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Semiconductor doping

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  • Physics [1]
  • Fundamental areas of phenomenology [1]
  • Optics [1]
  • Lasing processes [1]
  • Lasing action in semiconductors [1]
  • Condensed matter: structure, thermal and mechanical properties [1]
  • Structure of liquids and solids; crystallography [1]
  • Defects in crystals [1]
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  • 1996 [1]

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Dependence of threshold current density, carrier lifetime and optical gain coefficient on donor concentration in 1.3 µm n-type modulation-doped strained multiquantum well lasers
Author(s): K. Nakahara, K. Uomi, T. Tsuchiya, A. Niwa
Source: Electronics Letters, Volume 32, Issue 13, June 1996, p. 1200 - 1202
Type: Article
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The dependence of lasing properties on the donor concentration is experimentally investigated for 1.3 µm n-type modulation-doped (MD) strained multiquantum well (MQW) lasers. The threshold current density has a minimum at a donor concentration of 3 × 1018 cm-3; the carrier lifetime and the optical gain coefficient decrease with the donor concentration. The turn-on delay time of 100 ps can be expected at 85°C when the MD-MQW structure is applied to a low-leakage buried heterostructure laser.

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