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Semiconductor doping

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  • Physics [1]
  • Fundamental areas of phenomenology [1]
  • Optics [1]
  • Nonlinear optics [1]
  • Optical bistability, multistability and switching [1]
  • Condensed matter: structure, thermal and mechanical properties [1]
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  • 2002 [1]

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Be-doped low-temperature-grown GaAs material for optoelectronic switches
Author(s): A. Krotkus, K. Bertulis, M. Kaminska, K. Korona, A. Wolos, J. Siegert, S. Marcinkevičius, J.-F. Roux, J.-L. Coutaz
Source: IEE Proceedings - Optoelectronics, Volume 149, Issue 3, 2002 , p. 111 - 115
Type: Article
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Structural, electrical and recombination properties of Be-doped low-temperature MBE grown (LTG) GaAs have been investigated by using a number of different experimental techniques. These properties were analysed with respect to the applications of LTG GaAs in ultrafast optoelectronic devices. It has been found that a moderate Be-doping improves the structural quality of the layers and does not affect their semi-insulating behaviour. Electron and hole capture cross-sections, critical parameters for the design of optoelectronic devices from LTG GaAs, equal to σn=1.1×10−13 and σp=1.8×10−15 cm2 were also determined.

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