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Photoelectric conversion; solar cells and arrays

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Fabrication methods for performance improvement of Cu(In,Ga)Se2 thin film solar cells
Author(s): P.H. Choi, D.H. Baek, H.J. Kim, K.S. Kim, H.S. Park, S.S. Kim, B.D. Choi
Source: Electronics Letters, Volume 49, Issue 24, November 2013, p. 1561 - 1562
Type: Article
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Two advanced fabrication methods are introduced: the hydrogen peroxide (H2O2)-added chemical bath deposition technique and molybdenum (Mo) back-contact formation under 3 kW sputter power. The parameters of the short circuit current density (J SC) and conversion efficiency (η) were improved over standard cells when the ZnS buffer layer was deposited in the H2O2-added chemical solution. Otherwise, the fill-factor and η were best at 3 kW Mo sputtering power conditions. Advanced fabrication methods are realised to improve cell performance without modifying the chemical composition of the Cu(In,Ga)Se2 absorption layer.

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Localised back contact to ONO passivated c-Si solar cells using laser fired contact method
Author(s): P.H. Choi, D.H. Baek, H.J. Kim, K.S. Kim, H.S. Park, J.H. Lee, J.S. Yi, B.D. Choi
Source: Electronics Letters, Volume 49, Issue 4, February 2013, p. 290 - 291
Type: Article
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The localised back contact method for SiO2/SiNx/SiO2 (ONO) back surface passivated crystalline silicon solar cells has been investigated using a 1064 nm Nd:YAG laser. From the quasi-steady-state-photoconductance measurements, feasible passivation properties of effective carrier lifetime (τeff), back surface recombination velocity (Seff) and diffusion length (LD) with the ONO passivated layer rather than with the SiNx single layer have been confirmed. Localised point back contacts were formed varying with dot diameter and dot spacing and then the cell performance was characterised from solar simulator measurements. It was confirmed that the cell performance is closely related to the back contact area which is determined by dot diameter and spacing, and dot spacing is the more crucial factor to determine the cell performance than diameter variations.

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