IEE Proceedings - Optoelectronics
Volume 150, Issue 4, August 2003
Volumes & issues:
Volume 150, Issue 4
August 2003
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- Author(s): S. Haywood
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, page: 281 –281
- DOI: 10.1049/ip-opt:20030871
- Type: Article
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- Author(s): S. Anders ; W. Schrenk ; C. Pflügl ; E. Gornik ; G. Strasser ; C. Becker ; C. Sirtori
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 282 –283
- DOI: 10.1049/ip-opt:20030720
- Type: Article
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The performance of a GaAs-based superlattice quantum cascade laser is reported. Both the maximum operating temperature, 95 °C, and the peak power output, 300 mW at room temperature, exceed previous records of GaAs-based quantum cascade lasers. Various types of cavities were explored: conventional Fabry Perot cavities for maximum power output, narrow cavities for improved cooling, cylindrical cavities for potentially low threshold and single-mode distributed-feedback lasers for applications in spectroscopy. - Author(s): G. Scarpa ; N. Ulbrich ; G. Böhm ; G. Abstreiter ; M.-C. Amann
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 284 –287
- DOI: 10.1049/ip-opt:20030787
- Type: Article
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Plasmon-enhanced GaInAs-waveguides have been successfully employed for the fabrication of 5.5 µm GaInAs/AlInAs strain-compensated quantum cascade lasers using solid-source molecular beam epitaxy (MBE). The low-loss waveguide design combined with the high injection efficiency of the band-structure results in a very high operating temperature of the devices. Laser action for a 2.7 mm long and 22 µm wide device with uncoated facets was achieved in pulsed mode up to a temperature of 450 K. The measured value of the waveguide loss at room-temperature is 7cm-1. The observed temperature dependence of the waveguide loss is explained by means of the thermal behaviour of the electron mobility. - Author(s): J.L. Bradshaw ; J.D. Bruno ; J.T. Pham ; D.E. Wortman ; S. Zhang ; S.R.J. Brueck
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 288 –292
- DOI: 10.1049/ip-opt:20030613
- Type: Article
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A distributed-feedback, type-II interband cascade laser is demonstrated in pulsed mode, emitting near 3.145 µm at temperatures between 50 and 80 K. Feedback is provided by a surface-etched grating formed using interferometric lithography. Between 50 and 80 K, the device's single longitudinal mode red-shifts with temperature at ∼0.1 nm/K. At 70 K and 190 mA of pulsed injection current, side-mode suppression exceeds 30 dB. The characteristics of related Fabry–Perot IC lasers are also described and contrasted with those of the distributed feedback device. - Author(s): D. Westerfeld ; S. Suchalkin ; M. Kisin ; G. Belenky ; J. Bruno ; R. Tober
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 293 –297
- DOI: 10.1049/ip-opt:20030539
- Type: Article
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The optical gain and loss of lasers operating over the wavelength range of 3.4 to 3.6 µm were measured using the Hakki–Paoli technique. The optical loss was found to increase with increasing temperature, from 38cm-1 at 80 K to 62cm-1 at 200 K for a typical sample. Above the maximum continuous-wave (CW) lasing temperature, the modal gain was observed to saturate before the device reached threshold. The reason for the gain saturation is the active area overheating in the CW mode. Some of the samples exhibited strong mode-grouping effects. These effects indicate the presence of ‘leaky modes’ in these structures and lead to a significant reduction of net gain at certain frequencies. - Author(s): V. Spagnolo ; G. Scamarcio ; D. Marano ; M. Troccoli ; F. Capasso ; C. Gmachl ; A.M. Sergent ; A.L. Hutchinson ; D.L. Sivco ; A.Y. Cho ; H. Page ; C. Becker ; C. Sirtori
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 298 –305
- DOI: 10.1049/ip-opt:20030610
- Type: Article
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The facet temperature profile and the thermal resistance of operating quantum-cascade lasers (QCLs) have been assessed using a microprobe band-to-band photoluminescence technique. Substrate-side and epilayer-side-mounted QCLs based on GaInAs/AlInAs/InP and GaAs/AlGaAs material systems have been compared. The dependence of the thermal resistance on the CW or pulsed injection conditions and its correlation with the output power have been studied. These results were used as inputs for a two-dimensional heat-diffusion model which gives the heat fluxes and the thermal conductivity of the active regions, in order to design QCLs with improved thermal properties. - Author(s): C. Charlton ; F. de Melas ; A. Inberg ; N. Croitoru ; B. Mizaikoff
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 306 –309
- DOI: 10.1049/ip-opt:20030673
- Type: Article
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The application of a room-temperature-operated distributed-feedback quantum cascade laser (DFB-QCL), coupled with a silica hollow waveguide for small-volume gas sensing is demonstrated. An internally silver-coated silica capillary, with a length of 4 m and an inner diameter of 700 µm simultaneously acts as waveguide and microcapillary gas cell. This configuration provides a well defined optical path length, while maintaining a small sample volume. Ethyl chloride gas was mixed with air and detected by attenuation of the emitted laser radiation at 971cm-1 down to concentration levels of 5 ppm (v/v). With the current experimental setup a limit of detection of 0.5 ppm (v/v) has been achieved. The feasibility study shows that hollow fibres provide facile light guiding for QCLs over several metres and, therefore can be used for remote gas sensing or IR light delivery in medical applications. - Author(s): A. Vicet ; D.A. Yarekha ; A. Ouvrard ; R. Teissier ; C. Alibert ; A.N. Baranov
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 310 –313
- DOI: 10.1049/ip-opt:20030674
- Type: Article
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A study of the effects of the injected current and the thermal resistance on the tunability of antimonide-based diode lasers is presented. The studied diode lasers, emitting at around 2.3 µm, are dedicated to gas detection in the atmosphere, based on tunable-diode-laser absorption spectroscopy (TDLAS). This very useful technique requires, from the lasers, an emitted tunable wavelength able to cross a gas absorption line to detect the absorbed light. Typically a tuning rate of a few GHz/mA is sufficient to perform gas detection at atmospheric pressure (Vicet et al., 2002). It is then important to know and understand the tuning properties of the devices to achieve gas detection. They are very sensitive to thermal effects which are involved in all tuning processes. The lasers studied are shown to be well adapted to gas detection, paradoxically because of their large thermal resistance Rth which increases Joule heating, and mainly affects their tunability. - Author(s): D.A. Wright ; V.V. Sherstnev ; A. Krier ; A.M. Monakhov ; G. Hill
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 314 –317
- DOI: 10.1049/ip-opt:20030786
- Type: Article
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Mid-infrared ring laser diodes based on InAs grown by LPE are described. The source is based on a symmetrical double heterostructure with large band offsets that operates in a whispering gallery mode. For low drive currents, the device exhibited superluminescence and very strong spectral tuning. At higher current, coherent emission has been observed from 380 µm diameter devices, at 3.017 µm at a temperature of 80 K. The temperature dependence of the electroluminescence emission spectra and the light–current characteristics were also measured. The lasers have a maximum operating temperature of 125 K with a peak output power of 5 mW. - Author(s): T.J. Rotter ; A. Stintz ; K.J. Malloy
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 318 –321
- DOI: 10.1049/ip-opt:20030842
- Type: Article
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Room temperature operation of a quantum dash-in-a-well (DWELL) laser based on InP at 2.03 µm wavelength has been achieved. An uncoated laser employing five DWELL layers in the active region shows threshold current densities between 540 and 950Acm-2. Slope efficiencies range from 3.5 to 6.8 %. The internal efficiency was estimated at 52 % and the internal losses at 55cm-1. This is the longest wavelength reported so far for quantum DWELL lasers. - Author(s): I. Vurgaftman ; W.W. Bewley ; C.L. Canedy ; J.R. Lindle ; C.S. Kim ; J.R. Meyer ; S.J. Spector ; D.M. Lennon ; G.W. Turner ; M.J. Manfra
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 322 –326
- DOI: 10.1049/ip-opt:20030536
- Type: Article
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Theoretical modelling indicates that photonic-crystal distributed-feedback (PCDFB) lasers should be capable of providing near-diffraction-limited, spectrally pure sources of midwave-infrared radiation. The authors have studied both 2nd-order and 1st-order optically pumped PCDFB lasers with ‘W’ active regions. Whereas it was not possible to optimise the 2nd-order grating due to the limitations of optical lithography, the 1st-order grating was fabricated using electron-beam lithography with a nearly optimum set of coupling coefficients. The resonant wavelength of the 1st-order grating remained somewhat longer than the gain peak at all temperatures up to the maximum for laser operation. In spite of the substantial detuning, the beam quality improved by a factor of five over angled-grating (α‐DFB) lasers fabricated from similar material, and was slightly better than that for the 2nd-order grating at stripe widths <175 µm. Although the devices were operated in the pulsed mode, a considerable narrowing of the multi-mode spectral linewidth was also realised. - Author(s): L. Song ; I. Vurgaftman ; S. Degroote ; W.W. Bewley ; C.-S. Kim ; G. Borghs ; J.R. Meyer ; P. Heremans
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 327 –331
- DOI: 10.1049/ip-opt:20030485
- Type: Article
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The authors report the design, MBE growth, processing and characterisation of mid-infrared type-II W lasers grown on InAs. Optical pumping by a 980 nm laser diode produced CW lasing to 78 K, where the emission wavelength was 3.52 µm. Pulsed operation was observed to 265 K with pumping by a Q-switched 2.1 µm Ho:YAG laser. The differential power conversion efficiency per facet for the 40-period structure was as high as 4.6% at T=30K in the CW mode. The threshold at low temperatures was extremely low, e.g. 20W/cm2 at T=20K. The characteristic temperature for CW lasing at 10K<T<78 K was 26 K, while for pulsed operation in the range T=78-200K it was 36 K. - Author(s): W. Heiss ; M. Böberl ; T. Schwarzl ; G. Springholz ; J. Fürst ; H. Pascher
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 332 –336
- DOI: 10.1049/ip-opt:20030790
- Type: Article
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Optically pumped lasers and light detectors based on microcavities with highly efficient Pb1 - x Eux Te/EuTe Bragg interference mirrors are described for the 3–6 µm wavelength range. The lasers operate up to and above room temperature with a minimum pump intensity threshold of about 15kW/cm2 The responses of the photodetectors show well pronounced cavity resonances. Furthermore, a microcavity is used to determine the absorption spectrum of a superlattice containing three-dimensionally ordered, self-organised PbSe quantum dots. The quantum dot absorption peak, with a width of only 9 meV, confirms the exceptionally high homogeneity of the quantum dot size distribution, observed so far only for these lead-salt quantum dots. - Author(s): K. Kellermann ; D. Zimin ; K. Alchalabi ; N.A. Pikhtin ; H. Zogg
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 337 –339
- DOI: 10.1049/ip-opt:20030785
- Type: Article
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Two types of infrared emitters realised with IV–VI (lead chalcogenide) narrow-gap semiconductor materials on Si substrates are described. First, edge-emitting PbSe quantum well lasers with Pb1-x Eux Se claddings are grown on a BaF2 buffer layer on Si(100) substrates, removed from the substrate by dissolving the buffer layer and cleaved into resonator structures. Lasing around 4–5 µm wavelength is observed up to 240 K when illuminating with about 5Wp from a 900 nm pump-laser-diode. Secondly, a resonant cavity PbSe/Pb1-x Eux Se structure on Si(111) with a one or two-pair BaF2/Pb1-y Euy Se bottom mirror and a three-pair BaF2/EuSe top mirror exhibiting emission at e.g. 4.1 µm and 4% line-width, operates at room temperature and is tunable by design. - Author(s): S.B. Mirov ; V.V. Fedorov ; K. Graham ; I.S. Moskalev ; I.T. Sorokina ; E. Sorokin ; V. Gapontsev ; D. Gapontsev ; V.V. Badikov ; V. Panyutin
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 340 –345
- DOI: 10.1049/ip-opt:20030612
- Type: Article
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Demonstrations of CW and pulsed microchip lasing in Cr2+:ZnS and Cr2+:ZnSe crystals are reported. Slope efficiencies up to 53% with output power up to 150 mW for CW and energy up to 1 mJ for pulsed pumping were achieved. Two compact diode and Er fibre laser directly pumped external cavity Cr2+:ZnS lasers are also described. - Author(s): N. Dogru and M.S. Ozyazici
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 346 –350
- DOI: 10.1049/ip-opt:20030784
- Type: Article
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The relative intensity noise (RIN) of a mode-locked hybrid soliton pulse source (HSPS) utilising a linearly chirped uniform fibre Bragg grating, is investigated, taking into account spontaneous noise, by using coupled-mode equations. It is shown that low noise does not affect the operation of device and therefore transform-limited pulses are generated over a wide tuning range around the fundamental frequency. However, for large values of linewidth enhancement factor, spontaneous coupling factor and gain saturation parameter, transform-limited pulses are not obtained over a wide tuning range because of increasing noise. Hence, the proper mode-locked range reduces. It is also shown that RIN reduction is possible by using linearly chirped uniform gratings as compared to unchirped gratings. - Author(s): D.G. Gevaux ; A.M. Green ; C.C. Phillips ; I. Vurgaftman ; W.W. Bewley ; C.L. Felix ; J.R. Meyer ; H. Lee ; R.U. Martinelli
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 351 –355
- DOI: 10.1049/ip-opt:20030789
- Type: Article
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Recent studies suggest that the radiative conversion efficiency of mid-infrared semiconductor devices is limited by non-radiative Auger mechanisms. Band structure engineering techniques, such as the introduction of strain or the use of type-II band offset materials, have been shown to reduce the effect of Auger recombination. Results from light emitting diodes (LEDs) with an active region consisting of ten InAs/GaInSb/InAs/AlGaAsSb type-II ‘W’ quantum wells grown by molecular beam epitaxy (MBE) on GaSb substrates are described. At room temperature, the device was characterised by a slope efficiency of 98 µW/A at low currents, which dropped at higher currents due to heating. This corresponded to an internal efficiency of approximately 2.6%. - Author(s): B.A. Matveev ; M. Aydaraliev ; N.V. Zotova ; S.A. Karandashov ; N.D. Il'inskaya ; M.A. Remennyi ; N.M. Stus' ; G.N. Talalakin
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 356 –359
- DOI: 10.1049/ip-opt:20030537
- Type: Article
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Light-emitting diodes operating in the 2.8–2.9 µm spectral region have been fabricated from InGaAs and InAsSbP p-n structures grown onto n- and heavily doped n+-InAs substrates. Owing to the high transparency of the n+-InAs and n-InGaAs buffer, the episide-down construction was successfully implemented for LEDs and photodiodes, and room temperature operation with output power and detectivity as high as 400 µW (I = 1A) and 1.5 × 1010cm Hz1/2/W} was correspondingly achieved. Operation of the LEDs and optically coupled LED-photodiode pairs was demonstrated in the 15–190°C temperature range. - Author(s): D. Gevaux ; A. Green ; C. Palmer ; P. Stavrinou ; C. Roberts ; C. Phillips
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 360 –364
- DOI: 10.1049/ip-opt:20030486
- Type: Article
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The potential for harnessing resonant-cavity (RC) effects in photonically structured mid-IR opto-electronic devices is explored experimentally and theoretically. Numerical modelling suggests that the effects of angular and spectral narrowing, combined with enhancements in external coupling efficiency, can lead to overall effective improvements in detectors and LEDs aimed at CH3 and CO2 gas sensing applications of up to ×22. Experimental progress towards realising these figures is presented. - Author(s): J.R. Lindle ; W.W. Bewley ; I. Vurgaftman ; J.R. Meyer ; J.B. Varesi ; S.M. Johnson
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 365 –370
- DOI: 10.1049/ip-opt:20030721
- Type: Article
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The negative luminescence (NL) of a midwave-infrared (MWIR) HgCdTe photodiode λco = 5.3 µm at 295 K) was investigated using both a modulated, self-referencing, optical technique and an electrical modulation technique. The internal negative luminescence efficiencies measured using optical modulation were 88% throughout the 3–5 µm spectral region, and nearly independent of temperature in the 240–300 K range. This corresponds to an apparent temperature reduction of 53 K at room temperature and 35 K at 240 K when a saturation reverse bias is applied. Efficiencies measured by the electrical modulation technique were consistent with the measured internal efficiencies and the measured reflectivity of the device. The reflectance and emission spectra measured with an FTIR spectrometer were modelled using empirical HgCdTe absorption formulas. The reverse saturation current density of 1.3 A/cm2 is lower than any reported previously in the literature for an NL device with cut-off wavelength beyond 4 µm. - Author(s): G.R. Nash ; N.T. Gordon ; T. Ashley ; M.T. Emeny ; T.M. Burke
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 371 –375
- DOI: 10.1049/ip-opt:20030467
- Type: Article
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Negative luminescent (NL) devices, which to an IR observer appear colder than they actually are, have a wide range of possible applications, including for use as IR sources in gas-sensing systems and as thermal radiation shields in IR cameras. Additionally, these devices can be used as calibration sources for very large IR focal plane arrays and have many potential advantages over conventional calibration sources, including high-speed operation (for multi-point correction) and low power consumption. For many of these applications a large area ∼1cm2 device which displays an, as large as possible, apparent temperature range is required. However, significant currents are required to reduce the carrier concentrations to the levels needed for maximum dynamic range. The authors have therefore used a novel micromachining technique to fabricate integrated optical concentrators in InSb/InAlSb and HgCdTe NL devices. Smaller area diodes can then be used to achieve the same absorption (e.g. for InSb an area reduction of 16 is possible) and the required currents are thus reduced. Recent results are presented from a large area ∼0.862 medium wavelength (MW) device incorporating integrated optical concentrators. The reverse saturation current of the device was measured to be ∼2.3 A/cm2, which is significantly smaller than the value of ∼9 A/cm2 reported previously for similar devices without optical concentrators. In addition, the large apparent temperature drop of the device ∼20K for a detector of cut-off 6.5µm when under reverse bias, coupled with its large size, mean that this device would be appropriate for use as a calibration source for IR imagers. - Author(s): K.T. Lai ; S.K. Haywood ; R. Gupta ; M. Missous
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 377 –380
- DOI: 10.1049/ip-opt:20030409
- Type: Article
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Intersubband absorption in the conduction band of a series of double barrier multiple quantum wells has been studied. Absorption in the forbidden polarisation was observed for a GaAs/Inx Ga(1-x) As/AlAs/Aly Ga(1 - y) As stepped well using 45° waveguide geometry. This is attributed to the relaxation of the polarisation selection rule. This corroborates the authors' previous observation of enhanced absorption at the Brewster angle in these structures. In 45° waveguide geometry, it is possible to resolve Γ(well)–X(AlAs) transitions in some samples. The observed energies of both Γ–Γand Γ–X transitions are in good agreement with the proposed theoretical model using an X-band effective mass of 0.4mo. - Author(s): J.M. Jancu ; P. Senellart ; E. Peter ; V. Berger ; F. Chevrier ; A. Joullié ; C. Alibert ; O. Krebs ; P. Voisin
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 381 –384
- DOI: 10.1049/ip-opt:20030722
- Type: Article
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The properties of intersubband transitions in L-valley GaAlSb-AlSb quantum wells are reinvestigated using the extended-basis sp3 d5 s* tight binding model. New functionalities for mid-infrared photodetection, associated with normal incidence and the use of asymmetric quantum wells, are also discussed. - Author(s): M.B.M. Rinzan ; S.G. Matsik ; D.G. Esaev ; A.G.U. Perera ; H.C. Liu ; M. Buchanan ; Z. Wasilevski
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 385 –389
- DOI: 10.1049/ip-opt:20030788
- Type: Article
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Heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors have already been demonstrated for use in the FIR range with cutoff wavelengths (λc) up to 85 µm. An interesting feature of these detectors is their strong response in the 8–20 µm range. Initial results are reported on HEIWIP detectors operating in the 8–20 µm range. The unoptimised detectors had a peak responsivity of 1.8 A/W at 15.2 µm at 4.2 K. HEIWIPs could be an alternative to already available detectors especially when optimised for higher temperatures. λc can be tailored by changing the Al concentration in the barrier. Responsivity of HEIWIPs can be selectively optimised by using the cavity mechanism and adjusting the Al fraction. It should also be possible to enhance the responsivity by changing the doping concentrations of the detectors. - Author(s): V.K. Malyutenko ; K.V. Michailovskaya ; O.Yu. Malyutenko ; V.V. Bogatyrenko ; D.R. Snyder
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 391 –394
- DOI: 10.1049/ip-opt:20030846
- Type: Article
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The pixelless dynamic scene projector successful in generating high-speed (microsecond range) broadband infrared (planckω<Eg, where ω is light frequency, planck is Planck's constant and Eg is the band gap value of the screen material) scenarios through shorter wavelength optical pumping planckω>Eg of a semiconductor screen was developed, fabricated, and tested. The device operation principle is based on a possibility of dynamically modulating the apparent temperature (or power emitted in the spectral range of free carrier absorption–emission processes) of an image optically generated on a semiconductor screen (light down-conversion process). The device successfully monitors both hot and cold images (compared to a scene temperature) as well as erase-image and display-hidden-image processes. The results of an experimental study of a germanium screen (300 K < T<500 K) in the 8–12 µm spectral range are reported for the first time. - Author(s): M.G. Mauk ; A.N. Tata ; J.A. Cox ; O.V. Sulima ; S. Datta
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 395 –398
- DOI: 10.1049/ip-opt:20030538
- Type: Article
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Thick (>100 µm) epitaxial layers of ternary and quaternary alloy III–V antimonides (e.g. InAsSb, InGaSb, AlGaAsSb, InGaAsSb and InAsSbP) can function as ‘virtual’ substrates for mid-infrared optoelectronics applications. Such alloy substrates have adjustable lattice constants and bandgaps, and are therefore of considerable interest for epitaxial growth of lattice-matched or strain-engineered epitaxial device structures, including mid-infrared detectors and light-emitting diodes. Liquid-phase epitaxy (LPE) methods can be readily adapted for the growth of such III–V antimonide virtual substrates due to the fast growth rates (1 to 10 µm/min) that are achievable with III–V antimonide LPE. The authors report on the development of InAsSb and InAsSbP virtual substrates consisting of two or three thick compositionally step-graded epitaxial layers grown by LPE on InAs substrates. Through this approach, ternary and quaternary alloy virtual substrates are obtained, with lattice constants and bandgaps significantly different from those currently available with binary compound substrates, including virtual substrates with optical absorption edges in the 4–5 µm wavelength range. - Author(s): M. Mashita ; T. Numata ; B.H. Koo ; H. Makino ; T. Yao
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 399 –402
- DOI: 10.1049/ip-opt:20030611
- Type: Article
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The authors report the first observation of photoluminescence (PL) from ultrathin InAs/GaAs single quantum wells (SQWs) grown on GaAs (111)A substrates by using molecular beam epitaxy. The surface morphologies of InAs layers grown on GaAs (001)-(2×4) and (111)A-(2×2) reconstructed surfaces are compared with reflection high energy electron diffraction and atomic force microscopy. The quantitative difference between (001) and (111)A surfaces is quite clear, i.e. the root mean square surface roughness is 50 nm on (001) surfaces and 0.83 nm on (111)A surfaces after ∼360 monolayers (MLs) growth of InAs. When the thickness of InAs wells in InAs/GaAs SQW samples increases from 1 to 6 ML, the PL peak energy at 10 K gradually decreases from 1.47 to 1.36 eV, the full width at half maximum becomes wider and the intensity abruptly decreases. It has been found that the PL intensity is closely related to the quality of the GaAs cap layer rather than the InAs wells alone. - Author(s): G. Hoffmann ; C. Schwender ; B. Vogelgesang ; H.J. Schimper ; J.O. Drumm ; N. Herhammer ; G.F. West ; H. Fouckhardt ; M. Scheib
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 403 –408
- DOI: 10.1049/ip-opt:20030484
- Type: Article
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The authors report on high-resolution X-ray diffraction studies of two antimonide-based mid-infrared W-laser samples. Both samples are of the same layer structure but with different mixed anion interface compositions in order to achieve lattice matching of the active region to the substrate in the second sample. A structural analysis, taking effects into account such as layer relaxation, layer tilting and asymmetrical strain enables an accurate determination of the average lattice constant of the active regions. The authors verify that the aim of lattice matching of the active region in the second sample is clearly achieved, and they also determine the strain values of the W-structure quantum-well layers and estimate the mixed anion interface stoichiometry. With a knowledge of the determined structural parameters, non-radiative recombination processes are investigated with time-resolved photoluminescence as well as laser properties under optically pumped laser operation. - Author(s): R. Magri and A. Zunger
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 409 –414
- DOI: 10.1049/ip-opt:20030843
- Type: Article
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The authors study the effects of interfacial atomic segregation on the electronic and optical properties of InAs/GaSb superlattices. They describe their atomistic empirical pseudopotential method and test its performance against the available experimental data. They show its ability to predict the band structure dependence on the detailed atomic configuration, and thus to properly account for the effects of interfacial atomic segregation and structural disorder. They also show how their method avoids the approximations underlying the pseudopotential method of Dente and Tilton, which gives different results. The application of the proposed method to the InAs/GaSb superlattices allows the explanation of some observed experimental results, such as: the bandgap difference between (InAs)8/(GaSb)8 superlattices with almost pure InSb-like or GaAs-like interfaces; the large blue shift of the bandgap when the growth temperature of the superlattice increases; and the blue shift of the bandgap of (InAs)8/(GaSb)n superlattices with increasing GaSb period n. They present a detailed comparison of their predicted blue shift with that obtained by other theories. - Author(s): W.L. Sarney and R.P. Leavitt
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 415 –419
- DOI: 10.1049/ip-opt:20030408
- Type: Article
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A series of InAs/Ga(As,Sb) superlattices were grown on InAs substrates by molecular beam epitaxy. The samples were grown in a manner that allowed the nature of the interfacial bonds (either GaAs or In(As,Sb)-like) to be controlled). In some of the samples the bond type-related strain was accommodated by adjusting the Sb mole fraction to nearly lattice match the superlattice to the substrate regardless of bond configuration. High-resolution X-ray diffraction measurements and transmission electron microscopy images reveal that samples grown with In(As,Sb)-like bonds on top of the InAs layers exhibit superior structural quality. Samples with GaAs-like bonds at both interfaces are far inferior to the others. - Author(s): D.W. Stokes ; R.L. Forrest ; J.H. Li ; S.C. Moss ; B.Z. Nosho ; B.R. Bennett ; L.J. Whitman ; M. Goldenberg
- Source: IEE Proceedings - Optoelectronics, Volume 150, Issue 4, p. 420 –423
- DOI: 10.1049/ip-opt:20030643
- Type: Article
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Lateral compositional modulation in a (InAs)C13 (GaSb)13 superlattice grown by molecular beam epitaxy for infrared detector applications has been investigated using high-resolution X-ray diffraction. X-ray diffraction reciprocal space maps exhibit distinct lateral satellite peaks about the vertical superlattice peaks; however, the pattern is tilted with respect to the (001) direction. This tilt is directly related to the stacking of the layers as revealed by cross-sectional scanning tunnelling microscopy (XSTM) images. XSTM shows the morphology of the structure to consist of InAs- and GaSb-rich regions with a modulation wavelength of ∼1200 Å and a lateral composition wavelength of 554± 3AA. The modulation only occurs along one in-plane direction, resulting in InAs ‘nanowires’ along the [11̄0] direction, which are several microns long. The possible causes of the lateral composition modulation and its impact on device performance are discussed.
Editorial: Mid-infrared optoelectronics materials and devices
Room-temperature operation of GaAs-based quantum cascade lasers processed as ridge and microcavity waveguides
Low-loss GaInAs-based waveguides for high-performance 5.5 µm InP-based quantum cascade lasers
Single-longitudinal-mode emission from interband cascade DFB laser with a grating fabricated by interferometric lithography
Experimental study of optical gain and loss in 3.4–3.6 µm interband cascade lasers
Thermal characteristics of quantum-cascade lasers by micro-probe optical spectroscopy
Hollow-waveguide gas sensing with room-temperature quantum cascade lasers
Tunability of antimonide-based semiconductor lasers diodes and experimental evaluation of the thermal resistance
Mid-infrared whispering gallery mode ring lasers and LEDs
InP based quantum dash lasers with 2 µm wavelength
Photonic-crystal distributed-feedback lasers for the midwave infrared
Optically pumped mid-infrared type-II W lasers on InAs substrates
Applications of lead-salt microcavities for mid-infrared devices
Optically pumped lead-chalcogenide IR-emitters
Diode and fibre pumped Cr2+:ZnS mid-infrared external cavity and microchip lasers
RIN in mode-locked external cavity semiconductor lasers
3.3 µm W quantum well light emitting diode
Flip-chip bonded InAsSbP and InGaAs LEDs and detectors for the 3-µm spectral region
Resonant-cavity light-emitting diodes (RC-LEDs) and detectors for mid-IR gas-sensing applications
Negative luminescence from MWIR HgCdTe/Si devices
Large-area IR negative luminescent devices
Observation of intersubband absorption in the forbidden polarisation for a stepped double barrier quantum well
Normal-incidence intersubband absorption in AlGaSb quantum wells: enhanced oscillator strength and new functionalities using asymmetry
Heterojunction interfacial workfunction internal photoemission detectors for use at 8–20 µm
Infrared dynamic scene simulating device based on light down-conversion
Ternary and quaternary alloy III–V antimonide (InAsSb and InAsSbP) virtual substrates made by liquid-phase epitaxy
Ultrathin InAs/GaAs single quantum wells grown on GaAs (111)A substrates by molecular beam epitaxy
X-ray study of interface stoichiometry and electronic properties of optically pumped antimonide-based mid-infrared W-laser structures
Theory of optical properties of segregated InAs/GaSb superlattices
Strain and interfacial bond type effects on structural quality of InAs/Ga(As,Sb) superlattices grown on InAs substrates
X-ray diffraction analysis of lateral composition modulation in InAs/GaSb superlattices intended for infrared detector applications
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