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Here to determine the thermal stability of buffered layer organic solar cell (BL-OSC), the effect of post anneal treatment has been studied. To investigate the effect of post annealing, the organic solar cells (OSCs) are annealed at the 120°C for different time duration. It has been observed that the BL-OSC structure exhibits the better thermal stability. Further, as the authors vary the post-annealing time duration from 0 min to 20 min, the power conversion efficiency (PCE) in the case BL-OSC drops by ∼20%, whereas in conventional OSC, the PCE drops by ∼35%. This annealing dependent study shows that, in conventional OSC structure an increase in phase segregation between donor and acceptor molecules reduces exciton dissociation and charge separation, this leads to sharp increase in series resistance and significant reduction in fill factor of the device. Whereas in the case of BL-OSS, there is a minimum reduction in the fill factor, which also determines the superior carrier collection and low recombination on the elevated annealing conditions. Further, the experimental results show that, in comparison with the conventional OSC structure, inserting the pure P3HT interlayer between PEDOT:PSS (hole transport layer) and P3HT:PCBM (photoactive layer) improves the PCE of the device by 34%.
Different ratio incorporation of Ag/TiO2 core–shell nanowires (ATCSN) into TiO2 as an electron transport layer of perovskite solar cells (PSCs) is studied. This structure can prevent the formation of silver halides between perovskite and silver nanowire. It is found that because of the effective improvement of light absorption and separation of photo-generated electron–hole pairs, the introduction of ATCSN leads to increase of short current density and photoelectric conversion efficiency (PCE) of PSCs. 20 mg incorporation of ATCSN PSCs exhibits the best performance of PCE and a 17.7% increase is achieved compared to the control sample.
To improve light absorption, in this study, the narrow band gap highly-ordered free-standing hydrogenated amorphous germanium nanoparticles (a-Ge:H NPs) were introduced into the CH3NH3PbI3−x Cl x films. Here, the NPs were fabricated by means of the radio frequency plasma enhanced chemical vapour deposition system. The effects of hydrogen dilution ratio (RH) on the microstructure and bonding configuration of a-Ge:H NPs were investigated by Raman, transmission electron microscopy and Fourier transform infrared spectroscopy measurements. As RH increases, an improvement in the structure order of a-Ge:H NPs was observed. Compared with the pure CH3NH3PbI3−x Cl x films, the light absorption of the hybrid a-Ge:H NPs/CH3NH3PbI3−x Cl x active layers was improved, and the surface coverage of the hybrid active layers nearly reached 100%. This new finding provided a novel way to solve the universal unfavourable surface coverage problem that existed in the ultrasonic spray-coating process. Meanwhile, compared with the device that is based on pure CH3NH3PbI3−x Cl x films, due to the enhanced light absorption in the visible range, a ∼14.6% enhancement in the power conversion efficiency was achieved based on the hybrid a-Ge:H NPs/CH3NH3PbI3−x Cl x active layers.
Copper (Cu)-doped cadmium sulphide (CdS) quantum dots (QDs) sensitised zinc oxide photoelectrodes have been fabricated for a solar cell (SC). For the synthesis of QDs, simple chemical methods have been adapted and the QDs were prepared on poly-vinyl alcohol capping agent. The influences of doping on structural properties of QDs have been studied using X-ray diffraction analysis and transmission electron microscopy images. Ultraviolet–visible absorption spectroscopy reveals an enhanced optical absorption in doped QDs. The photovoltaic performance of the Cu-doped CdS QDs was studied by measuring the current density–voltage (J–V) characteristics of the fabricated SC. An enhanced photo-conversion efficiency was observed in doped CdS QDs compared with the undoped QDs sensitised SC.
The objective of this study is to present an economic analysis (EA) of actual installed photovoltaic (PV) projects considering Gulf Cooperation Council countries climate conditions. The two analysed PV systems are commissioned in Kuwait and they were chosen to be the scope of this study since the availability of their characteristics. The first system is installed on a school and equipped with thin film (copper indium gallium selenide) solar modules of efficiency equal to 14% and the other system is installed on a commercial building and equipped with monocrystalline solar modules of efficiency equal to 17%. The EA consists of studying the financial parameters related to the two previous projects using two different calculation tools. One tool is developed and presented in this study that is the EA calculator and the other tool is the existing solar advisory model software. The two calculation tools’ results almost match with slight differences considered negligible, so the developed EA calculator is considered validated. As a conclusion, the impact of renewable energy (RE) costs on future investments in RE technologies and especially on PV projects is being evaluated.
In this Letter, the authors present a new analytical method for determining the parameter values for the single-diode model of photovoltaic (PV) panels. More specifically, the authors propose explicit equations for all the parameters of the model so that their values can be directly extracted from the data provided in the PV panel datasheet. The results show that the proposed method provides smaller errors between the calculated and experimental I–V curves than other analytical approaches.
The study proposes designs using 2D photonic crystal (PhC) structure-based thin film heterojunction gallium arsenide (GaAs) solar cell with a periodic pattern having PhC structure extends from top transparent conducting oxide (TCO) to inside the p-AlGaAs window layer placed just above the active layer of GaAs material in one design and in another PhC structure is etched only in TCO. The work presents the comparative analysis of the proposed structure with Lambertian light trapping limits and the planar cell, taken as reference. The study is also performed for double-layer anti-reflective coating (ARC) structure. The study presents the quantitative analysis of the effect of PhC structure in the performance of the design and how the effect varies with the thickness of absorption layer. It has been found that a considerable increase in efficiency has been achieved, especially for thinner active layers, demonstrating the advantage of a wavelength-scale, PhC-based structures for thin-film solar cells. The results have shown that PhC structure (etched till inside p-AlGaAs)-based solar cell exceeds the efficiency of the double ARC-based structure by more than 18% for 50 nm thin active layer cell. The parameters have been optimised and calculated by means of rigorous coupled wave analysis (RCWA).
Cadmium selenide (CdSe) thin films were prepared on indium tin oxide substrate by an alternating cold–hot method, in which cadmium nitrate solution was used as a cold deposition solution, while sodium selenite and potassium borohydride mixed solution was used as a hot deposition solution. The influences of the preparation conditions such as the concentration of Cd(NO3)2, the number of deposition cycle and the cycle time, on the photoelectric performance of the sample under simulated sunlight were explored. The results show that the CdSe thin film prepared under the reaction conditions of 0.06 mol/l Cd(NO3)2 at the tenth deposition cycle (30 s per cycle) reaches the highest photovoltage of 0.285 V. Under the simulated solar illumination, the open-circuit voltage and short-circuit currents are 0.419 V and 5.57 mA/cm2, respectively. X-ray diffraction indicates that the strongest diffraction peak at 42.215° of the (111) crystal plane is corresponding to 15.15 nm CdSe nanocrystals. Scanning electron microscopy observation shows that the thickness of the CdSe film is about 200 nm and the size of the spherical and uniformly dispersed nanocrystals is around 50 nm.
The surface passivation for InGaN/GaN multilayer solar cells was investigated, and it was confirmed that the device with an atomic-layer-deposited (ALD) Al2O3 passivation film showed high internal and external quantum efficiencies of 99 and 84%, respectively, along with a high energy conversion efficiency of 1.31% under a 1-sun air-mass 1.5 global illumination. The current−voltage characteristics indicated that the ALD Al2O3 film improved the surface electrical stability. The carrier lifetime measurements revealed that the ALD Al2O3 film reduced the surface carrier recombination rate and thereby contributed to the improvement of the solar cell performance in a short wavelength region.
The rear point-contact fabricated through the laser-opening technique for mass production was applied on the photovoltaic cells. Laser opening, different layers for passivation (SiO2) and protection (SiN X ) were employed to investigate their impact on the performances of solar cells. The SiN X layer protects the SiO2 layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO2 and SiN X layers, which also achieves a lower contact resistance of 6.66 mΩ·cm2 and a higher light-beam-induced current of 80.77 mA/cm2. The optimal cell also showed longer lifetime and 3–4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.
A low-cost, highly reflective, liquid organic nanostructure silver conductor with superior conductivity, using back contact reflectors in amorphous silicon (a-Si) single-junction superstrate configuration thin-film solar cells produced using a non-vacuum screen printing process is proposed. The conductive paste is composed of Ag nanowires (Ag NWs) mixed with an Ag nanostructure (Ag NS) sheet. The paste is referred to as ‘Ag NWS’. A comparison of silver conductor samples with vacuum-system-sputtered silver samples indicated that the short-circuit current density (J sc) and the open-circuit voltage (V oc) of Ag NWS conductor cells exceeded 0.22 mA/cm2 and 66 mV, respectively. The Ag NWS conductor with back contact reflectors in solar cells was analysed using external quantum efficiency measurements to effectively enhance light-trapping ability in a long wavelength region (580–700 nm). The cells constructed using the optimised Ag NWS demonstrated an increase of approximately 6.1% in power conversion efficiency under AM 1.5 illumination. These results indicated that the Ag NWS conductor back contact reflector layer is a suitable candidate for high-performance a-Si thin-film solar cells.
Two advanced fabrication methods are introduced: the hydrogen peroxide (H2O2)-added chemical bath deposition technique and molybdenum (Mo) back-contact formation under 3 kW sputter power. The parameters of the short circuit current density (J SC) and conversion efficiency (η) were improved over standard cells when the ZnS buffer layer was deposited in the H2O2-added chemical solution. Otherwise, the fill-factor and η were best at 3 kW Mo sputtering power conditions. Advanced fabrication methods are realised to improve cell performance without modifying the chemical composition of the Cu(In,Ga)Se2 absorption layer.
The novel structure of a solar cell is presented that has the metal–oxide-semiconductor diode at the side wall of the power generation layer. The influence of the field-effect on the recombination of carriers is simulated and the increase of the conversion efficiency of the solar cell by the gate voltage application is discussed. In addition, the relationship between the effect of the gate voltage application on the conversion efficiency, the lifetime and the surface recombination velocity is discussed.
A start-up circuit, used in a micro-power indoor light energy harvesting system, is described. This start-up circuit achieves two goals: first, to produce a reset signal, power-on-reset (POR), for the energy harvesting system, and secondly, to temporarily shunt the output of the photovoltaic (PV) cells, to the output node of the system, which is connected to a capacitor. This capacitor is charged to a suitable value, so that a voltage step-up converter starts operating, thus increasing the output voltage to a larger value than the one provided by the PV cells. A prototype of the circuit was manufactured in a 130 nm CMOS technology, occupying an area of only 0.019 mm2. Experimental results demonstrate the correct operation of the circuit, being able to correctly start-up the system, even when having an input as low as 390 mV using, in this case, an estimated energy of only 5.3 pJ to produce the start-up.
A multi-layered film with a TiO2-based nanotubes/nanoparticles/nanotubes sandwich structure has been developed to increase light-harvesting efficiency by enhancing light scattering. Compared to a double-layered film of nanotubes/nanoparticles, the sandwiched film exhibited greatly improved light-absorption properties. An obviously improved total energy-conversion efficiency of 6.11% was obtained in the sandwiched film, which is 27.3, 46.1 and 213% higher than those of the double-layered film, nanoparticle film and nanotube film, respectively. A possible mechanism for the enhancement of light harvesting in the sandwiched film is proposed, whereby the observed enhancement is owing to effective scattering by the bottom layer and reflection of escaped light by the top layer.
TiO2 spindles with high crystallinity were synthesised by a two-step solvothermal reaction with the aid of diethylamine. Compared with Degussa P25, the dye sensitised solar cell (DSSC) based on a TiO2 spindles photoanode demonstrated superior characteristics including higher affinity to N719 dye, higher light scattering effect than P25, better conductance and longer recombination lifetime. Photovoltaic measurement indicated that the TiO2 spindles-based DSSC possesses higher short-circuit current density (Jsc) and open-circuit voltage (Voc), hence, a 29% higher overall photovoltaic performance (η) than that of P25 was achieved.
Optimum heat treatment processes for carbon nanotubes (CNTs) paste counter electrodes with better electrochemical performance are investigated. Half-cells were fabricated to examine the electrochemical properties of the CNT paste counter electrode. Proposed is a two-step heat treatment process and an optimum sintering temperature for CNT paste counter electrodes.
InGaN pin homojunction solar cells with different In content (x=0.02/0.12/0.15) have been fabricated. The measured open-circuit voltages (Voc) are 2.24, 1.34 and 0.96 V, respectively. All the devices exhibit large fill factors of more than 64% and enhanced response in the short wavelength region, suggesting the high potential of InGaN-based pin homojunction solar cells.