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Photoelectric conversion; solar cells and arrays

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Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells
Author(s): Phu Minh Lam, Jiang Wu, Sabina Hatch, Dongyoung Kim, Mingchu Tang, Huiyun Liu, James Wilson, Rebecca Allison
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The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is studied. A significant improvement in photoemission, photocurrent density and spectral response was observed with post-growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from 4.9 mA cm−2 for as-grown sample to 5.8 mA cm−2. We assign this enhanced performance to the reduced density of inherent point defects that was formed at the quantum dot (QD) and GaAs barrier. Post-growth thermal annealing of QDSCs is demonstrated as a simple route for achieving improved device performance.

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InAs/GaAs quantum dot solar cells with quantum dots in the base region
Author(s): Shun Chan, Dongyoung Kim, Ana M. Sanchez, Yunyan Zhang, Mingchu Tang, Jiang Wu, Huiyun Liu
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In this work, the influence of quantum dot (QD) position on the performance of solar cells was studied. The presence of QDs within the base regions leads to improved open circuit voltage (V oc) from 0.73 to 0.90 V. Despite a slight reduction in short-circuit current (J sc) due to carrier collection loss, the enhancement of the V oc of QDSCs with QDs in base region is significant enough to ensure that power conversion efficiencies (η) are higher than the reference quantum dot solar cell (QDSC) of which QDs are embedded in the intrinsic region. Moreover, sample with QDs in deep base region achieved the highest η of 9.75%, an increase of 29% with regard to the reference quantum dot solar cell.

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