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Photoelectric conversion; solar cells and arrays

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A comparison of the photovoltaic and electroluminescent effects in GaP/Langmuir-Blodgett film diodes
Author(s): M.C. Petty, J. Batey, G.G. Roberts
Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 132, Issue 3, 1985 , p. 133 - 139
Type: Article
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The electrical properties of a series of Au/Langmuir-Blodgett film/n-GaP metal-insulatorsemiconductor diodes are reported. The fabrication of diodes incorporating varying numbers of monolayers on the same GaP substrate has enabled a direct comparison of device properties with insulator thickness to be made. The devices have been operated both as photovoltaic solar cells and as electroluminescent diodes. The Langmuir-Blodgett film thickness required to optimise the electroluminescence efficiency is found to be 21 nm. This corresponds to the insulator thickness at which the short-circuit photocurrent of the solar cell begins to decrease. Results are discussed in terms of a simple energy band diagram for the metal-insulator-semiconductor structure.

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Photovoltaic properties of cadmium-telluride/langmuir-film solar cells
Author(s): G.G. Roberts, M.C. Petty, I.M. Dharmadasa
Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 128, Issue 6, 1981 , p. 197 - 201
Type: Article
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We report the properties of metal-insulator-semiconductor (MIS) solar cells based on n-type CdTe and an anthracene derivative deposited by the Langmuir-Blodgett technique. The incorporation of the organic insulating layer between a gold electrode and the CdTe is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions. The Langmuir-Blodgett deposition technique has allowed us to investigate, in some detail, the dependence of these characteristics on the thickness of the insulating layer. The optimum efficiency of our devices occurs when theorganic film thickness is approximately 2.4nm.

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Cadmium telluride/Langmuir film photovoltaic structures
Author(s): I.M. Dharmadasa, G.G. Roberts, M.C. Petty
Source: Electronics Letters, Volume 16, Issue 6, March 1980, p. 201 - 202
Type: Article
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The electrical properties of Schottky-barrier and Langmuir-film m.i.s. solar cells fabricated on chemically etched CdTe substrates are reported. The Schottky-barrier devices possess ideality factors close to unity and barrier heights of approximately 0.70 eV. Incorporation of one monolayer of a cadmium stearate Langmuir film between the metal electrode and the semiconductor is found to increase both the effective barrier height of the device measured in the dark and also the open-circuit voltage measured under illumination conditions.

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