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Semiconductor doping

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  • Physics [2]
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MOCVD grown InGaAs/GaAs vertical cavity surface emitting laser on GaAs (311)B substrate
Author(s): A. Mizutani, N. Hatori, N. Nishiyama, F. Koyama, K. Iga
Source: Electronics Letters, Volume 33, Issue 22, October 1997, p. 1877 - 1878
Type: Article
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The authors have realised an InGaAs/GaAs vertical cavity surface emitting laser grown on a GaAs (311)B substrate by metal-organic chemical-vapour deposition. A carbon auto-doping technique was used to avoid the difficulty of p-type doping (>1019 cm–3) AlAs for a distributed Bragg reflector. A low electrical resistance of p-type GaAs/AlAs DBRs on GaAs (311)B was obtained by using delta doping and compositional grading layers. The lowest threshold was 16 mA at room temperature CW operation for a 50 µm diameter device. The threshold current density is 810 A/cm2 which is reasonably low for non-optimised experimental conditions. The polarisation state was stable.

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Threshold reduction of p-type δ-doped InGaAs/GaAs quantum well lasers by using auto-doping of carbon
Author(s): N. Hatori, A. Mizutani, N. Nishiyama, F. Koyama, K. Iga
Source: Electronics Letters, Volume 33, Issue 12, June 1997, p. 1096 - 1097
Type: Article
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An InGaAs/GaAs quantum well laser using p-type δ-doping selectively in the barriers has been demonstrated to reduce the threshold current and carrier lifetime. A δ-doping technique is proposed, based on the experimental evidence of high density carbon inclusion during AlAs growth by metal organic chemical vapour deposition (MOCVD). A threshold current density as low as 160 A/cm2, (54 A/cm2/well) has been obtained for three quantum well stripe lasers grown at 1.7 × 1018 cm–3 carbon doping.

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