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Ferroelectric devices

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Al:ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors
Author(s): Y. Takada, N. Okamoto, T. Saito, K. Kondo, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima
Source: Electronics Letters, Volume 52, Issue 3, February 2016, p. 230 - 232
Type: Article
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Ferroelectric (Pb,La)(Zr,Ti)O3 capacitors were fabricated using chemical solution deposition with Al:ZnO (AZO) top electrodes that were deposited using pulsed laser deposition (PLD), where the oxygen pressure was varied systematically. The oxygen pressure during deposition of the AZO layer affected the surface morphology of the AZO top electrodes, as well as the ferroelectric properties of the capacitors. As the oxygen pressure increased, the AZO grains gradually appeared clearer in the SEM images, indicating less dense stacking, and the polarisation–voltage hysteresis loops expanded horizontally. The largest values of remnant polarisation and coercive voltage were obtained at 10 Pa. Appropriate ferroelectric properties were obtained for oxygen pressures in the range of 0.5–2.0 Pa. The hydrogen degradation resistance during annealing in 3% H2 200°C and 1 Torr was independent of oxygen pressure during PLD.

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Fabrication of doped Pb(Zr,Ti)O3 capacitors on Pt substrates with different orientations
Author(s): R. Tamano, T. Amano, Y. Takada, N. Okamoto, T. Saito, T. Yoshimura, N. Fujimura, K. Higuchi, A. Kitajima
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Type: Article
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The effects of crystallographic orientation on the ferroelectric properties of Pb(Zr,Ti)O3 (PZT) thin films grown on (111) and (100)-oriented Pt substrates are investigated. The effects of doping PZT with species X (forming PXZT) thin films (Pb:X:Zr:Ti, 113:3:30:70; X = La, Nb, or Y) using chemical solution deposition were studied. The crystallinity of all PXZT films was almost identical. The remnant polarisation of the un-doped, La-, Nb-, and Y-doped PZT capacitors with Pt(111) bottom electrodes were 133.4, 64.7, 60.2, and 98.4 µC/cm2, respectively. In ferroelectric capacitors with Pt(100) bottom electrodes, the remnant polarisations were 185.6, 148.1, 103.1, and 135.7 µC/cm2, respectively. The remnant polarisation was larger with Pt(100) than with Pt(111). The initial remnant polarisation of the un-doped PZT capacitors was larger than that of PXZT.

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