http://iet.metastore.ingenta.com
1887

Photoelectric conversion; solar cells and arrays

More general concepts than this:

1-2 of 2 results

Filter by subject:

< Any subject

  • Physics [2]
  • Cross-disciplinary physics and related areas of science and technology [2]
  • Energy research and environmental science [2]
  • Energy conversion [2]
  • Photoelectric conversion; solar cells and arrays [2]
  • Electrical and electronic engineering [2]
  • Components, electron devices and materials [2]
  • Semiconductor materials and technology [2]
  • Semiconductor junctions and interfaces [2]
  • Metal-insulator-semiconductor structures [2]
  • See more See less

Filter by content type:

< Any content type

  • Article [2]

Filter by publication date:

< Any publication date

  • 1980 [2]

Filter by author:

< Any author

  • O.M. Nielsen [2]
Current mechanism of tunnel m.i.s. solar cells
Author(s): O.M. Nielsen
Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 6, 1980 , p. 301 - 307
Type: Article
+ Show details - Hide details

Dark current/voltage characteristics have been examined as a function of temperature for two structures of A1-pSi m.i.s. solar cells. The solar cells have been prepared with interfacial oxide thickness ranging from 10 Å to 20 Å. The results show that the diode saturation current Jo for all oxide thicknesses behave as a majority-carrier current, highly dependent on the effective metal-to-semiconductor barrier height øms and the oxide-tunnel exponent X1/2δ. From the illuminated current/voltage characteristics the sum of øms and (KT/q)X1/2δ is found to be in the range of 730–1025 mV, increasing with increasing oxide thicknessand acceptor concentration.

Add to favourites
Export citations
Required minimum value of barrier height in minority-carrier m.i.s. solar cells
Author(s): O.M. Nielsen
Source: IEE Proceedings I (Solid-State and Electron Devices), Volume 127, Issue 3, 1980 , p. 105 - 108
Type: Article
+ Show details - Hide details

The saturation currents of minority-and majority-carrier m.i.s. solar cells have been compared to find the value of the barrier height ϕ′ms, where the dominating saturation current changes from a majority-carrier current to a minority-carrier current. For an interfacial oxide layer of 20 Å, the value ofϕ′ms has been calculated to be in the range 750-800 mV, whereas for an oxide layer of 10 Å, ϕ′ms, is found to be about 900-950 mV.

Add to favourites
Export citations
Items per page 20 | 50 | 100
Print this page
This is a required field
Please enter a valid email address