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  • Electrical and electronic engineering [2]
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Floating body gate cell with fast write speed for embedded memory applications
Author(s): Weiwei He, Jing Chen, Qingqing Wu, Jiexin Luo, Zhan Chai, Jianqiang Huang, Xi Wang
Source: Electronics Letters, Volume 52, Issue 12, June 2016, p. 1011 - 1013
Type: Article
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Novel two-transistor embedded memory – floating body gate cell – is implemented on planar SOI CMOS technology without adding extra masks. Since channel current is designed for memory cell write operations, this cell demonstrates ultra-fast write speed which is comparable with static RAM cell. The decoupled write and read structure ensures small operation power consumption and avoid false read. The low operation voltages of this cell lead to the excellent endurance performance. In addition, retention time is greatly enhanced due to the gate-to-drain underlap design.

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SRAM cell with asymmetric pass-gate nMOSFETs for embedded memory applications
Author(s): Weiwei He, Jing Chen, Jiexin Luo, Zhan Chai, Xi Wang
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Type: Article
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A novel asymmetric static RAM (SRAM) cell is fabricated on planar silicon-on-insulator CMOS technology, in which pass-gate (PG) transistors are asymmetric. Since lightly doped drain structure of PG transistors use only gate-to-source, this cell improves read stability by 43% when compared with the conventional SRAM 6T symmetric cell. Additionally, cell-leakage current reduces by 24% also due to the PG transistor gate-to-drain underlap design. Although it needs more current to write data to storage node, but no more voltage is needed based on measurements. The novel cell is still suitable for embedded memory.

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