- Sort by:
- Newest first
- Titles A to Z
Filter by subject:
- Physics [7]
- Condensed matter: structure, thermal and mechanical properties [7]
- Structure of liquids and solids; crystallography [7]
- Defects in crystals [7]
- Doping and implantation of impurities [7]
- Electrical and electronic engineering [7]
- Components, electron devices and materials [7]
- Semiconductor materials and technology [7]
- Semiconductor technology [7]
- Semiconductor doping [7]
- [4]
- http://iet.metastore.ingenta.com/content/subject/a4000,http://iet.metastore.ingenta.com/content/subject/a4200,http://iet.metastore.ingenta.com/content/subject/a4255,http://iet.metastore.ingenta.com/content/subject/a4255p,http://iet.metastore.ingenta.com/content/subject/a7000,http://iet.metastore.ingenta.com/content/subject/a8000,http://iet.metastore.ingenta.com/content/subject/a8100,http://iet.metastore.ingenta.com/content/subject/a8115,http://iet.metastore.ingenta.com/content/subject/b0000,http://iet.metastore.ingenta.com/content/subject/b0500,http://iet.metastore.ingenta.com/content/subject/b2520,http://iet.metastore.ingenta.com/content/subject/b2530,http://iet.metastore.ingenta.com/content/subject/b4300,http://iet.metastore.ingenta.com/content/subject/b4320,http://iet.metastore.ingenta.com/content/subject/b4320j,http://iet.metastore.ingenta.com/content/subject/a4260,http://iet.metastore.ingenta.com/content/subject/a6600,http://iet.metastore.ingenta.com/content/subject/a6630,http://iet.metastore.ingenta.com/content/subject/a6800,http://iet.metastore.ingenta.com/content/subject/a7300,http://iet.metastore.ingenta.com/content/subject/a7340,http://iet.metastore.ingenta.com/content/subject/b0510,http://iet.metastore.ingenta.com/content/subject/b0510d,http://iet.metastore.ingenta.com/content/subject/b2530c,http://iet.metastore.ingenta.com/content/subject/a4260b,http://iet.metastore.ingenta.com/content/subject/a4260d,http://iet.metastore.ingenta.com/content/subject/a4285,http://iet.metastore.ingenta.com/content/subject/a4285d,http://iet.metastore.ingenta.com/content/subject/a6140,http://iet.metastore.ingenta.com/content/subject/a6170a,http://iet.metastore.ingenta.com/content/subject/a6630j,http://iet.metastore.ingenta.com/content/subject/a6855,http://iet.metastore.ingenta.com/content/subject/a6865,http://iet.metastore.ingenta.com/content/subject/a7320,http://iet.metastore.ingenta.com/content/subject/a7320d,http://iet.metastore.ingenta.com/content/subject/a7340c,http://iet.metastore.ingenta.com/content/subject/a7340l,http://iet.metastore.ingenta.com/content/subject/a7800,http://iet.metastore.ingenta.com/content/subject/a7855,http://iet.metastore.ingenta.com/content/subject/a7855d,http://iet.metastore.ingenta.com/content/subject/a7865,http://iet.metastore.ingenta.com/content/subject/a7865j,http://iet.metastore.ingenta.com/content/subject/a8115g,http://iet.metastore.ingenta.com/content/subject/a8115h,http://iet.metastore.ingenta.com/content/subject/a8115n,http://iet.metastore.ingenta.com/content/subject/b0520,http://iet.metastore.ingenta.com/content/subject/b0520f,http://iet.metastore.ingenta.com/content/subject/b2520c,http://iet.metastore.ingenta.com/content/subject/b2520d,http://iet.metastore.ingenta.com/content/subject/b2520f,http://iet.metastore.ingenta.com/content/subject/b2520m,http://iet.metastore.ingenta.com/content/subject/b2530d,http://iet.metastore.ingenta.com/content/subject/b2550a,http://iet.metastore.ingenta.com/content/subject/b2560,http://iet.metastore.ingenta.com/content/subject/b2560b,http://iet.metastore.ingenta.com/content/subject/b4200,http://iet.metastore.ingenta.com/content/subject/b4220,http://iet.metastore.ingenta.com/content/subject/b4320l
- a4000,a4200,a4255,a4255p,a7000,a8000,a8100,a8115,b0000,b0500,b2520,b2530,b4300,b4320,b4320j,a4260,a6600,a6630,a6800,a7300,a7340,b0510,b0510d,b2530c,a4260b,a4260d,a4285,a4285d,a6140,a6170a,a6630j,a6855,a6865,a7320,a7320d,a7340c,a7340l,a7800,a7855,a7855d,a7865,a7865j,a8115g,a8115h,a8115n,b0520,b0520f,b2520c,b2520d,b2520f,b2520m,b2530d,b2550a,b2560,b2560b,b4200,b4220,b4320l
- [3],[3],[3],[3],[3],[3],[3],[3],[3],[3],[3],[3],[3],[3],[3],[2],[2],[2],[2],[2],[2],[2],[2],[2],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1],[1]
- /search/morefacet;jsessionid=11gbwmfhgpltg.x-iet-live-01
- /content/searchconcept;jsessionid=11gbwmfhgpltg.x-iet-live-01?operator4=AND&operator5=AND&operator6=AND&pageSize=20&sortDescending=true&value5=Article&facetNames=pub_year_facet+pub_concept_facet+pub_concept_facet+contentType_facet+pub_concept_facet+pub_concept_facet&value6=b2550&value3=b2500&value4=a6170&option6=pub_concept_facet&value1=b2550b&option5=contentType_facet&value2=1997&facetOptions=2+3+4+5+6+7&option1=pub_concept&option2=pub_year_facet&option3=pub_concept_facet&option4=pub_concept_facet&sortField=prism_publicationDate&operator3=AND&operator2=AND&operator7=AND&option7=pub_concept_facet&value7=
- See more See less
Filter by content type:
- Article [7]
Filter by publication date:
- 1997 [7]
Filter by author:
- A. Mizutani [1]
- A.G. Plyavenek [1]
- A.R. Peaker [1]
- A.V. Lyubarskii [1]
- B.K. Tay [1]
- D.C. Houghton [1]
- E.J. Yoon [1]
- F. Koyama [1]
- J.H. Evans-Freeman [1]
- J.H. Lee [1]
- J.H. Zhao [1]
- K. Iga [1]
- K. Tone [1]
- L.K. Cheah [1]
- M.Q. Huda [1]
- N. Hatori [1]
- N. Nishiyama [1]
- R.P. Sarzała [1]
- S.J. Kim [1]
- S.K. Si [1]
- S.R. Weiner [1]
- ShiXu [1]
- W. Nakwaski [1]
- W.P. Gillin [1]
- Y.B. Moon [1]
- See more See less
The radial carrier diffusion process inside active regions of gain-guided vertical-cavity surface-emitting lasers (VCSELs) is studied rigorously. To this end, a comprehensive three-dimensional self-consistent VCSEL simulation is used. In the modelling, carrier degeneracy as well as temperature and carrier-concentration dependencies of the diffusion coefficient are taken into account. For the room-temperature operation of the GaAs/AlGaAs/AlAs proton-implanted top-surface-emitting VCSELs, ambipolar diffusion coefficient was found to be relatively low (≃ 7.5 cm2/sec) and nearly constant inside the active region but it increases rapidly beyond this region. It is, however, proved that although very accurate VCSEL modelling requires rigorous treatment of the carrier diffusion process, an average constant value of the diffusion coefficient may be undoubtedly used in quite reliable VCSEL simulations.
N-type 6H-SiC wafers have been implanted with C and Al, or Al only, at room temperature or 600°C for a comparative study with the emphasis on determining the dependence of the sheet resistivity and specific contact resistance of Al ohmic contacts on the concentration of implanted Al. The optimum implantation concentration is reported for the first time, along with clear evidence showing the advantage of C-Al co-implantation over Al single implantation.
An alternative approach to deposit ta-C:N films by ion assisted filtered cathodic vacuum arc (IAFCVA) is presented and compared with ta-C films prepared by FCVA under nitrogen partial pressure. The electronic properties are strongly dependent on nitrogen partial pressure for both methods although the efficiency of doping is higher for IAFCVA
SiO2 has been successfully used as the dielectric capping material for bandgap tuning in InGaAs/InP MQW for the first time where the InGaAs cap layer is used simultaneously. The samples showed large blue shifts of bandgap energy after RTA treatment (185 and 230 meV at 750 and 850°C, respectively). Samples with SiO2-InP or SiNx-InGaAs cap layer combinations did not show significant energy shifts.
Sharp, strong luminescence has been obtained from erbium in silicon-germanium quantum well structures. The quantum well layers were implanted with erbium, followed by amorphisation using a silicon implant at 77 K. The structures were then recrystallised by solid phase epitaxial regrowth at 550°C. Compared with bulk silicon systems, stronger erbium activity was observed in the quantum well host.
An InGaAs/GaAs quantum well laser using p-type δ-doping selectively in the barriers has been demonstrated to reduce the threshold current and carrier lifetime. A δ-doping technique is proposed, based on the experimental evidence of high density carbon inclusion during AlAs growth by metal organic chemical vapour deposition (MOCVD). A threshold current density as low as 160 A/cm2, (54 A/cm2/well) has been obtained for three quantum well stripe lasers grown at 1.7 × 1018 cm–3 carbon doping.
A new model that includes the effects of band mixing, strain, space charge, impurity doping, 3D carrier reflections at QW boundaries and intersubband transitions is proposed to determine effective carrier capture time and differential gain in multiquantum-well (MQW) lasers. Results of numerical calculations of these dynamic parameters for 1.3 µm strained InGaAsP/InP MQW lasers are presented.
