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Semiconductor doping

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  • Physics [1]
  • Condensed matter: structure, thermal and mechanical properties [1]
  • Structure of liquids and solids; crystallography [1]
  • Defects in crystals [1]
  • Doping and implantation of impurities [1]
  • Condensed matter: electronic structure, electrical, magnetic, and optical properties [1]
  • Electronic structure and electrical properties of surfaces, interfaces, and thin films [1]
  • Electrical and electronic properties of interfaces [1]
  • Contact resistance, contact potential, and work functions [1]
  • Electrical properties of metal-nonmetal contacts [1]
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  • 2001 [1]

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Nickel ohmic contacts to p- and n-type 4H-SiC
Author(s): L.G. Fursin, J.H. Zhao, M. Weiner
Source: Electronics Letters, Volume 37, Issue 17, August 2001, p. 1092 - 1093
Type: Article
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The first demonstration of Ni ohmic contacts to both p+ and n+ 4H-SiC formed by ion implantation is reported. Sample preparation conditions are described and experimental results presented. Specific contact resistances in the range of 10-4 Ωcm2 and 10-6 Ωcm2 for p+ and n+ 4H-SiC, respectively, have been determined by the transfer length method.

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