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Ferroelectric devices

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  • Electrical and electronic engineering [3]
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Operation of single transistor type ferroelectric random access memory
Author(s): S.I. Shim, S.-I. Kim, Y.T. Kim, J.H. Park
Source: Electronics Letters, Volume 40, Issue 22, October 2004, p. 1397 - 1398
Type: Article
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Verification was sought for the memory operation of a single transistor type ferroelectric random access memory (1T type FeRAM) with a circuit model for a memory cell transistor combined with a precharged capacitive decoupling sensing scheme. The wiring scheme of the 1T type FeRAM array was also proposed based on the operation of the fabricated memory cell transistor. As a result, the memory operation of 1T type FeRAM was confirmed at a low current level with high sensing speed and no reference cell, and the design and verification of the full chip were achieved.

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High-performance low-cost phase-shifter design based on ferroelectric materials technology
Author(s): W. Kim, M.F. Iskander, C. Tanaka
Source: Electronics Letters, Volume 40, Issue 21, October 2004, p. 1345 - 1347
Type: Article
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A novel approach to ferroelectric phase-shifter design using BaxSr1-xTiO3 (BSTO) films in a multilayer dielectric coplanar waveguide structure is described. By including a low-loss dielectric layer (SiO2) between the coplanar waveguide conductors and a layer of ferroelectric materials, significant reduction in insertion loss can be achieved in conjunction with a threefold increase in figure of merit (°/dB).

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Nonvolatile current-sensing device in all-oxide Pb(Zr,Ti)O3/BaRuO3 structure
Author(s): S.-M. Koo, M.-S. Lee, B.M. Moon
Source: Electronics Letters, Volume 40, Issue 17, August 2004, p. 1088 - 1089
Type: Article
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A nonvolatile current sensing device using Pb(Zr0.52,Ti0.48)O3 (PZT) as a gate and BaRuO3 (BRO) as a thin film channel is demonstrated. A nonvolatile change of 33% in the sheet resistance of BRO has been observed as the polarisation of the ferroelectric PZT layer is reversed. This change was nonvolatile after 24 h and the conductivity measurements between 80 and 300 K revealed that the BRO layer shows n-type conduction. The BRO channel is compatible with PZT process and the all-oxide structure offers the possibility of nonvolatile, current-sensing memory devices.

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