IEE Proceedings - Optoelectronics
Volume 153, Issue 6, December 2006
Volumes & issues:
Volume 153, Issue 6
December 2006
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- Author(s): P. Smowton
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, page: 275 –275
- DOI: 10.1049/ip-opt:20069027
- Type: Article
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- Author(s): N. Dupuis ; J. Decobert ; P.Y. Lagrée ; N. Lagay ; C. Cuisin ; F. Poingt ; A. Ramdane ; C. Kazmierski
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 276 –279
- DOI: 10.1049/ip-opt:20060049
- Type: Article
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Thickness and composition profiles of AlGaInAs-based layers grown by low-pressure metal organic vapour phase epitaxy in the regime of selective area growth (SAG) have been modelled and measured experimentally. Experimental thickness profiles of InP, GaAs and GaAlAs bulk layers grown in the SAG regime have been precisely fitted with a three-dimensional vapour phase-diffusion model, and the characteristic diffusion length coefficient (D/k) for In, Ga and Al extracted. The D/k diffusion parameter for aluminium has been calculated and found intermediate between the indium and gallium ones. The diffusion model predict both thickness and compositional variations of AlGaInAs layers selectively grown for different mask patterns. The excellent agreement obtained between calculated and measured profiles makes this modelling tool essential for engineering of future SAG integrated optical devices. - Author(s): C.Y. Jin ; H.Y. Liu ; T.J. Badcock ; K.M. Groom ; M. Gutiérrez ; R. Royce ; M. Hopkinson ; D.J. Mowbray
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 280 –283
- DOI: 10.1049/ip-opt:20060048
- Type: Article
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A high-growth-temperature GaAs spacer layer (HGTSL) is shown to significantly improve the performance of 1.3 µm multilayer InAs/GaAs quantum-dot (QD) lasers. The HGTSL inhibits threading dislocation formation, resulting in enhanced electrical and optical characteristics and hence improved performance of QD lasers. To further reduce the threshold current density and improve the room-temperature characteristic temperature (T0), the high-reflection (HR) coating and p-type modulation doping have been incorporated with the HGTSL technique. A very low continuous-wave room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A cm−2 are achieved for a three-layer device with a 1 mm HR/HR cavity, while a very low threshold current density of 48 A cm−2 and a negative T0 are achieved in the p-doped lasers. - Author(s): K.A. Shore and D.M. Kane
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 284 –286
- DOI: 10.1049/ip-opt:20060035
- Type: Article
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A direct means for determining the optimum frequency modulation frequency for enhanced frequency-shifted feedback laser ranging is reported. - Author(s): C.A. Evans ; V.D. Jovanović ; D. Indjin ; Z. Ikonić ; P. Harrison
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 287 –292
- DOI: 10.1049/ip-opt:20060039
- Type: Article
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A quantum-cascade laser (QCL) thermal model is presented. On the basis of a finite-difference approach, the model is used in conjunction with a self-consistent carrier transport model to calculate the temperature distribution in a near-infrared InGaAs/AlAsSb QCL. The presented model is used to investigate the effects of driving conditions and device geometries on the active-region temperature, which has a major influence on the device performance. A buried heterostructure combined with epilayer-down mounting is found to offer the best performance compared with alternative structures and has thermal time constants up to eight times smaller. The presented model provides a valuable tool for understanding the thermal dynamics inside a QCL and will help to improve operating temperatures. - Author(s): S. Tomić
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 293 –298
- DOI: 10.1049/ip-opt:20060030
- Type: Article
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A theoretical study of the electronic and optical properties of the dilute-nitrogen InGaAsN/GaAs quantum dot (QD) structures is presented. The calculations are based on a 10 band k · p band-anti-crossing Hamiltonian incorporating valence, conduction and nitrogen-induced bands. Numerical results for the model system of capped pyramid-shaped QD with [1 0 1] facets on a thin wetting layer are presented. The analysis shows that the influence of nitrogen induces more confined states in the conduction band (CB) than in equivalent nitrogen-free QDs, reducing the energy of the fundamental optical transition. The better confinement in dilute nitrogen QD is because of both the significantly reduced compressive strain, which was one of the major obstacles for a long-wavelength emission from InAs/GaAs QDs, and the BAC effect. These effects, in conjunction with QD size variation, can be of great benefit for the design of devices emitting at longer wavelengths. Furthermore, in contrast to nitrogen-free QDs, dilute nitrogen QDs exhibit reduced dipole matrix element and larger Coulomb interaction energy. The findings are in good agreement with the reported experimental results on similar structures. With appropriate tailoring of the indium and nitrogen concentration, this system could be a potential candidate for a 1.55 µm emission on GaAs substrate. - Author(s): P.J. Bream ; S. Sujecki ; E.C. Larkins
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 299 –307
- DOI: 10.1049/ip-opt:20060038
- Type: Article
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A dynamic quantum well (QW) gain model is presented, which is used to investigate non-equilibrium steady-state gain in a QW, under CW electrical and optical excitations. Intrasubband, intersubband and interband carrier–carrier and carrier–phonon scattering processes are distinguished. Carrier capture/escape is modelled as a carrier–carrier scattering process and includes the solution of Poisson's equation, such that deviations from QW charge neutrality lead to a modification of the capture rate through band bending. Radiative transitions are modelled using a Fermi's Golden Rule approach. Carrier–carrier scattering is described using the standard relaxation rate approximation. A different approach is adopted for carrier–phonon interactions to account for the carrier kinetic energy thresholds, which exist for intrasubband and intersubband carrier–phonon scattering by phonon emission and absorption. Results show that significant non-equilibrium conditions exist, even in the absence of stimulated emission, and have implications for the use of thermal equilibrium carrier distributions in full laser diode simulation tools. - Author(s): K. Veselinov ; F. Grillot ; A. Bekiarski ; S. Loualiche
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 308 –311
- DOI: 10.1049/ip-opt:20060043
- Type: Article
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Numerical models based on rate equations are used to study carrier dynamics in the two lowest energy levels of an InAs/InP (113)B quantum dot (QD) system. Two different theories are presented, one based on a cascade-relaxation model and the other using an additional efficient carrier relaxation. The comparison between these two theoretical approaches leads to a qualitative understanding of the origin of the two-state lasing in 1.55 µm InAs/InP (113)B (QD) lasers. In order to investigate the QD laser dynamics, numerical results for the turn-on delay of the double laser emission are also presented and discussed. - Author(s): T.N. Le ; M.R. Hofmann ; A. Klehr ; G. Erbert
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 312 –315
- DOI: 10.1049/ip-opt:20060045
- Type: Article
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p.
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Passive and hybrid modelocking of a two-section laser diode in an external cavity is investigated. The cavity contains a Fourier transformation that enables spatial separation and individual manipulation of the spectral components for shaping of the pulse spectrum. We achieve 5.5 ps pulses with passive modelocking and strongly chirped 3.7 ps pulses with hybrid modelocking. - Author(s): I.C. Sandall ; C.L. Walker ; P.M. Smowton ; D.J. Mowbray ; H.Y. Liu ; M. Hopkinson
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 316 –320
- DOI: 10.1049/ip-opt:20060042
- Type: Article
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The segmented contact method is used to study the performance of intrinsic and p-doped quantum dot structures emitting at 1.3 µm. From measurements of the absorption, it is shown that despite being doped to a level of 18 acceptor atoms per dot, only 19% of the quantum dot states are filled by excess holes, illustrating the importance of the continuum states in the wetting layer. We directly measure the modal gain and non-radiative recombination and show that the modal gain is increased as a function of transparency point when p-dopants are introduced without a significant increase in non-radiative recombination. These results explain the 65% reduction in threshold current observed for uncoated 1500 µm long devices at 300 K. - Author(s): S.N. Elliott ; P.M. Smowton ; G. Berry
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 321 –325
- DOI: 10.1049/ip-opt:20060050
- Type: Article
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p.
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The use of expanded mode layers in lasers designed for DVD read/write applications is investigated and their performance is compared with that of a more conventional structure. The expanded mode design achieves a higher confinement factor and hence much lower threshold currents than the conventional structure, for the same measured vertical farfield divergence of 18°. T0 is increased from 51 to 65 K (20–70°C) for the expanded mode structure for 320-µm long devices with uncoated facets. It is also found that zinc or magnesium can be used interchangeably for the p-dopant in a given structure without any impact on device performance. - Author(s): A.L. Ivanov ; N.I. Nikolaev ; K. Cho
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 326 –329
- DOI: 10.1049/ip-opt:20060046
- Type: Article
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The optical properties of microcavity (MC) polaritons parametrically driven by a surface acoustic wave (SAW) is analysed. In this case, the resonant acousto-optic nonlinearity gives rise to a very short ‘light–acoustic wave’ interaction length even for rather modest acoustic intensities. This can effectively be used for possible device applications. Two schemes ‘SAW pumping–optical probing’ are proposed for semiconductor MCs: one deals with the use of bulk incoming/outgoing photons, which resonantly couple with MC polaritons through a top distributed Bragg reflector, and another involves in-plane light delivered to and collected from the lateral surfaces of a MC chip. - Author(s): D.R. Jones ; P. Rees ; I. Pierce
- Source: IEE Proceedings - Optoelectronics, Volume 153, Issue 6, p. 330 –337
- DOI: 10.1049/ip-opt:20060051
- Type: Article
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Self-pulsating laser diodes operating at 420 nm are required in high-density optical storage devices. By growing saturable absorbing quantum wells in the p-doped cladding layer, of a semiconductor laser, it is possible to obtain the interplay between gain and absorption, which is required for pulsation. The dynamics of self-pulsating InGaN laser diodes are investigated to gain an insight into how the quantum-well configuration in the absorber and the cavity length affect the laser output. In particular, the work shows how a carefully designed structure gives rise to stable self-pulsation up to a temperature of 100°C while offering high powered emission at low operating currents. As a result, such blue-emitting laser diodes are highly desirable for use within next-generation optical storage devices.
Editorial: Semiconductor and Integrated Optoelectronics (SIOE) Conference 2006
AlGaInAs selective area growth by LP-MOVPE: experimental characterisation and predictive modelling
High-performance 1.3 µm InAs/GaAs quantum-dot lasers with low threshold current and negative characteristic temperature
Optimum modulation frequency for FM seeded FSF laser ranging
Thermal effects in InGaAs/AlAsSb quantum-cascade lasers
Electronic and optical properties of dilute nitrogen quantum dots
Investigation of non-equilibrium steady-state gain in semiconductor quantum wells
Modelling of the two-state lasing and the turn-on delay in 1.55 µm InAs/InP (113)B quantum dot lasers
Hybrid and passive mode-locking of a two-section laser diode in a Fourier transform external cavity
Measurement of modal absorption, gain and recombination in p-doped and intrinsic quantum dot structures
Optimisation of high power AlGaInP laser diodes for optical storage applications
SAW-driven optical microcavities for device applications
Theoretical investigation of InGaN self-pulsating laser diodes for optical storage applications
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