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Radiation effects (semiconductor technology)

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  • 2000 [1]

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High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation
Author(s): H. Maher, D.W. DiSanto, M.W. Dvorak, G. Soerensen, C.R. Bolognesi, J.A. Bardwell, H. Tang, J.B. Webb
Source: Electronics Letters, Volume 36, Issue 23, November 2000, p. 1969 - 1971
Type: Article
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The authors demonstrate high-performance AlGaN/GaN heterostructure field-effect transistors (HFETs) with mesa isolation achieved by a recently developed UV-assisted, batch processing compatible, wet etching process. HFETs with a 0.2 µm gate feature peak cutoff frequencies of fT = 43 GHz and fMAX = 98 GHz for a piezoelectric HFET grown on a sapphire substrate by molecular beam epitaxy. The transistors feature low gate diode leakage currents and display no sensitivity to visible light.

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