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Semiconductor doping

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  • A. Jaouad [1]
  • V. Aimez [1]
  • Ç. Aktik [1]
GaAs passivation by low-frequency plasma-enhanced chemical vapour deposition of silicon nitride
Author(s): A. Jaouad, V. Aimez, Ç. Aktik
Source: Electronics Letters, Volume 40, Issue 16, August 2004, p. 1024 - 1026
Type: Article
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Passivation of GaAs by silicon nitride (SixNy) deposition using low-frequency PECVD (LF PECVD) is presented. The high amount of hydrogen implantation during this process enhances the passivation effect, demonstrating for the first time the unpinning of the Fermi level by a simple deposition of SixNy on a deoxidised GaAs surface. The (NH4)2S/SixNy passivation is also simplified, and MIS capacitors are fabricated by a novel process, which consists in exposing the GaAs surface directly to sulphur solution, without the usual deoxidation etching step, followed by the deposition of LF PECVD SixNy. Good modulation of the surface potential is observed, and the interface state density (Dit) as measured from 1 MHz C–V characteristics has a minimum of 3×1011 cm−2 eV−1.

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