) were improved over standard cells when the ZnS buffer layer was deposited in the H2O2-added chemical solution. Otherwise, the fill-factor and η were best at 3 kW Mo sputtering power conditions. Advanced fabrication methods are realised to improve cell performance without modifying the chemical composition of the Cu(In,Ga)Se2 absorption layer.
The novel structure of a solar cell is presented that has the metal–oxide-semiconductor diode at the side wall of the power generation layer. The influence of the field-effect on the recombination of carriers is simulated and the increase of the conversion efficiency of the solar cell by the gate voltage application is discussed. In addition, the relationship between the effect of the gate voltage application on the conversion efficiency, the lifetime and the surface recombination velocity is discussed.
Presented is a silicon solar cell model with fully passivated radial junction nanowire surface decoration and submerged nickel-silicide contact. Numerical simulations using a finite-difference time-domain method have been done to investigate the spectral responses of the solar cell model. The experimental results indicate that, with proper nickel-silicide thickness, the fill factor of the cell can be improved considerably without much degradation on short circuit current density. Under AM 1.5G illumination, the silicon nanowire solar cell device with 50 Å nickel-silicide contact has short circuit current density of 26.3 mA/cm2, open circuit voltage of 586 mV and fill factor of 70.0%, contributing to power conversion efficiency of 10.8%, which is 19% higher than the control device without the nickel-silicide contact.
A start-up circuit, used in a micro-power indoor light energy harvesting system, is described. This start-up circuit achieves two goals: first, to produce a reset signal, power-on-reset (POR), for the energy harvesting system, and secondly, to temporarily shunt the output of the photovoltaic (PV) cells, to the output node of the system, which is connected to a capacitor. This capacitor is charged to a suitable value, so that a voltage step-up converter starts operating, thus increasing the output voltage to a larger value than the one provided by the PV cells. A prototype of the circuit was manufactured in a 130 nm CMOS technology, occupying an area of only 0.019 mm2. Experimental results demonstrate the correct operation of the circuit, being able to correctly start-up the system, even when having an input as low as 390 mV using, in this case, an estimated energy of only 5.3 pJ to produce the start-up.
Nanocrystalline TiO2 was prepared through hydrothermal synthesis using tetrabutyl titanate as starting material. With a constant reaction time of 12 h, the reaction temperature was changed from 120 to 160°C and the pH value of the reaction medium was ranged from 1 to 9. Every specimen of the as-prepared TiO2 powder was characterised by X-ray diffraction, a scanning electron microscope, transmission electron microscopy, high-resolution transmission electron microscopy, selected area electron diffraction and was also used to fabricate dye sensitised solar cells (DSSCs). The experimental results showed that the phase of the powder was affected by the pH value, whereas the particle size depended on the reaction temperature. Pure anatase TiO2 was obtained with the pH value of 3. The solar energy conversion efficiency (η) of the DSSC fabricated with the pure anatase TiO2 prepared at 140°C was 3.64%, which was higher than those with the TiO2 prepared under any other conditions. The purchased TiO2 (P25) was used to make a DSSC for comparison. It turned out that the performance of all the DSSCs with TiO2 prepared by hydrothermal synthesis was higher than that with the P25.
The localised back contact method for SiO2/SiNx/SiO2 (ONO) back surface passivated crystalline silicon solar cells has been investigated using a 1064 nm Nd:YAG laser. From the quasi-steady-state-photoconductance measurements, feasible passivation properties of effective carrier lifetime (τeff), back surface recombination velocity (Seff) and diffusion length (LD) with the ONO passivated layer rather than with the SiNx single layer have been confirmed. Localised point back contacts were formed varying with dot diameter and dot spacing and then the cell performance was characterised from solar simulator measurements. It was confirmed that the cell performance is closely related to the back contact area which is determined by dot diameter and spacing, and dot spacing is the more crucial factor to determine the cell performance than diameter variations.
With the aim of improving energy conversion efficiency of dye-sensitised solar cells (DSCs), three evolutionary algorithms (EAs), namely genetic algorithm, particle swarm optimisation (PSO) and differential evolution, are investigated the first time to extract the DSCs parameters based on the single-diode photovoltaic (PV) equivalent circuit model. By comparing the accuracy, calculation speed and anti-noise ability of the three EA techniques, PSO shows the highest accuracy and the best anti-noise property. To evaluate the parameters, especially the series-internal resistance (R s) that is important for DSCs energy conversion efficiency, a batch of DSCs devices were made and the R s obtained by changing the series resistance value connected with the DSCs. The two methods give the R s approximately equal value, and almost same current–voltage figures based on PSO simulation with measured characteristics, which prove PSO is an efficient computational method and can be used to extract the parameters for the DSCs PV model.
High-performance solar cells and photovoltaic modules exhibit high internal capacitance, limiting the speed of their transient responses including the current–voltage characteristics scans. This study proffers a model-based method to obtain optimal scan time during the current–voltage performance characterisation of a solar cell or module while preserving a pre-set accuracy. Static model parameters are extracted from the quasi-static current–voltage characteristic, whereas the capacitive character, modelled by two bias voltage dependent capacitances, is determined from the open-circuit voltage decay measurement. The obtained model is used to calculate the optimal current–voltage curve scan time. Efficacy of the proposed method is demonstrated through test results obtained on three wafer-based solar cells. I–V curve errors determined by the proposed method at different scan times are in good agreement with the measurements. Results show that in order to achieve < 0.5% error in curve fitting, determined scan times of tested crystalline silicon solar cells lie within the range of 3.6–45 ms for constant angle step semiconductor curve tracer. Use of a capacitive-based curve tracer, however, requires approximately twice that time to retain a comparable error.