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Photoelectric conversion; solar cells and arrays

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  • Physics [1]
  • Condensed matter: structure, thermal and mechanical properties [1]
  • Structure of liquids and solids; crystallography [1]
  • Defects in crystals [1]
  • Annealing processes [1]
  • Other point defects [1]
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  • Dongyoung Kim [1]
  • Huiyun Liu [1]
  • James Wilson [1]
  • Jiang Wu [1]
  • Mingchu Tang [1]
  • Phu Minh Lam [1]
  • Rebecca Allison [1]
  • Sabina Hatch [1]
Effect of rapid thermal annealing on InAs/GaAs quantum dot solar cells
Author(s): Phu Minh Lam, Jiang Wu, Sabina Hatch, Dongyoung Kim, Mingchu Tang, Huiyun Liu, James Wilson, Rebecca Allison
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The effect of post-growth annealing on InAs/GaAs quantum dot solar cells (QDSCs) is studied. A significant improvement in photoemission, photocurrent density and spectral response was observed with post-growth annealing. The optimal anneal temperature was found to be 700°C, which lead to an 18% improvement in current density from 4.9 mA cm−2 for as-grown sample to 5.8 mA cm−2. We assign this enhanced performance to the reduced density of inherent point defects that was formed at the quantum dot (QD) and GaAs barrier. Post-growth thermal annealing of QDSCs is demonstrated as a simple route for achieving improved device performance.

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