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High-power (>80 mW) and high-efficiency (>30%) 1.3 µm super-luminescent diodes (SLDs) are reported. The use of a longer cavity allows the building of an SLD the power and efficiency of which exceed those of a laser diode (LD). The cavity length dependence of power, efficiency and bandwidth, and the power and efficiency comparison with an LD, are examined.
The UV-LED controlled phase shifter of an RF signal based on a GaN-sapphire surface-acoustic-wave (SAW) filter has been implemented. At the optical wavelength 298 nm and SAW frequency 307 MHz, the UV-induced relative change in SAW velocity per unit optical power density is 2×10−6 (µW/mm2)−1 corresponding to 3.7° phase shift. The phase modulation of an RF signal by rectangular UV pulses has been demonstrated. The efficiency of the phase shifter can be considerably improved by proper selection of sheet-resistivity of the GaN layer.
Localised optical emission spectra have been obtained from AlGaInP light emitting devices measured across the surface of the LED from the p-contact to the perimeter under DC operation. Shifts in the peak wavelength of the spectral emission were observed that correspond to a non-uniform temperature distribution, providing direct evidence that heat generation occurs locally in the active region around the central p-contact. This effect becomes more apparent with less conductive current spreading layers as a result of current crowding around the p-contact. Devices with current spreading layers of lower sheet resistance were also found to operate with better thermal management since their injection current density is more uniformly spread in the active region.
A 600 dots per inch LED array chip integrated with Si drivers using a three-dimensional epitaxial thin-film bonding has been developed. Performance tests showed high emitted light power (47 µW at an LED current of 1 mA) with smaller variations (±7%), and long lifetime. Test results provide good enough characteristics to use the LED array chip in a high-printing-speed LED printer printhead.
Light emission profiles from AlGaInP LEDs are compared with those obtained via Monte-Carlo simulation and a lossy transmission line model. Results show good agreement for devices with thin current spreading layers. However, for thicker layers, geometric effects dominate the output profile, resulting in discrepancies between experimental data and the transmission line model. The simulation of emission profiles confirms this discrepancy, caused by light escaping from below the p-contact.
Diamond-like carbon (DLC) layers with thickness of 1.5 nm were incorporated, by pulsed laser deposition technique, in organic light emitting diodes (OLEDs), which consisted of a single light-emitting layer of polystyrene (PS) as the host material, but co-doped with N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD) and Tris-(8-hydroxyquinoline)-Aluminium (Alq3). For unstable ITO/doped-PS/Al OLEDs, which easily failed with poor light emission when the doped-PS layer used was too thin, the insertion of DLC in the ITO/doped-PS/DLC/Al structure restored the device operation to maximum operating voltage and hence full brightness.
In this paper the characterization of the bandwidth of a bidirectional link, using a light emitting diode as both a transmitter and a detector, is reported. The initial characterizations of the LED as both source and photodiode are described. The bandwidth characterizations of the LED are also discussed.
The paper examines various methods to excite LEDs using switched-mode power converters. Examples based on flyback converter are used to illustrate methods of power connection to LEDs. One of them is integrated to coupled-inductor that is new for LEDs excitation. Using the converter methods, the dimming control can be easily regulated. The reliability and illumination formulation has been developed for the LED lighting in automotive environment. (6 pages)
