The Journal of Engineering
Volume 2013, Issue 9, September 2013
Volumes & issues:
Volume 2013, Issue 9
September 2013
Collection probability with discrete random signal-to-interference power ratios in multiple interferences for electronic intelligence receivers
- Author(s): Ric A. Romero ; Tri T. Ha ; Stylianos Lioulis
- Source: The Journal of Engineering, Volume 2013, Issue 9, p. 23 –30
- DOI: 10.1049/joe.2013.0035
- Type: Article
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In certain applications, signal transmit power is adjusted in discrete levels. Moreover, interference powers themselves can be discretely random. For electronic intelligence applications, the authors refer to the signal to be collected as signal of interest (SoI). Thus, for a passive receiver, the resulting instantaneous SoI-to-interference power ratio (SIR) in multiple interferences is a discrete random variable. This means signal detection or collection is not guaranteed. They proposed collection probability (CP) as a metric when the SIR is random. In this study, the authors evaluate CP probabilistically and show CP against SIR threshold degradation and/or improvement as a function of increasing number of interferences, increasing signal power range and increasing distribution gain.
Harmonic performance of heat-pumps
- Author(s): W.J.B. Heffernan ; N.R. Watson ; R. Buehler ; J.D. Watson
- Source: The Journal of Engineering, Volume 2013, Issue 9, p. 31 –44
- DOI: 10.1049/joe.2013.0012
- Type: Article
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Reverse cycle air-source heat-pumps are an increasingly significant load in New Zealand and in many other countries. This has raised concern over the possible impact wide-spread use of heat-pumps will have on the grid. To analyse this impact, models are needed to enable system studies to be performed. In this paper, the results from testing six heat-pumps are presented. The heat-pumps are classified based on observed performance. Moreover, the heat-pumps’ designs are investigated and power system computer aided design/electromagnetic transient program for DC (PSCAD/EMTDC) models developed and verified against the measured performance.
Polarisation analysing complementary metal-oxide semiconductor image sensor in 65-nm standard CMOS technology
- Author(s): N. Wakama ; D. Okabayashi ; T. Noda ; K. Sasagawa ; T. Tokuda ; K. Kakiuchi ; J. Ohta
- Source: The Journal of Engineering, Volume 2013, Issue 9, p. 45 –47
- DOI: 10.1049/joe.2013.0033
- Type: Article
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In the present study, the authors demonstrate a complementary metal-oxide semiconductor (CMOS) image sensor implemented with on-chip polarisers using 65-nm standard CMOS technology. The polariser is composed of metal wire grids made of metal wires fabricated by the CMOS process. An extinction ratio of 18.8 dB was obtained for a single pixel with an on-chip polariser, where the line/space widths have the finest pitch obtainable by 65-nm technology. Electrical crosstalk between pixels is reduced by over 25% using a guard ring structure. Polarisation imaging by the sensor was also performed.
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