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Semiconductor doping

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InGaAsP/InP quantum well buried heterostructure waveguides produced by ion implantation
Author(s): J.E. Zucker, K.L. Jones, B. Tell, K. Brown-Goebeler, C.H. Joyner, B.I. Miller, M.G. Young
Source: Electronics Letters, Volume 28, Issue 9, April 1992, p. 853 - 855
Type: Article
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Formation of buried InGaAsP/InP quantum well waveguides by means of phosphorus ion implantation and thermal annealing during regrowth is demonstrated. Absorption spectra of implanted and unimplanted regions are used to estimate the induced index difference, which is of the order of 1% at 1.55 μm. Calculated mode intensities are in good agreement with the observed near field intensity patterns. With this etchless implant technique, we achieve a significant reduction in propagation loss for singlemode pin waveguides relative to etched semi-insulating planar buried heterostructure waveguides fabricated from the same quantum well structure. In addition to reduced scattering loss, buried quantum well waveguides produced by ion implantation are more manufacturable because fewer and less-critical processing steps are involved.

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Effects of etch depth and ion implantation on surface emitting microlasers
Author(s): Y.H. Lee, J.L. Jewell, B. Tell, K.F. Brown-Goebeler, A. Scherer, J.P. Harbison, L.T. Florez
Source: Electronics Letters, Volume 26, Issue 4, February 1990, p. 225 - 227
Type: Article
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We fabricated low threshold In0.2Ga0.8As surface emitting microlasers having various etch depths and sizes. Comparison of electrical and optical properties was made between deep etched (deeper than the active layer) and shallow etched (shallower than the active layer) microlasers. Shallow etched microlasers were F-ion implanted to limit current spreading. The ion implanted shallow etched samples, when larger than about 5 µm across, show improved room temperature CW characteristics with lower resistances and lower operating voltages than the deep etched microlasers.

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